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US4745409A Expired / Lapsed US ⏱️ 0.0 years remaining

Broadband signal space switching device

Assignee: Siemens AG
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Filing: 1986-10-16
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Granted: 1988-05-17
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Expires: 2006-10-16
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Abstract

Abstract In a broadband signal space switching device, the respective switching elements are controllable by a decoder-controlled, crosspoint-associated memory cell and are respectively formed with a CMOS inverter circuit having MOS transistors of the enhancement type which lie between a switching element input and a switching element output. A further p-channel transistor, likewise of the enhancement type, is inserted between the p-channel enhancement transistor and the appertaining feed voltage source and a further n-channel transistor, likewise of the enhancement type, is inserted between the n-channel enhancement transistor and the appertaining feed voltage source. The control electrodes of the further enhancement transistors are connected to the outputs of the memory cell.

Inventors

  • 👤 Rudiger Hofmann

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 19:10
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/02; H03K19/08; H03K19/094; H03K19/09425; H03K19/09429; H04; H04Q; H04Q3/00; H04Q3/42; H04Q3/52; H04Q3/521

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 220 words
In a broadband signal space switching device in which a plurality of crosspoints are arranged in a matrix of columns and rows formed by input lines and output lines, in which the crosspoints each include a decoder-controlled bistable memory cell having complementary outputs, in which each crosspoint comprises a complementary metal-oxide-semiconductor inverter including an input connected to a respective input line, an output connected to a respective output line, a first MOS transistor connected to a first feed potential, a second MOS transistor connected between said first MOS transistor and a second feed potential, and in which each of said first and second MOS transistors comprises a gate connected to a respective input line, and in which the junction of the first and second transistors is connected to the respective output line, and in which the first transistor is a p-channel transistor of the enhancement type and said second transistor is an n-channel transistor of the enhancement type, the improvement comprising: a p-channel third transistor of the enhancement type connected between said first transistor and the respective feed potential; and an n-channel fourth transistor of the enhancement type connected between said n-channel second transistor and the appertaining feed voltage, each of said third and fourth transistors comprising a gate connected to a respective complementary output of the respective memory cell.
Claim 2
Dependent Claim 220 words
In a broadband signal space switching device in which a plurality of crosspoints are arranged in a matrix of columns and rows formed by input lines and output lines, in which the crosspoints each include a decoder-controlled bistable memory cell having complementary outputs, in which each crosspoint comprises a complementary metal-oxide-semiconductor inverter including an input connected to a respective input line, an output connected to a respective output line, a first MOS transistor connected to a first feed potential, a second MOS transistor connected between said first MOS transistor and a second feed potential, and in which each of said first and second MOS transistors comprises a gate connected to a respective input line, and in which the junction of the first and second transistors is connected to the respective output line, and in which the first transistor is a p-channel transistor of the enhancement type and said second transistor is an n-channel transistor of the enhancement type, the improvement comprising: a p-channel third transistor of the enhancement type connected between said first transistor and the respective feed potential; and an n-channel fourth transistor of the enhancement type connected between said n-channel second transistor and the appertaining feed voltage, each of said third and fourth transistors comprising a gate connected to a respective complementary output of the respective memory cell.

References Cited (Backward Citations)

US3618024A Cited
US3832495A Cited
US3980831A Cited
US4156153A Cited
US4446552A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1991-05-17 1991-11-16 1992-05-17 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1995-05-17 1995-11-16 1996-05-17 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1999-05-17 1999-11-16 2000-05-17 $7700.00 Window Closed / Lapsed

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