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US4709371A Expired / Lapsed US ⏱️ 0.0 years remaining

Variable wavelength laser diode

Assignee: Individual
•
Filing: 1985-10-18
•
Granted: 1987-11-24
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Expires: 2005-10-18
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Abstract

Abstract A semiconductor laser diode capable of generating variable wavelengths includes an oxide layer having an elongated cavity or gap formed through the oxide layer for outputting a band of wavelengths therefrom. A fiber optic may be connected to the cavity or gap to operate the diode as a light modulating transmitter.

Inventors

  • 👤 Fred D. West

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 12:58
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; H01S5/10; H01S5/1053; H01S5/106; H01S5/1064; H01S5/2275

Claims Analysis

Total Claims: 13
Claim 1
Independent Claim 114 words
A variable wavelength semiconductor laser comprising: a first semiconductor layer; a second semiconductor layer having first and second surfaces, said first surface contiguous with said first semiconductor layer forming a light emitting junction at the interface of said first and second semiconductor layers; an oxide layer contiguous with said second surface of said second semiconductor layer; said oxide layer having a first opening of cross sectional area positioned within a first edge of said oxide layer and a second opening of cross sectional area larger than the first opening and positioned in a second edge opposite the first edge; and tapered passage means positioned between said first and second openings completing a passage therethrough.
Claim 2
Dependent Claim 114 words
A variable wavelength semiconductor laser comprising: a first semiconductor layer; a second semiconductor layer having first and second surfaces, said first surface contiguous with said first semiconductor layer forming a light emitting junction at the interface of said first and second semiconductor layers; an oxide layer contiguous with said second surface of said second semiconductor layer; said oxide layer having a first opening of cross sectional area positioned within a first edge of said oxide layer and a second opening of cross sectional area larger than the first opening and positioned in a second edge opposite the first edge; and tapered passage means positioned between said first and second openings completing a passage therethrough.
Claim 3
Dependent Claim 31 words
The laser set forth in claim 1 together with fiber optic means positioned in optical alignment with the tapered passage means for enabling the laser to operate as a modulating transmitter.
Claim 4
Dependent Claim 18 words
The laser set forth in claim 1 wherein the tapered passage means is characterized as an elongated gap.
Claim 5
Dependent Claim 18 words
The laser set forth in claim 1 wherein the tapered passage means in characterized as an elongated cavity.
Claim 6
Dependent Claim 57 words
The laser set forth in claim 1 wherein said first opening in the nature of a square-shaped gap is centrally located along the first edge of the oxide layer and said second opening in the nature of a rectangular gap is centrally located along an opposite edge of the oxide layer thereby creating a tapered elongated gap.
Claim 7
Dependent Claim 25 words
The laser set forth in claim 1 wherein the oxide layer is sandwiched between said second semiconductor layer and a third layer of conductive material.
Claim 8
Dependent Claim 28 words
The laser set forth in claim 3 wherein the oxide layer has upper and lower surfaces tapered in substantially parallel relation to corresponding surfaces of the elongated gap.
Claim 9
Dependent Claim 28 words
The laser set forth in claim 4 wherein the oxide layer has upper and lower surfaces tapered in substantially parallel relation to corresponding surfaces of the elongated cavity.
Claim 10
Dependent Claim 20 words
The laser set forth in claim 6 wherein the second and third layers have untapered interfaces with the oxide layer.
Claim 11
Dependent Claim 21 words
The laser set forth in claim 6 wherein the second and third layers have tapered interfaces mating with the oxide layer.
Claim 12
Dependent Claim 156 words
A variable wavelength semiconductor laser comprising: first and second semiconductor layers; an active semiconductor layer intermediate to and contiguous with said first and second layers forming a light emitting junction at the interface between a first surface of said second layer and said active layer; said first and second layers having a higher bandgap and a lower refractive index than said active layer so that light propagates in said active layer perpendicular to the junction by waveguiding action; an oxide layer contiguous with a second surface of said second layer and in opposition to said junction; said oxide layer having a first opening of rectangular cross sectional area positioned within a first edge of said oxide layer and a second opening of rectangular cross sectional area larger than the first opening and positioned in an opposite edge of said oxide layer; and tapered passage means positioned between said first and second openings completing a passage therethrough.
Claim 13
Dependent Claim 156 words
A variable wavelength semiconductor laser comprising: first and second semiconductor layers; an active semiconductor layer intermediate to and contiguous with said first and second layers forming a light emitting junction at the interface between a first surface of said second layer and said active layer; said first and second layers having a higher bandgap and a lower refractive index than said active layer so that light propagates in said active layer perpendicular to the junction by waveguiding action; an oxide layer contiguous with a second surface of said second layer and in opposition to said junction; said oxide layer having a first opening of rectangular cross sectional area positioned within a first edge of said oxide layer and a second opening of rectangular cross sectional area larger than the first opening and positioned in an opposite edge of said oxide layer; and tapered passage means positioned between said first and second openings completing a passage therethrough.

References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1990-11-23 1991-05-25 1991-11-24 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1994-11-23 1995-05-25 1995-11-24 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1998-11-23 1999-05-25 1999-11-24 $7700.00 Window Closed / Lapsed

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