US4642162A
Expired / Lapsed
US
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Planarization of dielectric layers in integrated circuits
Assignee: Atmel Corp
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Filing: 1986-01-02
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Granted: 1987-02-10
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Expires: 2006-01-02
Abstract
Abstract A method is disclosed for the planarization of a semiconductor device structure by a two stage planarization process which comprises: applying a dielectric layer over a first conductive layer, spin coating an organic layer onto the first dielectric layer, etching the device in a plasma etching process to substantially remove the organic planarization layer, then etching the device in a plasma etching process which etches the exposed dielectric layer to substantially remove all of it, removing the remaining organic planarization layer, followed by the application of a second dielectric layer under bias sputter deposition conditions. The bias sputter deposition fills trenches and eliminates peaks in the remaining first dielectric layer as it builds up the second dielectric layer. The process planarizes the dielectric layer without thickness variations dependent upon conductor layer pattern density.
Inventors
- 👤 David J. Brownell
- 👤 Daniel C. Christensen
- 👤 David G. Erie
- 👤 Daniel Youngner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 23:39
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092; H10P; H10P95/00; H10P95/06; H10P95/062; H10P95/064
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
135 words
A method for the planarization of a semiconductor device comprising: (a) defining on the device a first conductive layer having a preselected interconnect pattern; (b) applying a first dielectric layer over the first conductive layer, the first layer having an irregular profile corresponding to the first conductive layer; (c) applying a planarization layer over the first dielectric layer, the planarization layer having a smooth profile relative to that of the first dielectric layer; (d) etching the planarization layer to substantially remove the planarization layer and expose raised portions of the first dielectric layer, some portion of the planarization layer remaining; (e) etching the first dielectric layer to subtantially remove the first dielectric layer over the first conductive layer; (f) removing the remaining planarization layer; and (g) applying a second dielectric layer by bias sputter deposition.
Claim 2
Independent Claim
135 words
A method for the planarization of a semiconductor device comprising: (a) defining on the device a first conductive layer having a preselected interconnect pattern; (b) applying a first dielectric layer over the first conductive layer, the first layer having an irregular profile corresponding to the first conductive layer; (c) applying a planarization layer over the first dielectric layer, the planarization layer having a smooth profile relative to that of the first dielectric layer; (d) etching the planarization layer to substantially remove the planarization layer and expose raised portions of the first dielectric layer, some portion of the planarization layer remaining; (e) etching the first dielectric layer to subtantially remove the first dielectric layer over the first conductive layer; (f) removing the remaining planarization layer; and (g) applying a second dielectric layer by bias sputter deposition.
Claim 3
Dependent Claim
13 words
The method of claim 1 wherein the planarization layer is an organic material.
Claim 4
Dependent Claim
11 words
The method of claim 2 wherein the planarization layer is photoresist.
Claim 5
Dependent Claim
16 words
The method of claim 1 wherein the first dielectric layer is silicon dioxide or phosphoroussilicon dioxide.
Claim 6
Dependent Claim
15 words
The method of claim 1 wherein the conductive layer is aluminum, aluminum-copper, aluminum-silicon, or aluminum-copper-silicon.
Claim 7
Dependent Claim
17 words
The method of claim 1 wherein the conductive layer is tungsten, polysilicon, or a refractory metal silicide.
Claim 8
Dependent Claim
15 words
The method of claim 1 wherein the planarization layer is plasma etched in step (d).
Claim 9
Dependent Claim
15 words
The method of claim 1 wherein the dielectric layer is plasma etched in step (e).
Claim 10
Dependent Claim
14 words
The method of claim 7 wherein the plasma etching is anisotropic reactive ion etching.
Claim 11
Dependent Claim
14 words
The method of claim 8 wherein the plasma etching is anisotropic reactive ion etching.
Claim 12
Dependent Claim
26 words
The method of claim 1 wherein the second dielectric layer is deposited first by low voltage bias sputter deposition followed by high voltage bias sputter deposition.
Claim 13
Dependent Claim
13 words
The method of claim 11 wherein the second dielectric layer is silicon dioxide.
Claim 14
Independent Claim
139 words
A method for the planarization of dielectric layers in an integrated circuit comprising: (a) defining on the circuit a first conductive layer having a preselected interconnect pattern; (b) applying a first dielectric layer over the first conductive layer, the first dielectric layer having an irregular profile corresponding to the first conductive layer; (c) applying a planarization layer over the first dielectric layer, the planarization layer having a smooth profile relative to that of the first dielectric layer; (d) etching the planarization layer to substantially remove the planarization layer and expose raised portions of the first dielectric layer, some portion of the planarization layer remaining; (e) etching the first dielectric layer to substantially remove the first dielectric layer over the first conductive layer; (f) removing the remaining planarization layer; and (g) applying a second dielectric layer by bias sputter deposition.
Claim 15
Independent Claim
139 words
A method for the planarization of dielectric layers in an integrated circuit comprising: (a) defining on the circuit a first conductive layer having a preselected interconnect pattern; (b) applying a first dielectric layer over the first conductive layer, the first dielectric layer having an irregular profile corresponding to the first conductive layer; (c) applying a planarization layer over the first dielectric layer, the planarization layer having a smooth profile relative to that of the first dielectric layer; (d) etching the planarization layer to substantially remove the planarization layer and expose raised portions of the first dielectric layer, some portion of the planarization layer remaining; (e) etching the first dielectric layer to substantially remove the first dielectric layer over the first conductive layer; (f) removing the remaining planarization layer; and (g) applying a second dielectric layer by bias sputter deposition.
Claim 16
Dependent Claim
13 words
The method of claim 13 wherein the planarization layer is an organic material.
Claim 17
Dependent Claim
11 words
The method of claim 14 wherein the planarization layer is photoresist.
Claim 18
Dependent Claim
15 words
The method of claim 13 wherein the first dielectric is silicon dioxide or phosphorous-silicon dioxide.
Claim 19
Dependent Claim
15 words
The method of claim 13 wherein the conductive layer is aluminum, aluminum-copper, aluminum-silicon, or aluminum-copper-silicon.
Claim 20
Dependent Claim
17 words
The method of claim 13 wherein the conductive layer is tungsten, polysilicon, or a refractory metal silicide.
Claim 21
Dependent Claim
15 words
The method of claim 13 wherein the planarization layer is plasma etched in step (d).
Claim 22
Dependent Claim
15 words
The method of claim 13 wherein the dielectric layer is plasma etched in step (e).
Claim 23
Dependent Claim
14 words
The method of claim 19 wherein the plasma etching is anisotropic reactive ion etching.
Claim 24
Dependent Claim
14 words
The method of claim 20 wherein the plasma etching is anisotropic reactive ion etching.
Claim 25
Dependent Claim
26 words
The method of claim 13 wherein the second dielectric layer is deposited first by low voltage bias sputter deposition followed by high voltage bias sputter deposition.
Claim 26
Dependent Claim
13 words
The method of claim 13 wherein the second dielectric layer is silicon dioxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-02-09 | 1990-08-11 | 1991-02-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-02-09 | 1994-08-11 | 1995-02-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-02-09 | 1998-08-11 | 1999-02-10 | $7700.00 | Window Closed / Lapsed |