← Back to Patent Explorer
US4705729A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for photochemically enhancing resolution in photolithography processes

Assignee: HP Inc
•
Filing: 1984-11-19
•
Granted: 1987-11-10
•
Expires: 2004-11-19
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract In the fabrication of integrated circuits, a polymethyl methacrylate film containing a selected dye and exhibiting a strong dependence on light intensity is photobleached to provide an optical mask to pattern an underlying photoresist layer. While the film is photobleached, the underlying photoresist layer is made to be substantially unaffected by the photobleaching process. When the optical mask is realized, it is used to mask the light-sensitive photoresist layer when the photoresist layer is exposed to light. However, the photobleached layer, which is also sensitive to light, is now in turn made to be substantially unaffected by the exposure process. In this manner, the integrity of the optical mask resolution is maintained at its optimum, and densely integrated circuits can be processed and fabricated.

Inventors

  • 👤 James R. Sheats

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 13:00
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/095

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 99 words
A method of processing integrated ciruits comprising the steps of: depositing a first layer of photoresistive material on a substrate; depositing a second layer containing a mixture of a polymer and a dye upon said first layer, said dye having a nonlinear photobleaching response to the intensity of an incident fluence; irradiating said second layer with a preselected pattern to convert said second layer to an optical mask of said preselected pattern without substantially effecting said first layer; and illuminating said second layer to transfer said preselected pattern to said first layer without substantially further effecting said second layer.
Claim 2
Independent Claim 99 words
A method of processing integrated ciruits comprising the steps of: depositing a first layer of photoresistive material on a substrate; depositing a second layer containing a mixture of a polymer and a dye upon said first layer, said dye having a nonlinear photobleaching response to the intensity of an incident fluence; irradiating said second layer with a preselected pattern to convert said second layer to an optical mask of said preselected pattern without substantially effecting said first layer; and illuminating said second layer to transfer said preselected pattern to said first layer without substantially further effecting said second layer.
Claim 3
Dependent Claim 11 words
The method as in claim 1, wherein said dye is acridine.
Claim 4
Dependent Claim 13 words
The method as in claim 2, wherein said polymer is polymethyl methacrylate (PMMA).
Claim 5
Dependent Claim 17 words
The method as in claim 3, wherein said step of irradiating is irradiating with an excimer laser.

References Cited (Backward Citations)

US3502476A Cited
US3615562A Cited
US4448873A Cited
US4515877A Cited
EP1101652A1 Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1990-11-09 1991-05-11 1991-11-10 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1994-11-09 1995-05-11 1995-11-10 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1998-11-09 1999-05-11 1999-11-10 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag