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US4789796A Expired / Lapsed US ⏱️ 0.0 years remaining

Output buffer having sequentially-switched output

Assignee: NXP BV
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Filing: 1986-12-08
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Granted: 1988-12-06
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Expires: 2006-12-08
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Abstract

Abstract An integrated semiconductor circuit includes an output stage and a control circuit. The output stage comprises several (e.g. four) pull-down output transistors, which are sequentially switched on for pulling down the output node, whereby four small current steps are made instead of one high current step. As a result the package inductance generated power supply line noise will be substantially reduced (by at least a factor four). The same technique can be used for limiting the supply line noise due to the charge current for charging the output node via pull-up transistors.

Inventors

  • 👤 Richard C. Foss

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 20:12
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/02; H03K19/08; H03K19/094; H03K19/01; H03K19/017; H03K19/01707; H03K19/01721; H03K19/003; H03K19/00346; H03K19/00361; H03K4/00; H03K4/02; H03K4/023

Claims Analysis

Total Claims: 15
Claim 1
Independent Claim 142 words
An integrated semiconductor circuit comprising a control circuit, an output stage, an input and an output, the output stage comprising pull-up means connected between a first supply terminal and the output and pull-down means connected between a second supply terminal and the output, said control circuit controlling at least one of said pull-up and pull-down means for limiting the time rate of change of current at the output upon receiving an input signal change at the input, at least one of said pull-up and pull-down means comprising at least two semiconductor devices each having a control electrode and first and second main electrodes, the semiconductor devices being connected in parallel except for their control electrodes, said control electrodes receiving control signals from the control circuit for sequentially changing the state of said semiconductor devices upon receiving a change of the input signal.
Claim 2
Dependent Claim 142 words
An integrated semiconductor circuit comprising a control circuit, an output stage, an input and an output, the output stage comprising pull-up means connected between a first supply terminal and the output and pull-down means connected between a second supply terminal and the output, said control circuit controlling at least one of said pull-up and pull-down means for limiting the time rate of change of current at the output upon receiving an input signal change at the input, at least one of said pull-up and pull-down means comprising at least two semiconductor devices each having a control electrode and first and second main electrodes, the semiconductor devices being connected in parallel except for their control electrodes, said control electrodes receiving control signals from the control circuit for sequentially changing the state of said semiconductor devices upon receiving a change of the input signal.
Claim 3
Dependent Claim 35 words
An integrated semiconductor circuit as claimed in claim 1, characterized in that the control circuit comprises delay means for generating a delayed control signal, and a further semiconductor device for receiving said delayed control signal.
Claim 4
Dependent Claim 22 words
An integrated semiconductor circuit as claimed in claim 2, characterized in that the delay means comprises first and second inverters in series.
Claim 5
Dependent Claim 34 words
An integrated semiconductor circuit as claimed in claim 1, 2 or 3, characterized in that the number of devices of the pull-up means is smaller than the number of devices of the pull-down means.
Claim 6
Dependent Claim 104 words
An integrated semiconductor circuit as claimed in claim 3, characterized in that the delay means further comprises at least third and fourth inverters, and said first inverter has an input for receiving the first control signal and an output for generating an intermediate control signal, which has a slow rising or falling slope with respect to a falling or rising slope of the first control signal, the third and fourth inverters each having an input for receiving the intermediate control signal and an output for generating further control signals for the semiconductor devices, said third and fourth inverters each having a different transition voltage.
Claim 7
Dependent Claim 24 words
An integrated semiconductor circuit as claimed in claim 5, characterized in that the output of the first inverter is provided with a capacitive load.
Claim 8
Dependent Claim 61 words
An integrated semiconductor circuit as claimed in claim 1, 2 or 3, comprising a NOR gate and characterized in that the control circuit has a data input and an enable input, which each are connected to inputs of said NOR gate, at the output of which a first control signal is generated, the enable input receiving an inverted output enable signal.
Claim 9
Dependent Claim 72 words
An integrated semiconductor circuit as claimed in claim 7, comprising a NAND gate, a fast inverter and a first pull-up device, characterized in that the data input is connected to a first input of said NAND gate and the enable input is connected to a second input of the NAND gate via said first inverter, the output of the NAND gate being connected to the gate electrode of said first pull-up device.
Claim 10
Dependent Claim 100 words
An integrated semiconductor circuit as claimed in claim 8, comprising a slow inverter, a second NAND gate and a second pull-up device, characterized in that the enable input is connected via said slow inverter to a first input of said second NAND gate, a second input of the second NAND gate being connected to the data input and a third input of the second NAND gate being connected to the output of the first inverter for receiving the intermediate control signal, and an output of the second NAND gate being connected to the gate electrode of said second pull-up device.
Claim 11
Dependent Claim 54 words
An integrated semiconductor circuit as claimed in claim 7, characterized in that a discharge path is provided between the output of the first inverter and the second supply terminal, which discharge path comprises two discharge devices in series, the discharge devices being controlled by signals on the data input and on the enable input.
Claim 12
Dependent Claim 44 words
An integrated semiconductor circuit as claimed in claim 8, characterized in that the pull-up devices are PMOS transistors, the pull-down devices are NMOS transistors, all inverters comprise a PMOS and a NMOS transistor and the NOR and the first NAND gate are CMOS gates.
Claim 13
Dependent Claim 99 words
An integrated semiconductor circuit as claimed in claim 11, comprising two serially-connected NMOS transistors, characterized in that the second NAND gate comprises two PMOS transistors in parallel, connected in series with said two serially-connected NMOS transistors, of which a first and a second of said two PMOS transistors have their gate electrodes connected to the output of the slow inverter and to the data input, respectively, and of which the first and second of said two NMOS transistor have their gate electrodes connected to the output of the first inverter and to the output of the slow inverter, respectively.
Claim 14
Dependent Claim 55 words
An integrated semiconductor circuit as claimed in claim 11, characterized in that the discharge device controlled by signals on the data input in a PMOS transistor and the discharge device controlled by signals on the enable input is an NMOS transistor, the gate electrode of which is connected to the output of the fast inverter.
Claim 15
Dependent Claim 45 words
An integrated semiconductor circuit as claimed in claim 11, characterized in that the capacitive load is a MOS transistor of which the gate electrode is connected to the output of the first inverter and the main electrodes are connected to one of the supply terminals.

References Cited (Backward Citations)

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US4472643A Cited
GB2119193A Cited
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JPH104831A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1991-12-06 1992-06-06 1992-12-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1995-12-06 1996-06-06 1996-12-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1999-12-06 2000-06-06 2000-12-06 $7700.00 Window Closed / Lapsed

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