US4785344A
Expired / Lapsed
US
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Semi-conductor component with contact hole
Assignee: Siemens AG
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Filing: 1985-01-18
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Granted: 1988-11-15
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Expires: 2005-01-18
Abstract
Abstract In power MOSFETs the source zone (5) and the channel zone (4) must be contacted by a common contact (15). If the contact material is aluminum and if the channel zone (4) is n-conductive (p-channel MOSFET), a surface region (8) of the channel zone (4) is additionally n-doped through an opening (6) in the source zone (5) thereabove with a dose of ≧5×10 14 atoms cm -2 . The aluminum contact (15) contacts the channel zone (4) at this region (8) thereby forming a purely ohmic contact to the channel zone.
Inventors
- 👤 Guenther Franz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 06:57
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D62/00; H10D62/10; H10D62/17; H10D62/393; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/20; H10D64/23; H10D64/251; H10D64/252; H10D64/2527; H10D64/256
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
147 words
A semiconductor component comprising: a P-conductive semiconductor body having a first surface; an N-conductive first zone embedded in said first surface of said semiconductor body and being of higher conductivity than said semiconductor body; a P-conductive second zone embedded in said first zone; an oxide layer on said first surface of said semiconductor body and having a first opening therein, said opening exposing a part of a surface of said second zone; said second zone having a second opening therein providing an exposed surface area of said first zone beneath said second opening; an N-conductive layer having an implantation dose of at least 5×10 (EXP14) CM EXP (-2) embedded in said exposed surface area of said first zone, thereby providing a layer having a higher conductivity than said first zone; and an aluminum contact electrically connecting the exposed surface of said second zone and said N-conductive layer.
Claim 2
Dependent Claim
147 words
A semiconductor component comprising: a P-conductive semiconductor body having a first surface; an N-conductive first zone embedded in said first surface of said semiconductor body and being of higher conductivity than said semiconductor body; a P-conductive second zone embedded in said first zone; an oxide layer on said first surface of said semiconductor body and having a first opening therein, said opening exposing a part of a surface of said second zone; said second zone having a second opening therein providing an exposed surface area of said first zone beneath said second opening; an N-conductive layer having an implantation dose of at least 5×10 (EXP14) CM EXP (-2) embedded in said exposed surface area of said first zone, thereby providing a layer having a higher conductivity than said first zone; and an aluminum contact electrically connecting the exposed surface of said second zone and said N-conductive layer.
Claim 3
Dependent Claim
16 words
The semiconductor component defined in claim 1, wherein said n-conductive layer is approximately 0.1 microns thick.
Claim 4
Dependent Claim
27 words
The semiconductor component defined in claim 1, wherein said n-conductive layer is located on the surface of a depression provided in said first zone beneath said opening.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-11-15 | 1992-05-16 | 1992-11-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-11-15 | 1996-05-16 | 1996-11-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-11-15 | 2000-05-16 | 2000-11-15 | $7700.00 | Window Closed / Lapsed |