Plural-bit-per-cell read-only memory

Claim 1

A plural-bit-per-cell read-only memory having a memory cell array comprising a plurality of plural-bit read-only memory cells and reference cell arrays for producing reference voltages used for reading data stored in said plural-bit memory cells, said memory cell array comprising a plurality of parallel word lines, a pattern of diffusion layers formed on a substrate and extending in parallel with said word lines, a predetermined number of parallel bit lines crossing said diffusion layers per predetermined length of said diffusion layers, a plurality of plural-bit memory cells comprising a single transistor formed at the intersections of said bit lines and said word lines, and low resistance ground lines crossing said diffusion layers in parallel with said bit lines, one said low resistance ground line being arranged per said predetermined length of said diffusion layers, said predetermined length of said diffusion layers being used as a common grounding route to said ground line, said word lines forming the gates of said plural-bit memory cells, said bit lines and said word lines being used for the selection of an addressed cell from said plurality of plural-bit memory cells, and said reference cell array comprising a plurality of reference transistor cells, the arrangement of said reference cells in said reference cell array having positions corresponding to the arrangement of corresponding plural-bit memory cells within said predetermined length of said diffusion layers in said memory cell array, the transconductance of said reference cells being predetermined in correspondence with reference voltage values, a column address signal which selects a plural-bit memory cell also selecting a reference cell the position of which in its array corresponds to the position of said plural-bit memory cell in said memory cell array selected by said column address signal, whereby the generation of a reference voltage is carried out in which the voltage value of the selected reference cell reference voltage varies in the same manner as variations in voltage of the selected plural-bit memory cell, taking into consideration variation of resistance of said diffusion layers according to the location of said plural-bit memory cell selected by said column address signal.