Method of fabricating titanium silicide gate electrodes and interconnections

Claim 2

An improved method of forming metal silicide electrode and interconnection structures on an integrated circuit substrate having a patterned polysilicon layer superposing said substrate and circuit components, characterized by the steps of: depositing a film of titanium having a thickness in the approximate range of 500 to 1500 Angstroms; rapidly raising the temperature of said substrate to within the approximate range of 500 to 800 degrees centigrade; maintaining said temperature for only a period of time sufficient for said titanium to react with only said polysilicon, said period of time being within the approximate range of one second to 30 seconds such that said metal and said polysilicon react to form a silicide layer.

Claim 3

In a method of forming a semiconductor integrated circuit device having a silicon substrate, an improved method of forming transistor structures having metal silicide gate electrodes and metal silicide interconnections on said semiconductor integrated circuit silicon substrate characterized by the steps of: forming a first insulator layer over said silicon substrate; forming at least one polysilicon gate on said first layer; doping regions of said substrate on each side of said gate such that said dopant forms source, drain and channel regions with respect to said gate to create a transistor structure; thickening said first insulating layer not covered by said gate to a thickness so as to surround said gate; depositing a film of titanium having a thickness in the approximate range of 500 to 1500 Angstroms; rapidly raising the temperature of said substrate to within the approximate range of 500 to 800 degrees centigrade; maintaining said temperature for only a period of time to allow said titanium and only said polysilicon to react so as to form a titanium silicide gate electrode superposing said channel region said period of time being within the approximate range of one second to 30 seconds; and stripping said titanium layer from said first insulator layer.

Claim 4

In a method of forming a semiconductor integrated circuit device having a silicon substrate, an improved method of forming transistor structures having metal silicide gate electrodes and metal silicide interconnections on said semiconductor integrated circuit silicon substrate characterized by the steps of: forming a first insulator layer over said silicon substrate; forming at least one polysilicon gate on said first layer; doping regions of said substrate on each side of said gate such that said dopant forms source, drain and channel regions with respect to said gate to create a transistor structure; thickening said first insulating layer not covered by said gate to a thickness so as to surround said gate; depositing a film of titanium having a thickness in the approximate range of 500 to 1500 Angstroms; rapidly raising the temperature of said substrate to within the approximate range of 500 to 800 degrees centigrade; maintaining said temperature for only a period of time to allow said titanium and only said polysilicon to react so as to form a titanium silicide gate electrode superposing said channel region said period of time being within the approximate range of one second to 30 seconds; and stripping said titanium layer from said first insulator layer.

Claim 5

The method as set forth in claim 2, further comprising: forming a plurality of said transistor structure.

Claim 6

The method as set forth in claim 3, further comprising: forming a pattern of polysilicon interconnections between said transistors prior to said step of thickening said insulator layer such that said layer also surrounds said interconnections.

Claim 7

The method according to claim 4, wherein said substrate has active integrated circuit components integral therewith, further comprising: patterning said interconnections such that said transistors are connected to at least some of said components.