US4745615A
Expired / Lapsed
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Semiconductor laser device with a diffraction grating
Assignee: Sharp Corp
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Filing: 1985-10-21
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Granted: 1988-05-17
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Expires: 2005-10-21
Abstract
Abstract A semiconductor laser device for laser oscillation at a wavelength in the range of from 660 nm to 890 nm which includes an active layer of Ga 1-x Al x As (0≦x≦0.4) or In 1-y Ga y P 1-z As z (0.51≦y≦1, 0≦z≦1, and z=2.04y-1.04) and a layer with a diffraction grating thereon of In 1-y Ga y P 1-z As (z=2.04y-1.04) which is adjacent to the active layer.
Inventors
- 👤 Shinji Kaneiwa
- 👤 Haruhisa Takiguchi
- 👤 Toshihiko Yoshida
- 👤 Sadayoshi Matsui
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 07:54
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/10; H01S5/12; H01S5/3211
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
114 words
A semiconductor laser device, the improvment comprising: a multi-layer structure which includes, a first cladding layer, an active layer formed on said first cladding layer comprising Ga 1-x Al x As wherein x satisfies the relation 0≦x≦0.4, an optical guiding layer formed on said active layer comprising In 1-y Ga y P 1-z As z wherein y and z satisfy the relations 0.51≦y≦1, 0≦z≦1, and z=2.04y-1.04 and wherein said optical guiding layer has a diffraction grating formed thereon, and a second cladding layer formed on said optical guiding layer, wherein said semiconductor laser device employing said multi-layer structure attains laser oscillation at a wavelength in the range of from 660 nm to 890 nm.
Claim 2
Dependent Claim
114 words
A semiconductor laser device, the improvment comprising: a multi-layer structure which includes, a first cladding layer, an active layer formed on said first cladding layer comprising Ga 1-x Al x As wherein x satisfies the relation 0≦x≦0.4, an optical guiding layer formed on said active layer comprising In 1-y Ga y P 1-z As z wherein y and z satisfy the relations 0.51≦y≦1, 0≦z≦1, and z=2.04y-1.04 and wherein said optical guiding layer has a diffraction grating formed thereon, and a second cladding layer formed on said optical guiding layer, wherein said semiconductor laser device employing said multi-layer structure attains laser oscillation at a wavelength in the range of from 660 nm to 890 nm.
Claim 3
Dependent Claim
24 words
A semiconductor laser device according to claim 1, wherein said first cladding layer and said second cladding layer comprise Ga 1-x Al x As.
Claim 4
Dependent Claim
34 words
A semiconductor laser device according to claim 1, wherein said first cladding layer comprises Ga 1-x Al x As and said second cladding layer comprises In 1-y Ga y P 1-z As z .
Claim 5
Dependent Claim
33 words
A semiconductor laser device according to claim 1, wherein said first cladding layer comprises In 1-y Ga y P 1-z As z and said second cladding layer comprises Ga 1-x Al x As.
Claim 6
Dependent Claim
27 words
A semiconductor laser device according to claim 1, wherein said first cladding layer and second cladding layer comprise In 1-y Ga y P 1-z As z .
Claim 7
Dependent Claim
106 words
A semiconductor laser device, the improvement comprising: a multi-layer structure which includes, a first cladding layer, an active layer formed on said first cladding layer comprising In 1-y Ga y P 1-z As z wherein y and z satisfy the relations 0.51≦y≦1, 0≦z≦1, and z=2.04y-1.04, an optical guiding layer formed on said active layer comprising In 1-y Ga y P 1-z As z and having a diffraction grating formed thereon, and a second cladding layer formed on said optical guiding layer, wherein said semiconductor laser device employing said multi-layer structure attains laser oscillation at a wavelength in the range of from 660 nm to 890 nm.
Claim 8
Dependent Claim
106 words
A semiconductor laser device, the improvement comprising: a multi-layer structure which includes, a first cladding layer, an active layer formed on said first cladding layer comprising In 1-y Ga y P 1-z As z wherein y and z satisfy the relations 0.51≦y≦1, 0≦z≦1, and z=2.04y-1.04, an optical guiding layer formed on said active layer comprising In 1-y Ga y P 1-z As z and having a diffraction grating formed thereon, and a second cladding layer formed on said optical guiding layer, wherein said semiconductor laser device employing said multi-layer structure attains laser oscillation at a wavelength in the range of from 660 nm to 890 nm.
Claim 9
Dependent Claim
24 words
A semiconductor laser device according to claim 6, wherein said first cladding layer and said second cladding layer comprise Ga 1-x Al x As.
Claim 10
Dependent Claim
34 words
A semiconductor laser device according to claim 6, wherein said first cladding layer comprises Ga 1-x Al x As and said second cladding layer comprises In 1-y Ga y P 1-z As z .
Claim 11
Dependent Claim
33 words
A semiconductor laser device according to claim 8, wherein said first cladding layer comprises In 1-y Ga y P 1-z As z and said second cladding layer comprises Ga 1-x Al x As.
Claim 12
Dependent Claim
27 words
A semiconductor laser device according to claim 6, wherein said first cladding layer and second cladding layer comprises In 1-y Ga y P 1-z As z .
Claim 13
Dependent Claim
108 words
A semiconductor laser device, the improvement comprising: a multi-layer structure which includes, a first cladding layer comprising In 1-y Ga y P 1-z As z wherein y and z satisfy the relations 0.51≦y≦1, 0≦z≦1, and z=2.04y-1.04 and wherein said first cladding layer has a diffraction grating formed thereon, an optical guiding layer formed on said first cladding layer, an active layer comprising Ga 1-x Al x As wherein x satisfies the relation 0≦x≦0.4, and a second cladding layer formed on said active layer, wherein said semiconductor laser device employing said multi-layer structure attains laser oscillation at a wavelength in the range of from 660 nm to 890 nm.
Claim 14
Dependent Claim
108 words
A semiconductor laser device, the improvement comprising: a multi-layer structure which includes, a first cladding layer comprising In 1-y Ga y P 1-z As z wherein y and z satisfy the relations 0.51≦y≦1, 0≦z≦1, and z=2.04y-1.04 and wherein said first cladding layer has a diffraction grating formed thereon, an optical guiding layer formed on said first cladding layer, an active layer comprising Ga 1-x Al x As wherein x satisfies the relation 0≦x≦0.4, and a second cladding layer formed on said active layer, wherein said semiconductor laser device employing said multi-layer structure attains laser oscillation at a wavelength in the range of from 660 nm to 890 nm.
Claim 15
Dependent Claim
24 words
A semiconductor laser device according to claim 11, wherein said optical guiding layer and said second cladding layer comprise Ga 1-x Al x As.
Claim 16
Dependent Claim
34 words
A semiconductor laser device according to claim 11, wherein said optical guiding layer comprises Ga 1-x Al x As and said second cladding layer comprises In 1-y Ga y P 1-z As z .
Claim 17
Dependent Claim
33 words
A semiconductor laser device according to claim 11, wherein said optical guiding layer comprises In 1-y Ga y P 1-z As z and said second cladding layer comprises Ga 1-x Al x As.
Claim 18
Dependent Claim
27 words
A semiconductor laser device according to claim 11, wherein said optical guiding layer and second cladding layer comprise In 1-y Ga y P 1-z As z .
Claim 19
Dependent Claim
112 words
A semiconductor laser device, the improvement comprising: a multi-layer structure which includes, a first cladding layer comprising In 1-y Ga y P 1-z As z wherein y and z satisfy the relations 0.51≦y≦1, 0≦z≦1, and z=2.04y-1.04 and wherein said first cladding layer has a diffraction grating formed thereon, an optical guiding layer formed on said first cladding layer, an active layer formed on said optical guiding layer comprising In 1-y Ga y P 1-z As z , and a second cladding layer formed on said active layer, wherein said semiconductor laser device employing said multi-layer structure attains laser oscillation at a wavelength in the range of from 660 nm to 890 nm.
Claim 20
Dependent Claim
112 words
A semiconductor laser device, the improvement comprising: a multi-layer structure which includes, a first cladding layer comprising In 1-y Ga y P 1-z As z wherein y and z satisfy the relations 0.51≦y≦1, 0≦z≦1, and z=2.04y-1.04 and wherein said first cladding layer has a diffraction grating formed thereon, an optical guiding layer formed on said first cladding layer, an active layer formed on said optical guiding layer comprising In 1-y Ga y P 1-z As z , and a second cladding layer formed on said active layer, wherein said semiconductor laser device employing said multi-layer structure attains laser oscillation at a wavelength in the range of from 660 nm to 890 nm.
Claim 21
Dependent Claim
24 words
A semiconductor laser device according to claim 16, wherein said optical guiding layer and said second cladding layer comprise Ga 1-x Al x As.
Claim 22
Dependent Claim
34 words
A semiconductor laser device according to claim 16, wherein said optical guiding layer comprises Ga 1-x Al x As and said second cladding layer comprises In 1-y Ga y P 1-z As z .
Claim 23
Dependent Claim
33 words
A semiconductor laser device according to claim 16, wherein said optical guiding layer comprises In 1-y Ga y P 1-z As z and said second cladding layer comprises Ga 1-x Al x As.
Claim 24
Dependent Claim
27 words
A semiconductor laser device according to claim 16, wherein said optical guiding layer and second cladding layer comprise In 1-y Ga y P 1-z As z .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-05-17 | 1991-11-16 | 1992-05-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-05-17 | 1995-11-16 | 1996-05-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-05-17 | 1999-11-16 | 2000-05-17 | $7700.00 | Window Closed / Lapsed |