US4707723A
Expired / Lapsed
US
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Semiconductor device using a refractory metal as an electrode and interconnection
Assignee: Mitsubishi Electric Corp
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Filing: 1986-02-18
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Granted: 1987-11-17
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Expires: 2006-02-18
Abstract
Abstract A semiconductor device in which a multilayer film comprising a low resistance refractory metal silicide film and a low resistance ternary alloy film formed thereon and having corrosion resistance to hydrofluoric acid is used as an electrode and interconnection. The above stated low resistance refractory metal silicide is titanium silicide or tantalum silicide. The above stated ternary alloy is titanium-M-silicon or tantalum-M-silicon, M being any of molybdenum, tungsten, niobium, vanadium and tantalum.
Inventors
- 👤 Tatsuo Okamoto
- 👤 Masahiro Shimizu
- 👤 Katsuhiro Tsukamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 10:10
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441; H10D; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/60; H10D64/62; H10D64/66; H10D64/661; H10D64/662; H10D64/663
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
74 words
A semiconductor device including a refractory metal in an electrode and interconnection of a multilayer structure formed on a semiconductor substrate, said electrode and interconnection comprising: a low resistance metal silicide layer, and a refractory ternary alloy layer of a low resistance formed on said low resistance metal silicide layer and having corrosion resistance to chemicals containing hydrofluoric acid, said ternary alloy layer comprising a first refractory metal, a second refractory metal and silicon.
Claim 2
Dependent Claim
74 words
A semiconductor device including a refractory metal in an electrode and interconnection of a multilayer structure formed on a semiconductor substrate, said electrode and interconnection comprising: a low resistance metal silicide layer, and a refractory ternary alloy layer of a low resistance formed on said low resistance metal silicide layer and having corrosion resistance to chemicals containing hydrofluoric acid, said ternary alloy layer comprising a first refractory metal, a second refractory metal and silicon.
Claim 3
Dependent Claim
31 words
A semiconductor device using a refractory metal as an electrode and interconnection in accordance with claim 1, wherein said low resistance metal silicide layer is a layer formed of titanium silicide.
Claim 4
Dependent Claim
31 words
A semiconductor device using a refractory metal as an electrode and interconnection in accordance with claim 1, wherein said low resistance metal silicide layer is a layer formed of tantalum silicide.
Claim 5
Dependent Claim
66 words
A semiconductor device using a refractory metal as an electrode and interconnection in accordance with claim 1, wherein assuming that said ternary alloy is represented as R X M Y Si Z , X and Y satisfy the conditions: 0<X/Y≦1 in the vicinity of the top surface of said ternary alloy layer, and 1≦X/Y<˜ in the vicinity of the bottom surface of said ternary alloy layer.
Claim 6
Dependent Claim
45 words
A semiconductor device using a refractory metal as an electrode and interconnection in accordance with claim 4, wherein said X and said Y satisfy the condition of X+Y=1 and are changed linearly from the top surface to the bottom surface of said ternary alloy layer.
Claim 7
Dependent Claim
24 words
A semiconductor device using a refractory metal as an electrode and interconnection in accordance with claim 1, wherein said ternary alloy is titanium-refractory metal-silicon.
Claim 8
Dependent Claim
24 words
A semiconductor device using a refractory metal as an electrode and interconnection in accordance with claim 1, wherein said ternary alloy is tantalum-refractory metal-silicon.
Claim 9
Dependent Claim
40 words
A semiconductor device using a refractory metal as an electrode and interconnection in accordance with claim 6, wherein said refractory metal included in said ternary alloy is any one selected among the group including molybdenum, tungsten, niobium, vanadium and tantalum.
Claim 10
Dependent Claim
39 words
A semiconductor device using a refractory metal as an electrode and interconnection in accordance with claim 7, wherein said refractory metal included in said ternary alloy is any one selected among the group including molybdenum, tungsten, niobium and vanadium.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-11-16 | 1991-05-18 | 1991-11-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-11-16 | 1995-05-18 | 1995-11-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-11-16 | 1999-05-18 | 1999-11-17 | $7700.00 | Window Closed / Lapsed |