Magnetostatic-wave device

Claim 2

A magnetostatic-wave device for propogating at least one microwave signal between input and output terminals, said device comprising: a ferrimagnetic material through which said microwave signal travels from an input end to an output end; means for applying a magnetic field to said ferrimagnetic material between said input and said output ends; an output transducer located at said output end of said ferrimagnetic material, said output transducer transferring said microwave signal in said ferrimagnetic material to said output terminal; an input conductive layer located at said input end of said ferrimagnetic material, said conductive layer having a plurality of separate finger structures extending across said ferrimagnetic material in a direction perpendicular to the direction of travel of said microwave signal; and an active transistor controlled exciting means for separately controlling the amplitude and phase of the input microwave signal applied to each separate finger of said separate finger structures extending across said ferrimagnetic material.

Claim 3

The magnetostatic-wave device of claim 1 wherein said active transistor controlled exciting means includes separate three-contact field effect transistors each having one of their three contacts connected to each of said separate fingers of said separate finger structures of said input conductive layer.

Claim 4

The magnetostatic-wave device of claim 2 wherein said separate field effect transistors are integrated onto a common semiconductor chip.

Claim 5

The magnetostatic-wave device of claim 3 wherein said gate contacts of all of said field effect transistors are connected to said microwave input signal.

Claim 6

The magnetostatic-wave device of claim 2 wherein said separate fingers of said input conductive layer are individually connected to the drain contacts of said separate transistors, and wherein said source contacts of the transistors are connected together.

Claim 7

The magnetostatic-wave device of claim 2 wherein said separate fingers of said input conductive layer are individually connected to the source contacts of the separate transistors, and wherein said drain contacts of said transistors are connected together.

Claim 8

The magnetostatic-wave device of claim 2 wherein said means for separately controlling the amplitude applied to each of said fingers includes changing the contact widths of the transistors connected to the fingers.

Claim 9

The magnetostatic-wave device of claim 7 wherein the distribution of the contact widths of said separate transistors is symmetrical on both sides of the transistor connected to the center-most finger structure.

Claim 10

The magnetostatic-wave device of claim 8 wherein the contact widths of said transistors vary to provide a distribution equal to sin(x)/x across said input conductive layer.

Claim 11

The magnetostatic-wave device of claim 1 wherein the dimensions and spacing of each of said finger structure are the same.

Claim 12

The magnetostatic-wave device of claim 1 wherein at least one of said fingers of the conductive layer is connected so that the current in said finger is 180 degrees out of phase with said current in an adjacent finger.

Claim 13

The magnetostatic-wave device of claim 11 wherein two groups of field effect transistors are used to excite one finger structures, with each group being separately driven in 180-degree phase relation by signals from effectively opposite ends of a transformer device.

Claim 14

The magnetostatic-wave device of claim 1 wherein the output transducer includes: an output conductive layer located at the output end of the ferrimagnetic material; and separate three-contact field effect transistors each having their gate contacts connected to said separate finger structure of said output conductive layer and each having one of their contacts connected together and to the output terminal.

Claim 15

The magnetostatic-wave device of claim 13 wherein said separate three contact field effect transistors are integrated onto a common semiconductor chip.

Claim 16

The magnetostatic-wave device of claim 14 wherein the contact widths of said transistors connected to the output fingers are changed to control the amplitude and phase of the finger signal component which is combined to produce the signal at said output terminal of the magnetostatic-wave device.

Claim 17

The magnetostatic-wave device of claim 15 wherein said contact widths of said separate three contact transistors are symmetrical on both sides of said transistor which is connected to said center-most output finger structure.

Claim 18

The magnetostatic-wave device of claim 16 wherein said contact widths of said transistors vary to provide a distribution equal to sin(x)/x.

Claim 19

The magnetostatic-wave device of claim 17 wherein at least one of said fingers of said output conductive layer is connected so that the current in said finger is combined 180 degrees out of phase with the current in an adjacent finger.

Claim 20

A magnetostatic-wave device including a ferrimagnetic material having an input transducer located at one of its ends and an output transducer located at its other end, said device having means for applying a magnetic field to the ferrimagnetic material between its ends, and said input transducer comprising: a conductive layer located on the ferrimagnetic material, said layer being divided into a plurality of separate finger structures which extend across the ferrimagnetic material in a direction which is perpendicular to the direction of propagation of the signal in the ferrimagnetic material produced by said input transducer; a symmetrical array of field effect transistors each having gate, source and drain contacts integrated onto a common semiconductor chip, with the junction widths of the transistors being dependent upon their location in the array; means for connecting together the gate contacts of each transistor and for connecting said gate contacts to an input microwave signal; means for connecting together one of the other two contacts of all of said transistors; means for connecting the remaining contacts of said transistors to a separate finger structure of the conductive layer; said junction widths of said transistors being dimensioned to apply the desired amplitude of the microwave input signal to the finger structures connected to the transistors.

Claim 21

A magnetostatic-wave device including a ferrimagnetic material having an input transducer located at one of its ends and an output transducer located at its other end, said device having means for applying a magnetic field to the ferrimagnetic material between its ends, and said input transducer comprising: a conductive layer located on the ferrimagnetic material, said layer being divided into a plurality of separate finger structures which extend across the ferrimagnetic material in a direction which is perpendicular to the direction of propagation of the signal in the ferrimagnetic material produced by said input transducer; a symmetrical array of field effect transistors each having gate, source and drain contacts integrated onto a common semiconductor chip, with the junction widths of the transistors being dependent upon their location in the array; means for connecting together the gate contacts of each transistor and for connecting said gate contacts to an input microwave signal; means for connecting together one of the other two contacts of all of said transistors; means for connecting the remaining contacts of said transistors to a separate finger structure of the conductive layer; said junction widths of said transistors being dimensioned to apply the desired amplitude of the microwave input signal to the finger structures connected to the transistors.

Claim 22

The magnetostatic-wave device of claim 19 wherein the junction widths of the transistors are smaller for transistors connected to finger structures located farther from the center-most finger structure.

Claim 23

The magnetostatic-wave device of claim 19 wherein the transistor contact widths are varied to provide a signal distribution equal to sin(x)/x across the multi-fingered conductive layer.

Claim 24

The magnetostatic-wave device of claim 21 wherein at least one of the finger structures is connected so that the current in said finger is 180 degrees out of phase with the current in an adjacent finger.