Integrated circuit trench cell

Claim 2

An integrated circuit formed in a substrate, comprising a trench having walls and a top portion and a bottom portion, a trench capacitor comprising two plates, the capacitor formed on the walls of the trench leaving a narrowed trench within the trench after the formation of both plates, and a transistor formed within the narrowed trench within the capacitor and isolated therefrom.

Claim 3

The integrated circuit of claim 1 wherein the transistor has a vertical carrier path between the top and bottom of the trench.

Claim 4

The integrated circuit of claim 2 wherein the transistor further comprises a gate, and the capacitor and the gate of the transistor surround the vertical carrier path of the transistor.

Claim 5

The integrated circuit of claim 1 wherein the capacitor has a plate and the transistor has a source/drain region and wherein the plate and the source/drain region are identical.

Claim 6

A trench integrated circuit cell formed in a face of a semiconductor substrate comprising: a trench having at least one vertical wall and a bottom surface within the face of the semiconductor substrate; a capacitor comprising two plates, the capacitor formed on the wall of the trench leaving a narrowed vertical trench after the formation of both plates having a top and a bottom; and a transistor within the narrowed vertical trench comprising two source/drain regions, a vertical channel and a gate, the source/drain regions being formed by heavily doped regions oriented one over the other in the narrowed trench having the channel between them, wherein the gate surrounds the vertical channel and is separated therefrom by a thin dielectric layer, and one of the source/drain regions is electrically connected to the capacitor.

Claim 7

A trench integrated circuit cell formed in a face of a semiconductor substrate comprising: a trench having at least one vertical wall and a bottom surface within the face of the semiconductor substrate; a capacitor comprising two plates, the capacitor formed on the wall of the trench leaving a narrowed vertical trench after the formation of both plates having a top and a bottom; and a transistor within the narrowed vertical trench comprising two source/drain regions, a vertical channel and a gate, the source/drain regions being formed by heavily doped regions oriented one over the other in the narrowed trench having the channel between them, wherein the gate surrounds the vertical channel and is separated therefrom by a thin dielectric layer, and one of the source/drain regions is electrically connected to the capacitor.

Claim 8

The integrated circuit cell of claim 5 wherein the capacitor and the transistor that are electrically connected together have a common region serving simultaneously as the plate of the capacitor and as one of the transistor's source/drain regions.

Claim 9

The integrated circuit cell of claim 5 wherein the cell is divided into two or more cells by at least one or more intersecting isolation regions.

Claim 10

A trench integrated circuit cell formed within a semiconductor substrate comprising: a trench within a face of the semiconductor substrate, the trench comprising at least one vertical wall and one horizontal bottom surface; a capacitor within the trench in the surface of the semiconductor substrate comprising two plates and a dielectric between them, where the plates and the dielectric are formed along the wall of the trench; and a transistor within the capacitor in the surface of the semiconductor comprising: a first source/drain conductive layer at the bottom of the trench, which layer is coincident with one of the capacitor plates; a second drain/source conductive layer within the trench above the first source/drain conductive layer; a region of semiconductor material within the trench to form a vertical channel between the first source/drain conductive layer and the second drain/source conductive layer; and a gate electrode surrounding the vertical channel region of semiconductor material and separated from the vertical channel region of semiconductor material by a thin layer of dielectric material.

Claim 11

A trench integrated circuit cell formed within a semiconductor substrate comprising: a trench within a face of the semiconductor substrate, the trench comprising at least one vertical wall and one horizontal bottom surface; a capacitor within the trench in the surface of the semiconductor substrate comprising two plates and a dielectric between them, where the plates and the dielectric are formed along the wall of the trench; and a transistor within the capacitor in the surface of the semiconductor comprising: a first source/drain conductive layer at the bottom of the trench, which layer is coincident with one of the capacitor plates; a second drain/source conductive layer within the trench above the first source/drain conductive layer; a region of semiconductor material within the trench to form a vertical channel between the first source/drain conductive layer and the second drain/source conductive layer; and a gate electrode surrounding the vertical channel region of semiconductor material and separated from the vertical channel region of semiconductor material by a thin layer of dielectric material.

Claim 12

The integrated circuit cell of claim 8 wherein the cell is divided into two or more cells by at least one or more intersecting isolation regions.

Claim 13

An integrated circuit cell formed within a semiconductor substrate comprising: a trench within a face of the semiconductor substrate, the trench comprising at least one vertical wall and one horizontal bottom surface; a capacitor within the trench in the surface of the semiconductor substrate comprising: a doped trench wall forming one plate of the capacitor; a capacitor dielectric layer covering the doped trench wall surface; a first conductive layer comprising a semiconductor material covering the capacitor dielectric layer forming another plate of the capacitor; and a narrowed trench within the the first conductive layer of the capacitor; and a transistor within the narrowed trench in the face of the semiconductor comprising: a first source/drain conductive layer identical with the first conductive layer of the capacitor; a first transistor dielectric layer covering the first source/drain conductive layer; a transistor gate layer covering the first transistor dielectric layer; a second transistor dielectric layer covering the transistor gate layer; a second drain/source conductive layer in the form of a central plug in the trench above the first source/drain conductive layer; a carrier channel pathway through portions of the first transistor dielectric layer, transistor gate layer and second transistor dielectric layer, connecting the second drain/source conductive layer with the first source/drain conductive layer, such that second drain/source conductive layer is insulated from the transistor gate layer by the second transistor dielectric layer; and first and second regions of doping at the bottom and top of the second drain/source conductive layer, respectively.

Claim 14

An integrated circuit cell formed within a semiconductor substrate comprising: a trench within a face of the semiconductor substrate, the trench comprising at least one vertical wall and one horizontal bottom surface; a capacitor within the trench in the surface of the semiconductor substrate comprising: a doped trench wall forming one plate of the capacitor; a capacitor dielectric layer covering the doped trench wall surface; a first conductive layer comprising a semiconductor material covering the capacitor dielectric layer forming another plate of the capacitor; and a narrowed trench within the the first conductive layer of the capacitor; and a transistor within the narrowed trench in the face of the semiconductor comprising: a first source/drain conductive layer identical with the first conductive layer of the capacitor; a first transistor dielectric layer covering the first source/drain conductive layer; a transistor gate layer covering the first transistor dielectric layer; a second transistor dielectric layer covering the transistor gate layer; a second drain/source conductive layer in the form of a central plug in the trench above the first source/drain conductive layer; a carrier channel pathway through portions of the first transistor dielectric layer, transistor gate layer and second transistor dielectric layer, connecting the second drain/source conductive layer with the first source/drain conductive layer, such that second drain/source conductive layer is insulated from the transistor gate layer by the second transistor dielectric layer; and first and second regions of doping at the bottom and top of the second drain/source conductive layer, respectively.

Claim 15

The integrated circuit cell of claim 10 wherein the cell is divided into two or more cells by at least one or more intersecting isolation regions.

Claim 16

An integrated circuit cell formed within a semiconductor substrate comprising: a trench within a face of the semiconductor substrate, the trench having at least one vertical wall and one horizontal bottom surface; a capacitor within the trench in the surface of the semiconductor substrate comprising: a trench wall forming one plate of the capacitor, doped with an impurity of a first conductivity type; a capacitor dielectric layer covering the doped trench wall; and a first conductive layer comprising a semiconductor material, doped with an impurity of the first conductivity type, covering the capacitor dielectric layer forming another plate of the capacitor; and a transistor within the trench in the face of the semiconductor comprising: a first source/drain conductive layer identical with the first conductive layer of the capacitor; a first transistor dielectric layer covering the first source/drain conductive layer; a transistor gate layer covering the first transistor dielectric layer, the transistor gate layer comprising a semiconductor material of the first conductivity type; a second transistor dielectric layer covering the transistor gate layer; a second drain/source conductive layer in the form of a central plug within the trench that remains above the first source/drain conductive layer, the second drain/source conductive layer comprising a semiconductor material of a second conductivity type, and having a bottom and top; a carrier channel pathway through portions of the first transistor dielectric layer, transistor gate layer and second transistor dielectric layer, connecting the second drain/source conductive layer with the first source/drain conductive layer, such that second drain/source conductive layer is insulated from the transistor gate layer by the second transistor dielectric layer; and first and second regions of doping of the first conductivity type at the bottom and top, respectively, of the second drain/source conductive layer.

Claim 17

An integrated circuit cell formed within a semiconductor substrate comprising: a trench within a face of the semiconductor substrate, the trench having at least one vertical wall and one horizontal bottom surface; a capacitor within the trench in the surface of the semiconductor substrate comprising: a trench wall forming one plate of the capacitor, doped with an impurity of a first conductivity type; a capacitor dielectric layer covering the doped trench wall; and a first conductive layer comprising a semiconductor material, doped with an impurity of the first conductivity type, covering the capacitor dielectric layer forming another plate of the capacitor; and a transistor within the trench in the face of the semiconductor comprising: a first source/drain conductive layer identical with the first conductive layer of the capacitor; a first transistor dielectric layer covering the first source/drain conductive layer; a transistor gate layer covering the first transistor dielectric layer, the transistor gate layer comprising a semiconductor material of the first conductivity type; a second transistor dielectric layer covering the transistor gate layer; a second drain/source conductive layer in the form of a central plug within the trench that remains above the first source/drain conductive layer, the second drain/source conductive layer comprising a semiconductor material of a second conductivity type, and having a bottom and top; a carrier channel pathway through portions of the first transistor dielectric layer, transistor gate layer and second transistor dielectric layer, connecting the second drain/source conductive layer with the first source/drain conductive layer, such that second drain/source conductive layer is insulated from the transistor gate layer by the second transistor dielectric layer; and first and second regions of doping of the first conductivity type at the bottom and top, respectively, of the second drain/source conductive layer.

Claim 18

The integrated circuit cell of claim 12 wherein the cell is divided into two or more cells by at least one or more intersecting isolation regions.