US4635344A
Expired / Lapsed
US
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Method of low encroachment oxide isolation of a semiconductor device
Assignee: Texas Instruments Inc
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Filing: 1984-08-20
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Granted: 1987-01-13
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Expires: 2004-08-20
Abstract
Abstract A low temperature, low encroachment isolation technique using differential oxidation results in an isolated semiconductor body having an N+ substrate (12) and an N epi layer (14) forming a mesa. N+ implants (22a) and (22b) are implanted on opposite sides of the mesa. Oxide is grown over the surface of the device with differential oxidation thus resulting in thick regions (24) over the N+ dopant regions and a thin region (26) over the undopant mesa region.
Inventors
- 👤 Robert H. Havemann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 10:04
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P14/65; H10P14/6502; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0125; H10W10/10; H10W10/13
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
150 words
A method of isolating a semiconductor device comprising the steps of: (a) providing a semiconductor body of a first conductivity type, (b) forming a raised structure having a side wall on said semiconductor body of said first conductivity type, (c) forming a first layer of oxide over the top and sides of said raised structure, said semiconductor body being exposed adjacent the sides of said raised structure, (d) forming highly doped areas of said first conductivity type in the exposed regions of said semiconductor body extending to said raised structure, and (e) forming a second layer of oxide over said raised structure and over said doped areas at a temperature such that the rate of oxidation over said doped areas greatly exceeds the rate of oxidation over said raised structure in order to form a thick recessed field oxide adjacent said raised structure without encroachment into the active device region.
Claim 2
Independent Claim
150 words
A method of isolating a semiconductor device comprising the steps of: (a) providing a semiconductor body of a first conductivity type, (b) forming a raised structure having a side wall on said semiconductor body of said first conductivity type, (c) forming a first layer of oxide over the top and sides of said raised structure, said semiconductor body being exposed adjacent the sides of said raised structure, (d) forming highly doped areas of said first conductivity type in the exposed regions of said semiconductor body extending to said raised structure, and (e) forming a second layer of oxide over said raised structure and over said doped areas at a temperature such that the rate of oxidation over said doped areas greatly exceeds the rate of oxidation over said raised structure in order to form a thick recessed field oxide adjacent said raised structure without encroachment into the active device region.
Claim 3
Dependent Claim
34 words
The method of claim 1 wherein the thickness of said second layer of oxide is at least ten times as thick adjacent said raised structure as on the upper portion of said raised structure.
Claim 4
Dependent Claim
20 words
The method of claim 2 wherein said second layer of oxide is formed at a temperature of about 800° C.
Claim 5
Dependent Claim
20 words
The method of claim 1 wherein said first layer of oxide is patterned over said raised structure by anisotropic etching.
Claim 6
Dependent Claim
24 words
The method of claim 1 wherein said first type conductivity comprises N type and said highly doped areas are formed from N+ type material.
Claim 7
Dependent Claim
20 words
The method of claim 5 wherein said second layer of oxide is formed at a temperature of about 800° C.
Claim 8
Dependent Claim
31 words
The method of claim 1 further including the step of removing said first layer of oxide from said raised structure prior to forming said second layer of oxide in step (e).
Claim 9
Dependent Claim
21 words
The method of claim 7 wherein said second layer of oxide is formed at low temperatures less than about 850° C.
Claim 10
Dependent Claim
20 words
The method of claim 7 wherein said second layer of oxide is formed at a temperature of about 800° C.
Claim 11
Dependent Claim
20 words
The method of claim 7 wherein said first layer of oxide is patterned over said raised structures by anisotropic etching.
Claim 12
Dependent Claim
24 words
The method of claim 7 wherein said first type conductivity comprises N type and said highly doped areas are formed from N+ type material.
References Cited (Backward Citations)
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