US4789427A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for removing resist from semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1987-05-19
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Granted: 1988-12-06
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Expires: 2007-05-19
Abstract
Abstract A method for removing a resist on a layer formed on a semiconductor substrate includes the steps of removing a portion of the resist by plasma processing and removing the remaining resist by a chemical process. This method prevents the entry of heavy metal particles contained in the resist into the semiconductor substrate, so that a functional region formed in the semiconductor substrate is not contaminated by the heavy metal particles. As a result, destruction of the functional elements formed in the functional region is prevented, and thus the minority carrier generation lifetime in the device is not reduced.
Inventors
- 👤 Shuzo Fujimura
- 👤 Yoshikazu Kato
- 👤 Syouzi Mochizuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 05:20
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/42; G03F7/427; H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; G03F7/422; H10P50/286; H10P50/287; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
54 words
A method for removing a resist of a semiconductor device, comprising the steps of: removing said resist on a layer formed on a semiconductor substrate having a functional region, in a direction of the thickness thereof by a predetermined thickness by applying plasma processing; and removing the remaining resist by applying a chemical process.
Claim 2
Independent Claim
54 words
A method for removing a resist of a semiconductor device, comprising the steps of: removing said resist on a layer formed on a semiconductor substrate having a functional region, in a direction of the thickness thereof by a predetermined thickness by applying plasma processing; and removing the remaining resist by applying a chemical process.
Claim 3
Dependent Claim
29 words
A method as set forth in claim 1, wherein said chemical process comprises a process using an electrically neutral gas which will cause a chemical removal of said resist.
Claim 4
Dependent Claim
27 words
A method as set forth in claim 1, wherein said chemical process comprises a process using a solution including an acid, an alkali or an organic solvent.
Claim 5
Dependent Claim
45 words
A method as set forth in claim 1, wherein said layer comprises a silicon dioxide insulation layer having a thickness of approximately 20 nm or less, and wherein the thickness of said remaining resist after the removal by said plasma processing is approximately 100 nm.
Claim 6
Dependent Claim
35 words
A method as set forth in claim 1, wherein said layer comprises a polysilicon conduction layer, and wherein the thickness of said remaining resist after the removal by said plasma processing is approximately 100 nm.
References Cited (Backward Citations)
US3881242A
Cited
US4028155A
Cited
US3920483A
Cited
US4279671A
Cited
EP0040081A2
Cited
US4477310A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-12-06 | 1992-06-06 | 1992-12-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-12-06 | 1996-06-06 | 1996-12-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-12-06 | 2000-06-06 | 2000-12-06 | $7700.00 | Window Closed / Lapsed |