US4772365A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for etching materials
Assignee: HANS HOLLMULLER MASCHINENBAU & Co A CORP OF GERMANY GmbH
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Filing: 1986-11-12
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Granted: 1988-09-20
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Expires: 2006-11-12
Abstract
Abstract In a method for etching material to be etched, which consists at least partly of metal, an acid is used, which attacks the metal solely after the addition of an oxidizing agent directly before the actual etching operation. The addition of the oxidizing agent takes place in a quantity which slightly exceeds the quantity stoichiometrically necessary for removing the entire metal, so that a small residue of oxidizing agent remains in the etching medium dropping from the material to be etched. This residual oxidizing agent is then removed from the etching medium by a special device, which contains an excess of metal able to be etched by the etching medium.
Inventors
- 👤 Rainer D. Haas
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 18:15
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/02; H05K3/06; H05K3/067; C; C23; C23F; C23F1/00; C23F1/08; C23F1/10; C23F1/14; C23F1/16
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
211 words
A method for etching supports that have deposited thereon copper with an etching medium that includes sulfuric acid and hydrogen peroxide, said method including (a) providing a first etching zone, (b) conveying said supports with copper deposited thereon through said first etching zone, (c) spraying said supports with said etching medium containing an amount of hydrogen peroxide that is stoichiometrically in excess of that necessary to effect removal of the desired amount of copper from said supports as they move through said first etching zone, (d) withdrawing residual etching medium from said first etching zone to a first reservoir, (e) bringing residual etching medium from said first reservoir into contact with a quantity of copper that will completely consume all of the hydrogen peroxide in said residual etching medium, (f) thereafter regenerating the treated etching medium resulting from step (e), (g) introducing the regenerated etching medium from step (f) into said first reservoir, (h) withdrawing etching medium from said first reservoir and combining it with an amount of hydrogen peroxide that is stoichiometrically in excess of that necessary to effect removal of the copper from said supports conveyed to said first etching zone, and (i) introducing the etching medium resulting from step (h) as a spray into said first etching zone.
Claim 2
Independent Claim
211 words
A method for etching supports that have deposited thereon copper with an etching medium that includes sulfuric acid and hydrogen peroxide, said method including (a) providing a first etching zone, (b) conveying said supports with copper deposited thereon through said first etching zone, (c) spraying said supports with said etching medium containing an amount of hydrogen peroxide that is stoichiometrically in excess of that necessary to effect removal of the desired amount of copper from said supports as they move through said first etching zone, (d) withdrawing residual etching medium from said first etching zone to a first reservoir, (e) bringing residual etching medium from said first reservoir into contact with a quantity of copper that will completely consume all of the hydrogen peroxide in said residual etching medium, (f) thereafter regenerating the treated etching medium resulting from step (e), (g) introducing the regenerated etching medium from step (f) into said first reservoir, (h) withdrawing etching medium from said first reservoir and combining it with an amount of hydrogen peroxide that is stoichiometrically in excess of that necessary to effect removal of the copper from said supports conveyed to said first etching zone, and (i) introducing the etching medium resulting from step (h) as a spray into said first etching zone.
Claim 3
Dependent Claim
48 words
A method according to claim 1 wherein step (e) comprises providing a preliminary etching zone in advance of said first etching zone and bringing said residual etching medium set forth in step (e) into contact with the supports set forth in step (b) in said preliminary etching zone.
Claim 4
Dependent Claim
34 words
A method according to claim 2 wherein after said etching medium has been contacted with said supports in said preliminary etching zone it is thereafter brought in contact with a mass of copper particles.
Claim 5
Dependent Claim
16 words
A method according to claim 1 wherein the regeneration in step (f) is carried out electrolytically.
Claim 6
Independent Claim
221 words
A method for etching supports that have deposited thereon an etchable metal with an etching medium that includes an oxidizing agent, said method including (a) providing a first etching zone, (b) conveying said supports through said first etching zone, (c) spraying said supports with said etching medium containing an amount of oxidizing agent that is stoichiometrically in excess of that necessary to effect removal of the desired amount of said metal from said supports as they move through said first etching zone, (d) withdrawing residual etching medium from said first etching zone to a first reservoir, (e) bringing residual etching medium from said first reservoir into contact with a quantity of metal that will completely consume all of the oxidizing agent in said residual etching medium, (f) thereafter regenerating the treated etching medium resulting from step (e), (g) removing the regenerated etching medium from step (f) and introducing it into the process so that it is available for etching metal from said supports, (h) introducing an oxidizing agent into the etching medium being sprayed in accordance with step (c), the amount being stoichiometrically in excess of that necessary to effect removal of said metal from said supports conveyed to said first etching zone and (i) introducing the etching medium resulting from step (h) as a spray into said first etching zone.
Claim 7
Independent Claim
221 words
A method for etching supports that have deposited thereon an etchable metal with an etching medium that includes an oxidizing agent, said method including (a) providing a first etching zone, (b) conveying said supports through said first etching zone, (c) spraying said supports with said etching medium containing an amount of oxidizing agent that is stoichiometrically in excess of that necessary to effect removal of the desired amount of said metal from said supports as they move through said first etching zone, (d) withdrawing residual etching medium from said first etching zone to a first reservoir, (e) bringing residual etching medium from said first reservoir into contact with a quantity of metal that will completely consume all of the oxidizing agent in said residual etching medium, (f) thereafter regenerating the treated etching medium resulting from step (e), (g) removing the regenerated etching medium from step (f) and introducing it into the process so that it is available for etching metal from said supports, (h) introducing an oxidizing agent into the etching medium being sprayed in accordance with step (c), the amount being stoichiometrically in excess of that necessary to effect removal of said metal from said supports conveyed to said first etching zone and (i) introducing the etching medium resulting from step (h) as a spray into said first etching zone.
Claim 8
Dependent Claim
48 words
A method according to claim 5 wherein step (e) comprises providing a preliminary etching zone in advance of said first etching zone and bringing said residual etching medium set forth in step (e) into contact with the supports set forth in step (b) in said preliminary etching zone.
Claim 9
Dependent Claim
34 words
A method according to claim 6 wherein after said etching medium has been contacted with said supports in said preliminary etching zone it is thereafter brought in contact with a mass of etchable metal.
Claim 10
Dependent Claim
24 words
A. method according to claim 7 wherein said metal in said mass of etchable metal is the same metal that is on said supports.
Claim 11
Dependent Claim
12 words
A method according to claim 5 wherein said oxidizing agent is ozone.
Claim 12
Dependent Claim
16 words
A method according to claim 5 wherein the regeneration in step (f) is carried out electrolytically.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-09-20 | 1992-03-21 | 1992-09-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-09-20 | 1996-03-21 | 1996-09-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-09-20 | 2000-03-21 | 2000-09-20 | $7700.00 | Window Closed / Lapsed |