US4794569A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor memory having a barrier transistor between a bit line and a sensing amplifier
Assignee: Toshiba Corp
•
Filing: 1986-05-14
•
Granted: 1988-12-27
•
Expires: 2006-05-14
Abstract
Abstract In this invention, in a sensing circuit of a dynamic memory, barrier transistors are provided between the bit lines and the sensing amplifier. A circuit is provided that, on sensing and on data transfer, changes the gate potential of the barrier transistors so that during the sensing operation the barrier transistors are temporarily turned OFF, so that sensing can be carried out with high sensitivity, as the sensing system is not affected by the parasitic capacitance of the bit lines, while, on data transfer to the input/output lines, the gate potential of the barrier transistors is raised to a level greater than a value reached by adding the threshold value of the MOS transistors to the power source voltage, so that the conductance of the barrier transistors is increased, thereby speeding up the presensing of the input/output lines in the sensing circuit.
Inventors
- 👤 Hiroshi Sahara
- 👤 Haruki Toda
- 👤 Shigeo Ohshima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 06:14
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/4063; G11C11/407; G11C11/409; G11C11/4096; G11C11/4094
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
90 words
Semiconductor memory supplied with a power source voltage and an earth potential, comprising: a first MOS transistor connected between a bit line having a precharging level and a sensing circuit of a dynamic memory; means for lowering the gate potential of said MOS transistor to a level below the precharging level of said bit line during the sensing operation, and for raising said gate potential, on data transfer, to a level greater than a value reached by adding the threshold voltage of the MOS transistor to the power source voltage.
Claim 2
Dependent Claim
90 words
Semiconductor memory supplied with a power source voltage and an earth potential, comprising: a first MOS transistor connected between a bit line having a precharging level and a sensing circuit of a dynamic memory; means for lowering the gate potential of said MOS transistor to a level below the precharging level of said bit line during the sensing operation, and for raising said gate potential, on data transfer, to a level greater than a value reached by adding the threshold voltage of the MOS transistor to the power source voltage.
Claim 3
Dependent Claim
165 words
Semiconductor memory according to claim 1, further comprising: a second MOS transistor that connects a power source supplying said power source voltage and a first node constituting the gate input of said first MOS transistor; a third MOS transistor that connects a second node which is common to a pair of MOS transistors constituting a flip-flop of said sensing circuit and a third node connected through a capacitance with said first node; and a fourth MOS transistor that connects said third node and said power source; so that said third node discharges through said third MOS transistor on sensing operation, and on data transfer operation recharges through said fourth MOS transistor, whereby, due to the coupling with said capacitance, the potential of said first node falls to a level below the precharging potential of said bit line during sensing operation and during data transfer operation rises to a level reached by adding the threshold voltage of said first MOS transistor to the power source voltage.
Claim 4
Dependent Claim
149 words
Semiconductor memory according to claim 1, further comprising: a second MOS transistor that connects a power source supplying said power source voltage and a first node constituting the gate input of said first MOS transistor; a third MOS transistor that connects said earth potential and a second node connected through a capacitance with said first node; and a fourth MOS transistor that connects said second node and said power source; so that said second node discharges through said third MOS transistor on sensing operation, and on data transfer operation recharges through said fourth MOS transistor, whereby, due to the coupling with said capacitance, the potential of said first node falls to a level below the precharging potential of said bit line during sensing operation and during data transfer operation rises to a level reached by adding the threshold voltage of said first MOS transistor to the power source voltage.
Claim 5
Dependent Claim
93 words
Semiconductor memory supplied with a power source voltage and an earth potential, comprising: an MOS transistor connected between a bit line having a precharging level and a sensing circuit of a dynamic memory; and means for lowering the gate potential of said MOS transistor to a level below the precharging level of said bit line during a sensing operation, and for raising said gate potential, on data transfers, to a level greater than a value rached by adding the threshold voltage of the MOS transistor to the precharging level of the bit line.
Claim 6
Dependent Claim
93 words
Semiconductor memory supplied with a power source voltage and an earth potential, comprising: an MOS transistor connected between a bit line having a precharging level and a sensing circuit of a dynamic memory; and means for lowering the gate potential of said MOS transistor to a level below the precharging level of said bit line during a sensing operation, and for raising said gate potential, on data transfers, to a level greater than a value rached by adding the threshold voltage of the MOS transistor to the precharging level of the bit line.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-12-27 | 1992-06-27 | 1992-12-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-12-27 | 1996-06-27 | 1996-12-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-12-27 | 2000-06-27 | 2000-12-27 | $7700.00 | Window Closed / Lapsed |