Microwave device

Claim 2

A microwave device consisting essentially of a substrate consisting of a material selected from the group consisting of Al 2 O 3 , SiO 2 and porcelain, and a thin layer deposited on said substrate and having a thickness of from 20 to 500 Angstrom units, said thin layer consisting of fine metal particles wherein each deposited fine metal particle contacts adjacent deposited fine metal particles, said fine metal particles being of a uniform size of not greater than 0.1 μm in diameter, said fine metal particles being deposited so that the positional relationships between each fine metal particle and its respectively adjacent fine metal particles are substantially uniform with respect to any of said fine metal particles and the contacts between adjacent fine metal particles are substantially uniform point-to-point contacts throughout said microwave device, said fine metal particles being selected from the group consisting of pt and alloys thereof, Nb-Zr, Nb-Ta, Nb-Ti, Pb-Bi, Mo-Tc, Ta-Ti, Nb 3 Sn, Nb 3 Al, Nb 3 Ge, Nb 3 Au, Nb 3 Pt, Ta 3 Sn and V 3 Si.

Claim 3

A microwave device as claimed in claim 1, wherein said fine metal particles are selected from the group consisting of platinum and alloys of platinum.

Claim 4

A microwave device as claimed in claim 1, wherein said fine metal particles consist of a material selected from the group consisting of Nb-Zr, Nb-Ta, Nb-Ti, Pb-Bi, Mo-Tc, Ta-Ti, Nb 3 Sn, Nb 3 Al, Nb 3 Ge, Nb 3 Au, Nb 3 Pt, Ta 3 Sn and V 3 Si.

Claim 5

A microwave device as claimed in claim 1, wherein said substrate is made of silica.

Claim 6

A microwave device as claimed in claim 4, wherein said fine metal particles are selected from the group consisting of platinum and alloys of platinum.

Claim 7

A microwave device as claimed in claim 4, wherein said fine metal particles consist of a material selected from the group consisting of Nb-Zr, Nb-Ta, Nb-Ti, Pb-Bi, Mo-Tc, Ta-Ti, Nb 3 Sn, Nb 3 Al, Nb 3 Ge, Nb 3 Au, Nb 3 Pt, Ta 3 Sn and V 3 Si.

Claim 8

A microwave device as claimed in claim 1, wherein said fine metal particles are arranged in a two-dimensional grid-like pattern on said substrate.

Claim 9

A microwave device as claimed in claim 1, in which said fine metal particles are free of binder, vehicle and solvent.

Claim 10

A microwave device as claimed in claim 1, wherein said fine metal particles are deposited on said substrate by vacuum deposition.

Claim 11

A microwave device consisting essentially of a substrate, a thin layer deposited on said substrate and having a thickness of from 20 to 500 Angstrom units, said thin layer consisting of fine metal particles wherein each deposited fine metal particle contacts adjacent deposited fine metal particles, said fine metal particles being of a uniform size of not greater than 0.1 μm in diameter, said fine metal particles being deposited so that the positional relationships between each fine particle and its adjacent respective particles are substantially uniform with respect to any of said fine metal particles and the contacts between adjacent fine metal particles are substantially uniform point-to-point contacts throughout said microwave device, said substrate consisting of a material selected from the group consisting of Al 2 O 3 , SiO 2 and porcelain, and said fine metal particles being selected from the group consisting of Pt and alloys thereof, Nb-Zr, Nb-Ta, Nb-Ti, Pb-Bi, Mo-Tc, Ta-Ti, Nb 3 Sn, Nb 3 Al, Nb 3 Ge, Nb 3 Au, Nb 3 Pt, Ta 3 Sn and V 3 Si, wherein said microwave device has been prepared by exposing said substrate to a finely-focused electron beam scanned in a regular pattern on the surface of said substrate, and then vapor depositing said metal particles onto said substrate on those portions of said substrate that have been exposed to said electron beam, and then heating said substrate to 100° C. or higher.

Claim 12

A microwave device consisting essentially of a substrate, a thin layer deposited on said substrate and having a thickness of from 20 to 500 Angstrom units, said thin layer consisting of fine metal particles wherein each deposited fine metal particle contacts adjacent deposited fine metal particles, said fine metal particles being of a uniform size of not greater than 0.1 μm in diameter, said fine metal particles being deposited so that the positional relationships between each fine particle and its adjacent respective particles are substantially uniform with respect to any of said fine metal particles and the contacts between adjacent fine metal particles are substantially uniform point-to-point contacts throughout said microwave device, said substrate consisting of a material selected from the group consisting of Al 2 O 3 , SiO 2 and porcelain, and said fine metal particles being selected from the group consisting of Pt and alloys thereof, Nb-Zr, Nb-Ta, Nb-Ti, Pb-Bi, Mo-Tc, Ta-Ti, Nb 3 Sn, Nb 3 Al, Nb 3 Ge, Nb 3 Au, Nb 3 Pt, Ta 3 Sn and V 3 Si, wherein said microwave device has been prepared by exposing said substrate to a finely-focused electron beam scanned in a regular pattern on the surface of said substrate, and then vapor depositing said metal particles onto said substrate on those portions of said substrate that have been exposed to said electron beam, and then heating said substrate to 100° C. or higher.

Claim 13

A microwave device consisting of a substrate and vapor-deposited fine metal particles deposited thereon, said particles being free of binders, vehicles and solvents, said particles being of a uniform diameter of no greater than 0.1 μm, wherein said substrate consists of a material selected from the group consisting of Al 2 O 3 , SiO 2 and porcelain and said fine metal particles consist of a metal selected from the group consisting of Pt and alloys thereof, Nb-Zr, Nb-Ta, Nb-Ti, Pb-Bi, Mo-Tc, Ta-Ti, Nb 3 Sn, Nb 3 Al, Nb 3 Ge, Nb 3 Au, Nb 3 Pt, Ta 3 Sn and V 3 Si, wherein said microwave device has been prepared by the process of irradiating portions of said substrate with an electron beam, vapor depositing said metal particles on the irradiated portions of said substrate, said vapor-deposited metal particles being deposited on said substrate in a layer having a mean thickness of 20-500 Å and in a manner such that said metal particles are regularly arranged on said substrate, to positionally relate adjacent particles in substantial uniformity and to dispose said particles in contact with adjacent particles in substantial uniformity throughout said microwave device, and then heating said device to a temperature in the range of 30°-1,000° C.

Claim 14

A microwave device consisting of a substrate and vapor-deposited fine metal particles deposited thereon, said particles being free of binders, vehicles and solvents, said particles being of a uniform diameter of no greater than 0.1 μm, wherein said substrate consists of a material selected from the group consisting of Al 2 O 3 , SiO 2 and porcelain and said fine metal particles consist of a metal selected from the group consisting of Pt and alloys thereof, Nb-Zr, Nb-Ta, Nb-Ti, Pb-Bi, Mo-Tc, Ta-Ti, Nb 3 Sn, Nb 3 Al, Nb 3 Ge, Nb 3 Au, Nb 3 Pt, Ta 3 Sn and V 3 Si, wherein said microwave device has been prepared by the process of irradiating portions of said substrate with an electron beam, vapor depositing said metal particles on the irradiated portions of said substrate, said vapor-deposited metal particles being deposited on said substrate in a layer having a mean thickness of 20-500 Å and in a manner such that said metal particles are regularly arranged on said substrate, to positionally relate adjacent particles in substantial uniformity and to dispose said particles in contact with adjacent particles in substantial uniformity throughout said microwave device, and then heating said device to a temperature in the range of 30°-1,000° C.

Claim 15

A microwave device, as claimed in claim 11 wherein said substrate is irradiated by an electron beam scanned on said substrate in a predetermined pattern of two sets of parallel, spaced-apart lines, wherein the first and second sets of lines are perpendicular to each other.

Claim 16

A microwave device as claimed in claim 11 wherein said substrate has a surface resistivity of at least 1×10 10 ohm.cm, said substrate having adhering thereon an electrically conductive pattern consisting of said fine metal particles, said fine metal particles having substantially uniform particle sizes, the positional relations between each individual fine metal particle and the fine metal particles adjacent thereto being substantially uniform throughout the pattern and the electrical contacts between adjacent fine metal particles in the pattern being substantially uniform point-to-point contacts throughout the pattern.

Claim 17

A microwave device as claimed in claim 13 in which the contacts between adjacent particles are point-to-point contacts which form diodes.