← Back to Patent Explorer
US4820657A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for altering characteristics of junction semiconductor devices

Assignee: Georgia Tech Research Corp
•
Filing: 1987-05-26
•
Granted: 1989-04-11
•
Expires: 2007-05-26
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract Method for altering an electrical characteristic of a circuit having at least one junction formed from a first and a second semiconductor material involves applying at least one pulse --a voltage pulse, a current pulse, an energy pulse, or a power pulse and so forth-- across the junction, the pulse having sufficient amplitude of one or more of its electrical parameters and time duration to alter the electrical characteristics of the junction, and thereby, the electrical characteristic of the circuit. The pulse is applied across the junction by applying it to at least one terminal or electrode which is contacted to the first or second semiconductor material. In addition, the amplitudes of the electrical parameters and time duration of the at least one pulse should be low enough to ensure that dendrites or filaments of material from the at least one electrode, for example, metal, are not formed in the first or second semiconductor material.

Inventors

  • 👤 David W. Hughes
  • 👤 Robert K. Feeney

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 05:46
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/80

Claims Analysis

Total Claims: 18
Claim 1
Independent Claim 134 words
A method for altering an electrical characteristic of a circuit having at least one junction formed from a first and a second semiconductor and having an electrode contacted to the first semiconductor and an electrode contacted to the second semiconductor, the method comprising the step of applying at least one electrical pulse across the junction, including applying the pulse to the electrodes, the pulse having sufficient amplitude of one or more of its electrical parameters and time duration to degrade the electrical transport characteristics of the junction, and, thereby, alter the electrical characteristic of the circuit, the amplitudes of the electrical parameters and the time duration of the at least one pulse being low enough so that dendrites or filaments of material from the electrodes are not formed in the first or second semiconductor.
Claim 2
Independent Claim 134 words
A method for altering an electrical characteristic of a circuit having at least one junction formed from a first and a second semiconductor and having an electrode contacted to the first semiconductor and an electrode contacted to the second semiconductor, the method comprising the step of applying at least one electrical pulse across the junction, including applying the pulse to the electrodes, the pulse having sufficient amplitude of one or more of its electrical parameters and time duration to degrade the electrical transport characteristics of the junction, and, thereby, alter the electrical characteristic of the circuit, the amplitudes of the electrical parameters and the time duration of the at least one pulse being low enough so that dendrites or filaments of material from the electrodes are not formed in the first or second semiconductor.
Claim 3
Dependent Claim 15 words
The method of claim 1 wherein the electrodes are comprised of at least one metal.
Claim 4
Dependent Claim 40 words
The method of claim 1 wherein the at least one pulse has an amplitude of one or more of its electrical parameters which substantially exceeds the amplitude of the normal operating condition of the corresponding electrical parameters for the junction.
Claim 5
Dependent Claim 30 words
The method of claim 1 wherein the at least one pulse reverse biases the junction and has a voltage amplitude which substantially exceeds the normal operating voltage of the junction.
Claim 6
Dependent Claim 29 words
The method of claim 4 wherein the at least one pulse has a voltage amplitude which is at least equal to a reverse bias breakdown voltage of the junction.
Claim 7
Dependent Claim 15 words
The method of claim 1 wherein the at least one pulse forward biases the junction.
Claim 8
Dependent Claim 17 words
The method of claim 3 wherein the at least one pulse is a substantially constant energy pulse.
Claim 9
Dependent Claim 15 words
The method of claim 1 wherein the at least one pulse is a current pulse.
Claim 10
Dependent Claim 28 words
The method of claim 1 wherein the first and second semiconductor is silicon, germanium, III-V compounds, III-V ternary alloys, III-V quaternary alloys, II-VI compounds, and II-VI ternary alloys.
Claim 11
Independent Claim 177 words
A method for altering an electrical characteristic of a circuit having at least one junction formed from a first and a second semiconductor and having an electrode contacted to the first semiconductor and an electrode contacted to the second semiconductor, the method comprising the steps of: (1) applying at least one electrical pulse across the junction, including applying the pulse to the electrodes, the pulse having sufficient amplitude of one or more of its electrical parameters and time duration to degrade the electrical transport characteristics of the junction, and, thereby, alter the electrical characteristic of the circuit, the amplitudes of the electrical parameters and the time duration of the at least one pulse being low enough so that dendrites or filaments of material from the electrodes are not formed in the first or second semiconductor; (2) measuring the value of the electrical characteristic of the circuit; (3) comparing the measured value with a predetermined value; and (4) repeating steps 1-3 until the difference between the measured value and the predetermined value is smaller than a predetermined amount.
Claim 12
Independent Claim 177 words
A method for altering an electrical characteristic of a circuit having at least one junction formed from a first and a second semiconductor and having an electrode contacted to the first semiconductor and an electrode contacted to the second semiconductor, the method comprising the steps of: (1) applying at least one electrical pulse across the junction, including applying the pulse to the electrodes, the pulse having sufficient amplitude of one or more of its electrical parameters and time duration to degrade the electrical transport characteristics of the junction, and, thereby, alter the electrical characteristic of the circuit, the amplitudes of the electrical parameters and the time duration of the at least one pulse being low enough so that dendrites or filaments of material from the electrodes are not formed in the first or second semiconductor; (2) measuring the value of the electrical characteristic of the circuit; (3) comparing the measured value with a predetermined value; and (4) repeating steps 1-3 until the difference between the measured value and the predetermined value is smaller than a predetermined amount.
Claim 13
Independent Claim 188 words
A method for altering an electrical characteristic of a circuit having at least one junction formed from a first and a second semiconductor and having an electrode contacted to the first semiconductor and an electrode contacted to the second semiconductor, the method comprising the steps of: (1) measuring the value of the electrical characteristic of the circuit; (2) comparing the measured value with a predetermined value and terminating the method if the difference between the measured value and the predetermined value is smaller than a predetermined amount, otherwise, continuing on to step 3; (3) applying at least one electrical pulse across the junction, including applying the pulse to the electrodes, the pulse having sufficient amplitude of one or more of its electrical parameters and time duration to degrade the electrical transport characteristics of the junction, and, thereby, alter the electrical characteristic of the circuit, the amplitudes of the electrical parameters and the time duration of the at least one pulse being low enough so that dendrites or filaments of material from the electrodes are not formed in the first or second semiconductor, and (4) returning to step 1.
Claim 14
Independent Claim 188 words
A method for altering an electrical characteristic of a circuit having at least one junction formed from a first and a second semiconductor and having an electrode contacted to the first semiconductor and an electrode contacted to the second semiconductor, the method comprising the steps of: (1) measuring the value of the electrical characteristic of the circuit; (2) comparing the measured value with a predetermined value and terminating the method if the difference between the measured value and the predetermined value is smaller than a predetermined amount, otherwise, continuing on to step 3; (3) applying at least one electrical pulse across the junction, including applying the pulse to the electrodes, the pulse having sufficient amplitude of one or more of its electrical parameters and time duration to degrade the electrical transport characteristics of the junction, and, thereby, alter the electrical characteristic of the circuit, the amplitudes of the electrical parameters and the time duration of the at least one pulse being low enough so that dendrites or filaments of material from the electrodes are not formed in the first or second semiconductor, and (4) returning to step 1.
Claim 15
Independent Claim 195 words
A method for matching an electrical characteristic of a circuit with that of another like circuit, each circuit having at least one junction formed from a first and a second semiconductor and having an electrode contacted to the first semiconductor and an electrode contacted to the second semiconductor, the method comprising the steps of: (1) measuring the electrical characteristic of both circuits, (2) applying at least one electrical pulse across the junction of one of the circuits, including applying the pulse to the electrodes, the pulse having sufficient amplitude of one or more of its electrical parameters and time duration to degrade the electrical transport characteristics of the junction, and, thereby, alter the electrical characteristic of the circuit, the amplitudes of the electrical parameters and the time duration of the at least one pulse being low enough so that dendrites or filaments of material from the electrodes are not formed in the first or second semiconductor, (3) measuring the electrical characteristic of the altered circuit, (4) comparing the measured values of the electrical characteristic, and (5) repeating steps 2-4 until the difference between the electrical characteristics of both circuits is smaller than a predetermined amount.
Claim 16
Independent Claim 195 words
A method for matching an electrical characteristic of a circuit with that of another like circuit, each circuit having at least one junction formed from a first and a second semiconductor and having an electrode contacted to the first semiconductor and an electrode contacted to the second semiconductor, the method comprising the steps of: (1) measuring the electrical characteristic of both circuits, (2) applying at least one electrical pulse across the junction of one of the circuits, including applying the pulse to the electrodes, the pulse having sufficient amplitude of one or more of its electrical parameters and time duration to degrade the electrical transport characteristics of the junction, and, thereby, alter the electrical characteristic of the circuit, the amplitudes of the electrical parameters and the time duration of the at least one pulse being low enough so that dendrites or filaments of material from the electrodes are not formed in the first or second semiconductor, (3) measuring the electrical characteristic of the altered circuit, (4) comparing the measured values of the electrical characteristic, and (5) repeating steps 2-4 until the difference between the electrical characteristics of both circuits is smaller than a predetermined amount.
Claim 17
Independent Claim 204 words
A method for matching an electrical characteristic of a circuit with that of another like circuit, each circuit having at least one junction formed from a first and a second semiconductor and having an electrode contacted to the first semiconductor and an electrode contacted to the second semiconductor, the method comprising the steps of: (1) applying at least one electrical pulse across the junction of one of the circuits, including applying the pulse to the electrodes, the pulse having sufficient amplitude of one or more of its electrical parameters and time duration to degrade the electrical transport characteristics of the junction, and, thereby, alter the electrical characteristic of the circuit, the amplitudes of the electrical parameters and the time duration of the at least one pulse being low enough so that dendrites or filaments of material from the electrodes are not formed in the first or second semiconductor, (2) measuring the electrical characteristic of both circuits, (3) comparing the measured values of the electrical characteristic, and (4) repeating steps 1-3, where step 2 hereafter only requires measurement of the electric characteristic of the circuit which is being altered, until the difference between the electrical characteristic of both circuits is smaller than a predetermined amount.
Claim 18
Independent Claim 204 words
A method for matching an electrical characteristic of a circuit with that of another like circuit, each circuit having at least one junction formed from a first and a second semiconductor and having an electrode contacted to the first semiconductor and an electrode contacted to the second semiconductor, the method comprising the steps of: (1) applying at least one electrical pulse across the junction of one of the circuits, including applying the pulse to the electrodes, the pulse having sufficient amplitude of one or more of its electrical parameters and time duration to degrade the electrical transport characteristics of the junction, and, thereby, alter the electrical characteristic of the circuit, the amplitudes of the electrical parameters and the time duration of the at least one pulse being low enough so that dendrites or filaments of material from the electrodes are not formed in the first or second semiconductor, (2) measuring the electrical characteristic of both circuits, (3) comparing the measured values of the electrical characteristic, and (4) repeating steps 1-3, where step 2 hereafter only requires measurement of the electric characteristic of the circuit which is being altered, until the difference between the electrical characteristic of both circuits is smaller than a predetermined amount.

References Cited (Backward Citations)

US2875506A Cited
US2916408A Cited
US3333326A Cited
US3355334A Cited
US3576549A Cited
JPS54144878A Cited
JPS558820A Cited
JPS5946418A Cited
US4534100A Cited
JPS5922337A Cited
US4646427A Cited
US4606781A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-04-10 1992-10-10 1993-04-11 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-04-10 1996-10-10 1997-04-11 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-04-10 2000-10-10 2001-04-11 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag