US4664938A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for deposition of silicon
Assignee: Phillips Petroleum Co
•
Filing: 1985-05-06
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Granted: 1987-05-12
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Expires: 2005-05-06
Abstract
Abstract An apparatus and method are provided for depositing silicon on a substrate in a deposition chamber wherein deposition of impurities can be effectively prevented. Impurities are ionized according to the invention to form impurity ions which are collected so as to prevent their deposition on the substrate.
Inventors
- 👤 Starnes E. Walker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:48
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/4401; C23C16/4402; C23C16/22; C23C16/24
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
77 words
In a method of depositing silicon of the type wherein gaseous silane is decomposed in a chamber to the decomposition products silicon and SiH which are deposited on a substrate, wherein said chamber contains impurities other than the silane compound and decomposition products, the improvement comprising: ionizing at least one of said impurities in said chamber to form impurity ions; collecting said impurity ions so as to prevent said impurity ions from being deposited on the substrate.
Claim 2
Dependent Claim
77 words
In a method of depositing silicon of the type wherein gaseous silane is decomposed in a chamber to the decomposition products silicon and SiH which are deposited on a substrate, wherein said chamber contains impurities other than the silane compound and decomposition products, the improvement comprising: ionizing at least one of said impurities in said chamber to form impurity ions; collecting said impurity ions so as to prevent said impurity ions from being deposited on the substrate.
Claim 3
Dependent Claim
34 words
A method as recited in claim 1, wherein said ionizing step comprises passing a beam of electromagnetic radiation into said chamber, the radiation being of a wavelength which photoionizes said at least one impurity.
Claim 4
Dependent Claim
27 words
A method as recited in claim 2, wherein said impurity ions are collected by electrodes in said chamber, said electrodes having a DC electrical voltage applied thereto.
Claim 5
Dependent Claim
24 words
A method as recited in claim 3, wherein said radiation has a wavelength in the range of about 110 nm to about 180 nm.
Claim 6
Dependent Claim
31 words
A method as recited in claim 4, wherein said deposition method is of the glow discharge type which includes applying an alternating current to third and fourth electrodes within said chamber.
Claim 7
Dependent Claim
23 words
A method as recited in claim 7, wherein said collecting step comprises generating an electric field for attracting impurity ions to an electrode.
References Cited (Backward Citations)
US2897126A
Cited
US3536522A
Cited
US3668382A
Cited
US4317844A
Cited
US4059461A
Cited
US4085332A
Cited
US4146449A
Cited
US4260649A
Cited
US4256404A
Cited
US4466992A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-05-11 | 1990-11-10 | 1991-05-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-05-11 | 1994-11-10 | 1995-05-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-05-11 | 1998-11-10 | 1999-05-12 | $7700.00 | Window Closed / Lapsed |