US4622095A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Laser stimulated halogen gas etching of metal substrates
Assignee: International Business Machines Corp
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Filing: 1985-10-18
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Granted: 1986-11-11
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Expires: 2005-10-18
Abstract
Abstract A method of radiation induced dry etching of a metallized (e.g. copper) substrate is disclosed wherein the substrate is pattern-wise exposed to a beam of laser radiation in a halogen gas atmosphere which is reactive with the substrate to form a metal halide salt reaction product to accelerate the formation of the metal halide salt without its substantial removal from the substrate. The metal halide salt is removed from the substrate by contact of the substrate with a solvent for the metal halide salt.
Inventors
- 👤 Warren D. Grobman
- 👤 Fahfu Ho
- 👤 Jerry E. Hurst, Jr.
- 👤 John J. Ritsko
- 👤 Yaffa Tomkiewicz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 15:35
CPC Classifications
C; C23; C23F; C23F4/00; C23F4/02
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
118 words
A method of radiation induced dry etching of a metallized substrate comprising the steps of (a) mounting the substrate in a reaction chamber, (b) introducing into the chamber a halogen gas which is reactive with the substrate to form a metal halide salt reaction product, (c) projecting a patterned beam of laser radiation onto the substrate at a wave-length suitable for absorption by the metal halide to accelerate the reaction between the halogen gas and the substrate in the patterned areas without substantial removal of the reaction product which forms therein, and then (d) removing the metal halide reaction product from the substrate by contact of the substrate with a solvent for the metal halide salt reaction product.
Claim 2
Independent Claim
118 words
A method of radiation induced dry etching of a metallized substrate comprising the steps of (a) mounting the substrate in a reaction chamber, (b) introducing into the chamber a halogen gas which is reactive with the substrate to form a metal halide salt reaction product, (c) projecting a patterned beam of laser radiation onto the substrate at a wave-length suitable for absorption by the metal halide to accelerate the reaction between the halogen gas and the substrate in the patterned areas without substantial removal of the reaction product which forms therein, and then (d) removing the metal halide reaction product from the substrate by contact of the substrate with a solvent for the metal halide salt reaction product.
Claim 3
Dependent Claim
11 words
The method of claim 1 wherein the halogen gas is chlorine.
Claim 4
Dependent Claim
11 words
The method of claim 1 wherein the halogen gas is bromine.
Claim 5
Dependent Claim
15 words
The method of claim 1 wherein the laser is a beam of pulsed excimer radiation.
Claim 6
Dependent Claim
20 words
The method of claim 4 wherein the excimer laser is operated at an ultraviolet wavelength of less than 380 nanometers.
Claim 7
Dependent Claim
17 words
The method of claim 5 wherein the excimer laser is an XeCl laser operated at 308 nanometers.
Claim 8
Dependent Claim
21 words
The method of claim 1 wherein the halogen gas is pressurized in the range of about 0.1 to about 10 torr.
Claim 9
Dependent Claim
21 words
The method of claim 1 wherein the substrate is heated to a temperature between about 35° C. and about 140° C.
Claim 10
Dependent Claim
31 words
The method of claim 1 wherein the substrate is heated in air between about 100° C. to about 150° C. to passivate the metallized substrate before exposure to the halogen gas.
Claim 11
Independent Claim
23 words
A method of radiation induced dry etching of a metallized substrate comprising the steps of (a) mounting the substrate in a reaction chamber,
Claim 12
Independent Claim
23 words
A method of radiation induced dry etching of a metallized substrate comprising the steps of (a) mounting the substrate in a reaction chamber,
Claim 13
Dependent Claim
52 words
(b) introducing, under high pressure, into the chamber a halogen gas which is reactive with the substrate, said substrate being heated, to form a metal halide salt reaction product, and (c) projecting a patterned beam of laser radiation onto the substrate to substantially completely remove the metal halide in the patterned areas.
Claim 14
Dependent Claim
52 words
(b) introducing, under high pressure, into the chamber a halogen gas which is reactive with the substrate, said substrate being heated, to form a metal halide salt reaction product, and (c) projecting a patterned beam of laser radiation onto the substrate to substantially completely remove the metal halide in the patterned areas.
Claim 15
Dependent Claim
11 words
The method of claim 10 wherein the halogen gas is bromine.
Claim 16
Dependent Claim
21 words
The method of claim 10 wherein the halogen gas is pressurized in the range of about 0.1 to about 10 torr.
Claim 17
Dependent Claim
21 words
The method of claim 10 wherein the substrate is heated to a temperature between about 35° C. and about 140° C.
Claim 18
Dependent Claim
31 words
The method of claim 10 wherein the substrate is heated in air between about 100° C. to about 150° C. to passivate the metallized substrate before exposure to the halogen gas.
References Cited (Backward Citations)
US3364087A
Cited
US4260649A
Cited
US4335295A
Cited
US4331504A
Cited
US4398993A
Cited
US4478677A
Cited
US4490211A
Cited
US4490210A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-11-10 | 1990-05-12 | 1990-11-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-11-10 | 1994-05-12 | 1994-11-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-11-10 | 1998-05-12 | 1998-11-11 | $7700.00 | Window Closed / Lapsed |