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US4740387A Expired / Lapsed US ⏱️ 0.0 years remaining

Low power gas detector

Assignee: Ricoh Seiki Co Ltd
•
Filing: 1986-03-10
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Granted: 1988-04-26
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Expires: 2006-03-10
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Abstract

Abstract A gas detector includes a gas detecting element comprised of a metal oxide semiconductor material which changes its value of electrical resistance at an elevated temperature when it absorbs a gas. In one form, the gas detecting element is supported in the form of a bridge so as to increase its response speed by making thermal capacity as small as possible. In another form, the gas detecting element is supported in the form a cantilever, more preferably in the form of a ring as formed along the periphery of a overhang portion of a disc-shaped layer of electrically insulating material. Also provided is a process for manufacturing a thin film of metal oxide, which may be advantageously used as a gas detecting element of a gas detector or a transparent electrode, for example, in a liquid crystal panel.

Inventors

  • 👤 Junji Manaka

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 11:10
CPC Classifications
G; G01; G01N; G01N27/00; G01N27/02; G01N27/04; G01N27/12; H; H01; H01J; H01J2217/00; H01J2217/38; H01J2217/49; H01J2217/492; H01J2217/49207

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 81 words
A method for manufacturing a film of metal oxide comprising the steps of: forming a thin film of metal on a substrate; reacting said thin film of metal with a dilute nitric acid thereby converting the film into a first film of a reactant produced in a reaction between said metal and said dilute nitric acid; and thermally decomposing said first film thereby converting said first film into a film of a metal oxide which is produced during the thermal decomposition.
Claim 2
Independent Claim 81 words
A method for manufacturing a film of metal oxide comprising the steps of: forming a thin film of metal on a substrate; reacting said thin film of metal with a dilute nitric acid thereby converting the film into a first film of a reactant produced in a reaction between said metal and said dilute nitric acid; and thermally decomposing said first film thereby converting said first film into a film of a metal oxide which is produced during the thermal decomposition.
Claim 3
Dependent Claim 10 words
A method of claim 1 wherein said metal comprises Sn.
Claim 4
Dependent Claim 10 words
A method of claim 1 wherein said metal comprises Al.
Claim 5
Dependent Claim 25 words
A method of claim 2 wherein said metal oxide film is a gas detecting film which changes its electrical resistance when it absorbs a gas.
Claim 6
Dependent Claim 15 words
A method of claim 2 wherein said metal oxide film is a transparent electrode film.
Claim 7
Dependent Claim 25 words
A method of claim 3 further comprising the step of depositing Pt and Pd onto said film of metal prior to the step of reacting.

References Cited (Backward Citations)

US4052271A Cited
US4362765A Cited
US4342792A Cited
US4614669A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1991-04-26 1991-10-26 1992-04-26 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1995-04-26 1995-10-26 1996-04-26 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1999-04-26 1999-10-26 2000-04-26 $7700.00 Window Closed / Lapsed

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