US4628588A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Molybdenum-metal mask for definition and etch of oxide-encapsulated metal gate
Assignee: Texas Instruments Inc
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Filing: 1984-06-25
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Granted: 1986-12-16
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Expires: 2004-06-25
Abstract
Abstract A molybdenum mask is used instead of a photoresist mask in defining and etching an oxide-encapsulated molybdenum gate in a VLSI manufacturing method. The molybdenum mask is first defined by a photoresist mask, then the photoresist is removed, leaving the molybdenum mask. A long over etch can then be tolerated so that oxide filaments can be avoided; this would be otherwise unreliable due to damage to photoresist during the over etch.
Inventors
- 👤 James M. McDavid
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 11:19
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01316; H10P76/00; H10P76/40; Y; Y10; Y10S; Y10S148/00; Y10S148/105; Y10S148/106; Y10S438/00; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
194 words
A method of making a semiconductor device comprising the steps of: applying a layer of refractory metal to a face of a semiconductor body, said face of the semiconductor body having two relatively flat surfaces with a substantially vertical step between the flat surfaces, said layer of refractory metal extending along said face from one flat surface to the other by said step, "applying a layer of insulator over said layer of refractory metal," applying a thin coating of molybdenum over said layer of insulator, said coating being resistant to an etchant which etches said insulator, applying a layer of photoresist over said molybdenum coating, exposing to light and developing the photoresist, to leave an area of said photoresist spaced from said step or to leave a line of said photoresist crossing said step, etching away said molybdenum coating using said area of photoresist as a mask, then removing said area of photoresist to leave an area of said molybdenum coating, then etching said insulator using said area of molybdenum coating as a mask, to remove the uncovered insulator coating including filament areas at said step, and thereafter etching said layer of refractory metal.
Claim 2
Independent Claim
194 words
A method of making a semiconductor device comprising the steps of: applying a layer of refractory metal to a face of a semiconductor body, said face of the semiconductor body having two relatively flat surfaces with a substantially vertical step between the flat surfaces, said layer of refractory metal extending along said face from one flat surface to the other by said step, "applying a layer of insulator over said layer of refractory metal," applying a thin coating of molybdenum over said layer of insulator, said coating being resistant to an etchant which etches said insulator, applying a layer of photoresist over said molybdenum coating, exposing to light and developing the photoresist, to leave an area of said photoresist spaced from said step or to leave a line of said photoresist crossing said step, etching away said molybdenum coating using said area of photoresist as a mask, then removing said area of photoresist to leave an area of said molybdenum coating, then etching said insulator using said area of molybdenum coating as a mask, to remove the uncovered insulator coating including filament areas at said step, and thereafter etching said layer of refractory metal.
Claim 3
Dependent Claim
12 words
A method according to claim 1 wherein said refractory metal is molybdenum.
Claim 4
Dependent Claim
14 words
A method according to claim 1 wherein said layer of insulator is silicon oxide.
Claim 5
Dependent Claim
20 words
A method according to claim 1 wherein said refractory metal is molybdenum, and said layer of insulator is silicon oxide.
Claim 6
Dependent Claim
167 words
In a method of making an MOS transistor device, the steps of: applying a layer of conductive material to a face of a semiconductor body, said face of the semiconductor body having a substantially vertical step between two relatively flat surfaces, said layer extending across a step, applying a layer of insulator over said layer of conductive material, applying a thin molybdenum coating over said layer of insulator, said molybdenum coating being resistant to an etchant which etches said insulator, applying a layer of photoresist over said molybdenum coating, exposing to light and developing the photoresist, to leave an area of said photoresist spaced from said step, etching away said molybdenum coating using said area of photoresist as a mask, then removing said area of photoresist to leave an area of said molybdenum coating, then etching said insulator using said area of molybdenum coating as a mask, to remove the uncovered insulator coating including filament areas at said step, and thereafter etching said layer of conductive material.
Claim 7
Dependent Claim
167 words
In a method of making an MOS transistor device, the steps of: applying a layer of conductive material to a face of a semiconductor body, said face of the semiconductor body having a substantially vertical step between two relatively flat surfaces, said layer extending across a step, applying a layer of insulator over said layer of conductive material, applying a thin molybdenum coating over said layer of insulator, said molybdenum coating being resistant to an etchant which etches said insulator, applying a layer of photoresist over said molybdenum coating, exposing to light and developing the photoresist, to leave an area of said photoresist spaced from said step, etching away said molybdenum coating using said area of photoresist as a mask, then removing said area of photoresist to leave an area of said molybdenum coating, then etching said insulator using said area of molybdenum coating as a mask, to remove the uncovered insulator coating including filament areas at said step, and thereafter etching said layer of conductive material.
Claim 8
Dependent Claim
14 words
A method according to claim 5 wherein said conductive material is a refractory metal.
Claim 9
Dependent Claim
14 words
A method according to claim 5 wherein said layer of insulator is silicon oxide.
Claim 10
Dependent Claim
20 words
A method according to claim 6 wherein said conductive material is molybdenum, and said layer of insulator is silicon oxide.
References Cited (Backward Citations)
US3698078A
Cited
US4453306A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-12-15 | 1990-06-16 | 1990-12-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-12-15 | 1994-06-16 | 1994-12-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-12-15 | 1998-06-16 | 1998-12-16 | $7700.00 | Window Closed / Lapsed |