US4782029A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of gettering semiconductor wafers with an excimer laser beam
Assignee: NEC Electronics Corp
•
Filing: 1987-06-30
•
Granted: 1988-11-01
•
Expires: 2007-06-30
Abstract
Abstract A gettering method has a step in which the back surface of a semiconductor substrate having the upper surface on which semiconductor device elements is to be formed, with a laser beam having a wavelength of 150 to 400 nm to introduce strain fields onto the back surface of the substrate. The energy density of the laser beam is from 0.5 to 10 J/cm 2 , and the irradiation pitch of the laser is 40 to 1500 μm. The laser irradiation may be effected under the condition where an oxide film or a nitride film is formed on the back surface of the semiconductor substrate, or after the back surface of the semiconductor substrate is blasted with fine particles of silica or the like.
Inventors
- 👤 Kazumi Takemura
- 👤 Fumitoshi Toyokawa
- 👤 Masao Mikami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:28
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H10P36/00; H10P36/03; H10P52/00
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
84 words
A gettering method comprising the steps of: irradiating the back surface of a semicondutor wafer with an excimer laser beam having a wavelength of 150 to 400 nm and an energy density of 0.5 to 10 J/cm 2 by scanning said back surface with a belt-like spot of said laser beam with an irradiation pitch of 40 to 1500 um; and thereafter performing a heat treatment of said semiconductor wafer for trapping contaminants of heavy metals in said semiconductor wafer at the back surface.
Claim 2
Dependent Claim
84 words
A gettering method comprising the steps of: irradiating the back surface of a semicondutor wafer with an excimer laser beam having a wavelength of 150 to 400 nm and an energy density of 0.5 to 10 J/cm 2 by scanning said back surface with a belt-like spot of said laser beam with an irradiation pitch of 40 to 1500 um; and thereafter performing a heat treatment of said semiconductor wafer for trapping contaminants of heavy metals in said semiconductor wafer at the back surface.
Claim 3
Dependent Claim
43 words
The gettering method as claimed in claim 1, further comprising the step of coating said back surface of said semiconductor wafer with at least one of a silicon oxide film and a silicon nitride fill before said step of irradiating the back surface.
Claim 4
Dependent Claim
36 words
The gettering method as claimed in claim 1, further comprising the step of blasting said back surface of said semiconductor wafer with fine particles of silica or alumina before said step of irradiating the back surface.
Claim 5
Independent Claim
127 words
A method of maufacturing semiconductor devices comprising: a step of gettering contaminants of heavy metals in a semiconductor substrate at a back surface of said semiconductor substrate, said gettering step including irradiation of said back surface with an excimer laser beam having a wavelength of 150 to 400 nm and an energy density of 0.5 to 10 J/cm 2 to form strain fields in said back surface by repeatedly scanning said back surface in the form of belts with the pulse beam of the excimer laser with an irradiation pitch of 40 to 1500 um, said gettering step further including heat-treatment of said semiconductor substrate after said strain fields are formed; and a step of forming circuit elements in an upper surface region of said semiconductor substrate.
Claim 6
Independent Claim
127 words
A method of maufacturing semiconductor devices comprising: a step of gettering contaminants of heavy metals in a semiconductor substrate at a back surface of said semiconductor substrate, said gettering step including irradiation of said back surface with an excimer laser beam having a wavelength of 150 to 400 nm and an energy density of 0.5 to 10 J/cm 2 to form strain fields in said back surface by repeatedly scanning said back surface in the form of belts with the pulse beam of the excimer laser with an irradiation pitch of 40 to 1500 um, said gettering step further including heat-treatment of said semiconductor substrate after said strain fields are formed; and a step of forming circuit elements in an upper surface region of said semiconductor substrate.
Claim 7
Dependent Claim
24 words
The method of manufacturing semiconductor devices as claimed in claim 4, wherein said step of forming circuit elements is effected before said gettering step.
Claim 8
Dependent Claim
23 words
The method of manufacturing semiconductor devices as claimed in claim 4, wherein said heat treatment is effected by thermally oxidizing said semiconductor substrate.
References Cited (Backward Citations)
US4131487A
Cited
US4319119A
Cited
US4370175A
Cited
US4415373A
Cited
US4539050A
Cited
US4668304A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-11-01 | 1992-05-02 | 1992-11-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-11-01 | 1996-05-02 | 1996-11-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-11-01 | 2000-05-02 | 2000-11-01 | $7700.00 | Window Closed / Lapsed |