Particle trigger and delay generation system

Claim 2

Apparatus for measuring the electrical waveform generated by an atomic or subatomic particle incident on an electronic device, comprising: means for detecting the approach of the particle directed to strike the device a predetermined distance before the device; means for sampling a point on the said waveform after a time interval following detection of the approach of the particle by the means for detecting; and means for moving the sampling point timewise along the said waveform during succeeding particle incidences so that the means for sampling measures the entirety of the said waveform.

Claim 3

Apparatus according to claim 1, wherein the means for moving the sampling point comprises means for varying the time of the occurrence of the said waveform during succeeding particle incidences.

Claim 4

Apparatus according to claim 1, wherein the means for moving the sampling point comprises means for varying the time of the occurrence of the said waveform during succeeding particle incidences by varying the said determined distance before the device.

Claim 5

Apparatus according to claim 1, wherein the means for moving the sampling point comprises means for varying the time of sampling a point on the said waveform by the means for sampling during succeeding particle incidences.

Claim 6

Apparatus according to claim 1, wherein the means for moving the sampling point comprises means for varying the time of sampling a point on the said waveform by the means for sampling during succeeding particle incidences by varying the time interval following detection of the approach of the particle while sampling a point on the said waveform.

Claim 7

Apparatus for measuring the electrical waveform generated by an atomic or subatomic particle incident on an electronic device, comprising: a layer of insulating material having a region of sufficient thinness so as to allow passage of the particle therethrough to the device without substantial effect on the path or energy of the particle; a first layer of conductive material disposed on one face of the insulating layer and having a first means for providing passage therethrough of the particle which is aligned with the thin region of the insulating layer and the device; a second layer of conductive material disposed on the other face of the insulating layer and having a second means for providing passage therethrough of the particle which is aligned with the first means for providing passage, the thin region of the insulating layer and the device, said second conductive layer being a predetermined distance from the device; means for applying a voltage bias across the first conductive layer and the second conductive layer so that passage of the particle through the first means for providing passage, the thin region and the second means for providing passage changes the voltage across the first conductive layer and the second conductive layer so as to indicate the approach of the particle directed to strike the device a predetermined distance before the device; means for sampling a point on the said waveform after a time interval following detection of the approach of the particle; and means for moving the sampling point timewise along the said waveform during succeeding particle incidences so that the means for sampling measures the entirety of the said waveform.

Claim 8

Apparatus for measuring the electrical waveform generated by an atomic or subatomic particle incident on an electronic device, comprising: a layer of insulating material having a region of sufficient thinness so as to allow passage of the particle therethrough to the device without substantial effect on the path or energy of the particle; a first layer of conductive material disposed on one face of the insulating layer and having a first means for providing passage therethrough of the particle which is aligned with the thin region of the insulating layer and the device; a second layer of conductive material disposed on the other face of the insulating layer and having a second means for providing passage therethrough of the particle which is aligned with the first means for providing passage, the thin region of the insulating layer and the device, said second conductive layer being a predetermined distance from the device; means for applying a voltage bias across the first conductive layer and the second conductive layer so that passage of the particle through the first means for providing passage, the thin region and the second means for providing passage changes the voltage across the first conductive layer and the second conductive layer so as to indicate the approach of the particle directed to strike the device a predetermined distance before the device; means for sampling a point on the said waveform after a time interval following detection of the approach of the particle; and means for moving the sampling point timewise along the said waveform during succeeding particle incidences so that the means for sampling measures the entirety of the said waveform.

Claim 9

Apparatus according to claim 6, wherein the means for moving the sampling point comprises means for varying the time of the occurrence of the said waveform during succeeding particle incidences.

Claim 10

Apparatus according to claim 6, wherein the means for moving the sampling point comprises means for varying the time of the occurrence of the said waveform during succeeding particle incidences by varying the distance between the second conductive layer and the device.

Claim 11

Apparatus according to claim 6, wherein the means for moving the sampling point comprises means for varying the time of sampling a point on the said waveform by the means for sampling during succeeding particle incidences.

Claim 12

Apparatus according to claim 6, wherein the means for moving the sampling point comprises means for varying the time of sampling a point on the said waveform by the means for sampling during succeeding particle incidences by varying the time interval following detection of the approach of the particle via the voltage change between the first conductive layer and the second conductive layer while sampling a point on the said waveform.

Claim 13

Apparatus according to claim 6, wherein the means for moving the sampling point comprises means for varying the time of sampling a point on the said waveform by the means for sampling during succeeding particle incidences by applying an adjustable voltage bias across the first conductive layer and the second conductive layer so that the voltage change caused by the particle passage can be variably changed during succeeding particle incidences.

Claim 14

Apparatus for measuring the electrical waveform generated by an atomic or subatomic particle incident on an electronic device, comprising: a strip of superconducting material having a a depth of sufficient thinness so as to allow passage of the particle therethrough to the device without substantial effect on the path or energy of the particle, said strip being a predetermined distance from the device; means for introducing a current into the strip of superconducting material so that passage of the particle through the strip changes the voltage across the depth of the strip so as to indicate the approach of the particle directed to strike the device a a predetermined distance before the device; means for sampling a point on the said waveform after a time interval following detection of the approach of the particle; means for moving the sampling point timewise along the said waveform during succeeding particle incidences so that the means for sampling measures the entirety of the said waveform.

Claim 15

Apparatus for measuring the electrical waveform generated by an atomic or subatomic particle incident on an electronic device, comprising: a strip of superconducting material having a a depth of sufficient thinness so as to allow passage of the particle therethrough to the device without substantial effect on the path or energy of the particle, said strip being a predetermined distance from the device; means for introducing a current into the strip of superconducting material so that passage of the particle through the strip changes the voltage across the depth of the strip so as to indicate the approach of the particle directed to strike the device a a predetermined distance before the device; means for sampling a point on the said waveform after a time interval following detection of the approach of the particle; means for moving the sampling point timewise along the said waveform during succeeding particle incidences so that the means for sampling measures the entirety of the said waveform.

Claim 16

Apparatus according to claim 12, wherein the means for moving the sampling point comprises means for varying the time of the occurrence of the said waveform during succeeding particle incidences.

Claim 17

Apparatus according to claim 12, wherein the means for moving the sampling point comprises means for varying the time of the occurrence of the said waveform during succeeding particle incidences by varying the distance between the strip of superconducting material and the device.

Claim 18

Apparatus according to claim 12, wherein the means for moving the sampling point comprises means for varying the time of sampling of a point on the said waveform by the means for sampling during succeeding particle incidences.

Claim 19

Apparatus according to claim 12, wherein the means for moving the sampling point comprises means for varying the time of sampling of a point on the said waveform by the means for sampling during succeeding particle incidences by varying the first time interval following detection of the approach of the particle by the voltage change across the depth of the strip while sampling a point on the said waveform.

Claim 20

Apparatus according to claim 12, wherein the means for moving the sampling point comprises means for varying the time of sampling of a point on the said waveform by the means for sampling during succeeding particle incidences by applying an adjustable voltage bias across the depth of the strip so that the voltage change caused by the particle passage can be variably changed during succeeding particle incidences.

Claim 23

The method according to claim 18, further comprising prior to step (c) the steps of: (e) repeating steps (a) and (b) a desired number of times during succeeding particle incidences; and (f) averaging the measurements for each discrete point obtained during repetitions of step (b).