US4769338A
Expired / Lapsed
US
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Thin film field effect transistor and method of making same
Assignee: Energy Conversion Devices Inc
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Filing: 1987-03-09
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Granted: 1988-09-06
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Expires: 2007-03-09
Abstract
Abstract There is disclosed a film field effect transistor which can be operated at fast switching rates for use, for example, in video display applications. The transistor includes a body of silicon semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistor comprise rectifying contacts formed on the body of silicon semiconductor material. Also disclosed are a method of making the transistor and an electronically addressable array system utilizing the transistor to advantage.
Inventors
- 👤 Stanford R. Ovshinsky
- 👤 Stephen J. Hudgens
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 19:51
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/40; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/674; H10D30/6741; H10D30/6743; H10D62/00; H10D62/40; H10D62/80; H10D62/83; H10D62/832; H10D64/00; H10D64/60; H10D64/64; H10D64/647; H10D86/60; H10P; H10P95/00; H10P95/90; Y; Y10; Y10S; Y10S148/00; Y10S148/003; Y10S148/122; Y10S148/139; Y10S148/15; Y10S148/169
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
81 words
A method of making a thin film field effect transistor comprising the steps of: forming a body of semiconductor material including at least silicon, said semiconductor material being formed with a structure more ordered than amorphous silicon semiconductor material and less ordered than single crystalline silicon semiconductor material; forming a source and a drain on the semiconductor material and in rectifying contact with said semiconductor material; and forming a gate electrode adjacent to and insulated from said body of semiconductor material.
Claim 2
Independent Claim
81 words
A method of making a thin film field effect transistor comprising the steps of: forming a body of semiconductor material including at least silicon, said semiconductor material being formed with a structure more ordered than amorphous silicon semiconductor material and less ordered than single crystalline silicon semiconductor material; forming a source and a drain on the semiconductor material and in rectifying contact with said semiconductor material; and forming a gate electrode adjacent to and insulated from said body of semiconductor material.
Claim 3
Dependent Claim
42 words
A method as defined in claim 1 wherein the body of semiconductor material is formed by depositing the silicon semiconductor material onto a substrate and wherein the substrate is heated to a temperature between 450° and 500° C. during the deposition thereof.
Claim 4
Dependent Claim
20 words
A method as defined in claim 2 wherein the semiconductor material is deposited to a thickness of about 1 micron.
Claim 5
Dependent Claim
23 words
A method as defined in claim 1 including the further step of annealing the semiconductor body prior to forming the drain and source.
Claim 6
Dependent Claim
18 words
A method as defined in claim 4 wherein the semiconductor body is annealed in a hydrogen gas atmosphere.
Claim 7
Dependent Claim
24 words
A method as defined in claim 4 wherein the semiconductor body is annealed in an atmosphere of a hydrogen gas and a forming gas.
Claim 8
Dependent Claim
13 words
A method as defined in claim 6 wherein the forming gas is nitrogen.
Claim 9
Dependent Claim
21 words
A method as defined in claim 6 wherein the semiconductor body is annealed at a pressure between 0.1 to 0.5 Torr.
Claim 10
Dependent Claim
17 words
A method as defined in claim 4 wherein the semiconductor body is annealed in a hydrogen plasma.
Claim 11
Dependent Claim
20 words
A method as defined in claim 9 wherein the semiconductor body is annealed at a temperature of about 500° C.
Claim 12
Dependent Claim
21 words
A method as defined in claim 9 wherin the semiconductor body is annealed at a pressure between 0.1 and 0.5 Torr.
Claim 13
Dependent Claim
17 words
A method as defined in claim 4 wherein the semiconductor body is annealed in a fluoride plasma.
Claim 14
Dependent Claim
20 words
A method as defined in claim 12 wherein the semiconductor body is annealed at a temperature of about 500° C.
Claim 15
Dependent Claim
21 words
A method as defined in claim 12 wherein the semiconductor body is annealed at a pressure between 0.1 and 0.5 Torr.
Claim 16
Dependent Claim
32 words
A method as defined in claim 1 wherein the source and drain are formed by depositing a doped semiconductor in at least two spaced apart regions on the body of semiconductor material.
Claim 17
Dependent Claim
16 words
A method as defined in claim 15 wherein the doped semiconductor comprises an amorphous semiconductor alloy.
Claim 18
Dependent Claim
14 words
A method as defined in claim 16 wherein the amorphous semiconductor alloy includes silicon.
Claim 19
Dependent Claim
14 words
A method as defined in claim 17 wherein the amorphous silicon alloy includes hydrogen.
Claim 20
Dependent Claim
14 words
A method as defined in claim 17 wherein the amorphous silicon alloy includes fluorine.
Claim 21
Dependent Claim
13 words
A method as defined in claim 15 wherein the doped semiconductor is n-type.
Claim 22
Dependent Claim
13 words
A thod as defined in claim 20 wherein the doped semiconductor includes phosphorus.
Claim 23
Dependent Claim
23 words
A method as defined in claim 1 further including forming an insulative layer between the gate electrode and the body of semiconductor material.
Claim 24
Dependent Claim
19 words
A method as defined in claim 22 wherein the insulative layer is formed from silicon oxide or silicon nitride.
Claim 25
Dependent Claim
16 words
A method as defined in claim 1 wherein the gate electrode is formed from a metal.
Claim 26
Dependent Claim
14 words
A method as defined in claim 24 wherein the metal is chromium or aluminum.
Claim 27
Dependent Claim
31 words
A method as defined in claim 1 wherein the source and drain are formed by depositing a metal on at least two spaced apart regions on the body of semiconductor material.
Claim 28
Dependent Claim
28 words
A method as defined in claim 26 wherein the body of semiconductor material is formed to be n-type and wherein the metal is a high work function metal.
Claim 29
Dependent Claim
18 words
A method as defined in claim 27 wherein the high work function metal is either platinum or palladium.
Claim 30
Dependent Claim
28 words
A method as defined in claim 26 wherein the body of semiconductor material is formed to be p-type and wherein the metal is a low work function metal.
Claim 31
Dependent Claim
17 words
A method as defined in claim 29 wherein the low work function metal is magnesium or ytterbium.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1991-09-06 | 1992-03-07 | 1992-09-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-09-06 | 1996-03-07 | 1996-09-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-09-06 | 2000-03-07 | 2000-09-06 | $7700.00 | Window Closed / Lapsed |