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US4707725A Expired / Lapsed US ⏱️ 0.0 years remaining

Fluorescent coating for uv sensitive semiconductor device

Assignee: Mitsubishi Electric Corp
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Filing: 1986-08-26
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Granted: 1987-11-17
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Expires: 2006-08-26
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Abstract

Abstract A package for an EPROM provided with an ultraviolet-ray generating layer formed on the surface of an EPROM semiconductor chip to be excited by X-rays or gamma rays to generate ultraviolet rays, and both of the semiconductor chip and the ultraviolet-ray generating layer being sealed with a synthetic resin layer transmitting X-rays or gamma rays.

Inventors

  • 👤 Eizo Ito

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-07 15:04
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/10; G11C16/18; H; H10; H10W; H10W72/00; H10W72/01; H10W72/015; H10W72/01515; H10W72/071; H10W72/075; H10W74/00; H10W74/10; H10W90/00; H10W90/701; H10W90/751; H10W90/756

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 96 words
A semiconductor device including an erasable programmable read-only memory whose storage contents are erased by ultraviolet rays supplied through an ultraviolet-irradiated surface, said semiconductor device comprising: a semiconductor chip provided thereon with said programmable read-only memory erasable with ultraviolet rays and having said ultraviolet-irradiated surface; an ultraviolet-ray generating layer formed on said ultraviolet-irradiated surface for generating ultraviolet rays in response to externally supplied energy rays to supply the same to said ultraviolet-irradiated surface; and a synthetic resin layer provided to cover said semiconductor chip and said ultraviolet-ray generating layer for transmitting said externally supplied energy rays.
Claim 2
Dependent Claim 96 words
A semiconductor device including an erasable programmable read-only memory whose storage contents are erased by ultraviolet rays supplied through an ultraviolet-irradiated surface, said semiconductor device comprising: a semiconductor chip provided thereon with said programmable read-only memory erasable with ultraviolet rays and having said ultraviolet-irradiated surface; an ultraviolet-ray generating layer formed on said ultraviolet-irradiated surface for generating ultraviolet rays in response to externally supplied energy rays to supply the same to said ultraviolet-irradiated surface; and a synthetic resin layer provided to cover said semiconductor chip and said ultraviolet-ray generating layer for transmitting said externally supplied energy rays.
Claim 3
Dependent Claim 35 words
A semiconductor device in accordance with claim 1, wherein said ultraviolet-ray generating layer is formed by a layer containing fluorescent material which can be excited by said externally supplied energy rays to generate ultraviolet rays.
Claim 4
Dependent Claim 36 words
A semiconductor device in accordance with claim 2, wherein said ultraviolet ray generating layer further includes an ultraviolet-ray transmitting layer formed between said layer containing said fluorescent material and said ultraviolet-irradiated surface of said semiconductor chip.
Claim 5
Dependent Claim 18 words
A semiconductor device in accordance with claim 1, wherein said synthetic resin layer is prepared by epoxy resin.
Claim 6
Dependent Claim 22 words
A semiconductor device in accordance with claim 2, wherein said fluorescent material for generating ultraviolet rays is BaSi 2 O 5 :Pb.
Claim 7
Dependent Claim 18 words
A semiconductor device in accordance with claim 2, wherein said fluorescent material for generating ultraviolet rays is LaOBr:Tm.
Claim 8
Dependent Claim 18 words
A semiconductor device in accordance with claim 3, wherein said ultraviolet-ray transmitting layer is prepared by silicone resin.
Claim 9
Dependent Claim 14 words
A semiconductor device in accordance with claim 1, wherein said energy rays are X-rays.
Claim 10
Dependent Claim 15 words
A semiconductor device in accordance with claim 1, wherein said energy rays are gamma rays.

References Cited (Backward Citations)

JPS5730351A Cited
JPS58106851A Cited
JPS58200558A Cited
JPS6083351A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1990-11-16 1991-05-18 1991-11-17 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1994-11-16 1995-05-18 1995-11-17 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1998-11-16 1999-05-18 1999-11-17 $7700.00 Window Closed / Lapsed

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