← Back to Patent Explorer
US4804490A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of fabricating stabilized threshold switching material

Assignee: Energy Conversion Devices Inc
•
Filing: 1987-10-13
•
Granted: 1989-02-14
•
Expires: 2007-10-13
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A method of stabilizing the switching characteristics of a thin film chalcogenide glass material by subjecting said material to a hydrogenated atmosphere, preferably activated hydrogen and argon. It is also preferred to provide a post hydrogenation anneal step.

Inventors

  • 👤 Roger W. Pryor
  • 👤 Patrick J. Klersy
  • 👤 Jerry A. Piontkowski
  • 👤 Napolean P. Formigoni

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 04:37
CPC Classifications
H; H02; H02H; H02H9/00; H02H9/04; H02H9/044; H10; H10N; H10N70/00; H10N70/011; H10N70/021; H10N70/026; H10N70/041; H10N70/20; H10N70/801; H10N70/821; H10N70/826; H10N70/881; H10N70/882

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 83 words
A method of stabilizing the threshold switching characteristics of a thin film chalcogenide glass material, said method comprising the steps of: (a) providing a thin film chalcogenide glass material possessing threshold switching characteristics; (b) subjecting said chalcogenide glass material to a hydrogenated atmosphere for stabilizing the threshold switching characteristics thereof; and (c) controlling the temperature, pressure and energy levels during which the hydrogenation occurs so as to provide first, second and third independent controls upon the rate at which said stabilization process proceeds.
Claim 2
Independent Claim 83 words
A method of stabilizing the threshold switching characteristics of a thin film chalcogenide glass material, said method comprising the steps of: (a) providing a thin film chalcogenide glass material possessing threshold switching characteristics; (b) subjecting said chalcogenide glass material to a hydrogenated atmosphere for stabilizing the threshold switching characteristics thereof; and (c) controlling the temperature, pressure and energy levels during which the hydrogenation occurs so as to provide first, second and third independent controls upon the rate at which said stabilization process proceeds.
Claim 3
Dependent Claim 25 words
The method as recited in claim 1, including the further step of, subsequent to step (c), subjecting said chalcogenide glass material to a thermal anneal.
Claim 4
Dependent Claim 21 words
The method as recited in claim 1, wherein the thin film chalcogenide glass material comprises an amorphous chalcogenide glass semiconductor material.
Claim 5
Dependent Claim 26 words
The method as recited in claim 3, wherein the amorphous chalcogenide glass semiconductor material comprises Te 36 Ge 23 S 21 As 18 Se 2 .
Claim 6
Dependent Claim 21 words
The method as recited in claim 2, wherein hydrogen gas, (H 2 ), is the source of hydrogen in said atmosphere.
Claim 7
Dependent Claim 15 words
The method as recited in claim 5, wherein the hydrogen gas is diluted with argon.
Claim 8
Dependent Claim 23 words
The method as recited in claim 5, wherein said hydrogen gas is subjected to an energetic process so as to provide activated hydrogen.
Claim 9
Dependent Claim 20 words
The method as recited in claim 7, wherein said activated hydrogen is utilized to plasma anneal said chalcogenide glass material.
Claim 10
Dependent Claim 24 words
The method as recited in claim 7, wherein step (a) comprises fabricating, by reactive sputtering, said chalcogenide material in an atmosphere of activated hydrogen.
Claim 11
Dependent Claim 29 words
The method as recited in claim 9, including the further step of subjecting said chalcogenide glass material to a thermal anneal after completion of the hydrogenated reactive sputtering process.

References Cited (Backward Citations)

US4040917A Cited
SU679025A1 Cited
US4217374A Cited
JPS56125847A Cited
US4375125A Cited
JPS5956575A Cited
US4610731A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-02-14 1992-08-15 1993-02-14 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-02-14 1996-08-15 1997-02-14 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-02-14 2000-08-15 2001-02-14 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag