US4676841A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication of dielectrically isolated devices utilizing buried oxygen implant and subsequent heat treatment at temperatures above 1300° C.
Assignee: Nokia Bell Labs
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Filing: 1985-09-27
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Granted: 1987-06-30
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Expires: 2005-09-27
Abstract
Abstract Dielectrically isolated devices are produced by a series of steps including the implantation of a silicon substrate to produce a precursor to the silicon oxide region and subsequently heat treating this region. In contrast to previous techniques, the extent of such heating is substantially increased to remove a non-oxidic intermediary region typically remaining.
Inventors
- 👤 George K. Celler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:06
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/208; H10P30/209; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1908; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S148/00; Y10S148/082; Y10S148/083
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
125 words
A process for fabricating a dielectrically isolated device comprising the steps of (1) implanting oxygen into a substrate comprising silicon to form an oxygen-containing region that is separated from the surface of said substrate by a region of silicon, (2) heat treating said implanted substrate to form a silicon dioxide region, and (3) completing said device in said region of silicon wherein said heat treatment is performed at a temperature of at least 1300 degrees C. for a time period sufficient to ensure that said silicon region is single crystalline and single phase, that said silicon dioxide region is single phase, and that there is essentially a complete absence of any region between said single crystalline silicon region and said silicon phase silicon dioxide region.
Claim 2
Dependent Claim
125 words
A process for fabricating a dielectrically isolated device comprising the steps of (1) implanting oxygen into a substrate comprising silicon to form an oxygen-containing region that is separated from the surface of said substrate by a region of silicon, (2) heat treating said implanted substrate to form a silicon dioxide region, and (3) completing said device in said region of silicon wherein said heat treatment is performed at a temperature of at least 1300 degrees C. for a time period sufficient to ensure that said silicon region is single crystalline and single phase, that said silicon dioxide region is single phase, and that there is essentially a complete absence of any region between said single crystalline silicon region and said silicon phase silicon dioxide region.
Claim 3
Dependent Claim
14 words
The process of claim 1 wherein said temperature is at least 1350 degrees C.
Claim 4
Dependent Claim
14 words
The process of claim 1 wherein said temperature is at least 1400 degrees C.
Claim 5
Dependent Claim
19 words
The process of claim 3 wherein said heat treatment time is in the range 10 minutes to 2 hours.
Claim 6
Dependent Claim
14 words
The process of claim 3 wherein said heat treatment is accomplished with electromagnetic radiation.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-06-29 | 1990-12-29 | 1991-06-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-06-29 | 1994-12-29 | 1995-06-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-06-29 | 1998-12-29 | 1999-06-30 | $7700.00 | Window Closed / Lapsed |