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US4821091A
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Polysilicon photoconductor for integrated circuits
Assignee: United States Department of Energy
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Filing: 1988-01-21
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Granted: 1989-04-11
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Expires: 2008-01-21
Abstract
Abstract A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.
Inventors
- 👤 Robert B. Hammond
- 👤 Douglas R. Bowman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:22
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/121; H10F30/00; H10F30/10; H10F39/00; H10F39/10; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/164; H10F77/1642; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/546; Y02E10/547; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
143 words
A photoconductive element comprising: a bulk silicon substrate having a defined surface area of silicon dioxide; a layer of polycrystalline silicon serving as a photosensing element insulatively separated from said bulk silicon by said silicon dioxide; and electrically conductive means contacting said polycrystalline silicon and defining an optical access gap above said polycrystalline silicon layer; where said polycrystalline silicon layer is (1) subjected to an anneal which is effective to increase output current of the photoconductive element, said anneal being carried out at a temperature in the range of from about 1000° to about 1200° C. for a time period of about one hour, and (2), following said anneal, is subjected to ion implantation which is effective to adjust response time of the photoconductive element, said response time being proportional to the damage caused to the polycrystalline silicon layer by said ion implantation.
Claim 2
Dependent Claim
143 words
A photoconductive element comprising: a bulk silicon substrate having a defined surface area of silicon dioxide; a layer of polycrystalline silicon serving as a photosensing element insulatively separated from said bulk silicon by said silicon dioxide; and electrically conductive means contacting said polycrystalline silicon and defining an optical access gap above said polycrystalline silicon layer; where said polycrystalline silicon layer is (1) subjected to an anneal which is effective to increase output current of the photoconductive element, said anneal being carried out at a temperature in the range of from about 1000° to about 1200° C. for a time period of about one hour, and (2), following said anneal, is subjected to ion implantation which is effective to adjust response time of the photoconductive element, said response time being proportional to the damage caused to the polycrystalline silicon layer by said ion implantation.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-04-10 | 1992-10-10 | 1993-04-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-04-10 | 1996-10-10 | 1997-04-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-04-10 | 2000-10-10 | 2001-04-11 | $7700.00 | Window Closed / Lapsed |