Slotted diaphragm semiconductor device

Claim 2

An integrated semiconductor device, comprising: a semiconductor body with a first surface having a predetermined orientation with respect to a crystalline structure in the semiconductor body, the semiconductor body having a depression formed into the first surface of the body; a layer of thin film dielectric material covering at least a portion of the first surface; and a slotted diaphragm comprising the layer of thin film material and further comprising an electric element, the slotted diaphragm substantially covering the depression, the slotted diaphragm further comprising a single slot extending across the diaphragm from one extremity to the other, the slot having first and second ends intersecting the first surface of the semiconductor body, the slot being substantially centered on the diaphragm and being oriented so that, in the fabrication of the device, an anisotropic etch placed on the slot will undercut the diaphragm and form the depression, the electric element being substantially supported by the diaphragm and, therefore, substantially thermally and physically isolated from the semiconductor body.

Claim 3

The apparatus of claim 1 wherein the static electric element comprises a thermal-to-electric transducing element.

Claim 4

The apparatus of claim 1 wherein the electric element comprises an electric-to-thermal transducing element.

Claim 5

The apparatus of claim 1 wherein the electric element comprises a permalloy element.

Claim 6

The apparatus of claim 2 wherein the electric element is a permalloy element.

Claim 7

The apparatus of claim 5 wherein the electric element is a permalloy element.

Claim 8

The apparatus of claim 1 wherein the dielectric material comprises silicon nitride.

Claim 9

The apparatus of claim 2 wherein the dielectric material comprises silicon nitride.

Claim 10

The apparatus of claim 3 wherein the dielectric material comprises silicon nitride.

Claim 11

The apparatus of claim 4 wherein the dielectric material comprises silicon nitride.

Claim 12

An integrated semiconductor device, comprising: a semiconductor body having a depression formed into a first surface of the body, the semiconductor body comprising (100) silicon and having a (100) plane and a <110> direction, the first surface of the semiconductor body being substantially parallel to the (100) plane; a layer of thin film dielectric material covering at least a portion of the first surface; and a slotted diaphragm comprising the layer of thin film material and further comprising an electric element and forming a slotted diaphragm substantially covering the depression, a single slot extending across the diaphragm from one extremity to the other, the slot having first and second ends intersecting the first surface of the semiconductor body, the slot being oriented at substantially 45 degrees to the <110> direction and extending across the depression at the approximate center of the depression, the static electric element being substantially supported by the diaphragm and, therefore, substantially thermally and physically isolated from the semiconductor body.

Claim 13

An integrated semiconductor device, comprising: a semiconductor body having a depression formed into a first surface of the body, the semiconductor body comprising (100) silicon and having a (100) plane and a <110> direction, the first surface of the semiconductor body being substantially parallel to the (100) plane; a layer of thin film dielectric material covering at least a portion of the first surface; and a slotted diaphragm comprising the layer of thin film material and further comprising an electric element and forming a slotted diaphragm substantially covering the depression, a single slot extending across the diaphragm from one extremity to the other, the slot having first and second ends intersecting the first surface of the semiconductor body, the slot being oriented at substantially 45 degrees to the <110> direction and extending across the depression at the approximate center of the depression, the static electric element being substantially supported by the diaphragm and, therefore, substantially thermally and physically isolated from the semiconductor body.

Claim 14

The apparatus of claim 11 wherein the static electric element comprises a thermal-to-electric transducing element.

Claim 15

The apparatus of claim 11 wherein the electric element is an electric-to-thermal transducing element.

Claim 16

The apparatus of claim 11 wherein the electric element comprises a permalloy element.

Claim 17

The apparatus of claim 12 wherein the electric element comprises a permalloy element.

Claim 18

The apparatus of claim 13 wherein the electric element comprises a permalloy element.

Claim 19

The apparatus of claim 11 wherein the dielectric material comprises silicon nitride.

Claim 20

The apparatus of claim 12 wherein the electric element comprises a permalloy element.

Claim 21

A flow sensor comprising: a semiconductor body having a depression formed into a first surface of the body, the semiconductor body comprising (100) silicon and having a (100) plane and a <110> direction, the first surface of the semiconductor body being substantially parallel to the (100) plane; a layer of thin film material covering at least a portion of the first surface and forming a slotted diaphragm substantially covering the depression, the slotted diaphragm comprising slot means oriented at substantially 45 degrees to the <110> direction and extending across the depression at the approximate center of the depression; a thin film heater supported over the depression by the diaphragm, approximately half of the heater being located on each side of the slot; and a pair of thin film heat sensors supported by the diaphragm, the thin film sensors being disposed on opposite sides of the heater.

Claim 22

A flow sensor comprising: a semiconductor body having a depression formed into a first surface of the body, the semiconductor body comprising (100) silicon and having a (100) plane and a <110> direction, the first surface of the semiconductor body being substantially parallel to the (100) plane; a layer of thin film material covering at least a portion of the first surface and forming a slotted diaphragm substantially covering the depression, the slotted diaphragm comprising slot means oriented at substantially 45 degrees to the <110> direction and extending across the depression at the approximate center of the depression; a thin film heater supported over the depression by the diaphragm, approximately half of the heater being located on each side of the slot; and a pair of thin film heat sensors supported by the diaphragm, the thin film sensors being disposed on opposite sides of the heater.

Claim 23

The apparatus of claim 19 wherein the heater is operated at a temperature elevated above ambient, thus creating a no-flow temperature gradient in the air above and adjacent to the heater, the temperature within the no-flow gradient making a transition between the elevated temperature and substantially ambient temperature, the sensors being located sufficiently close to the heater to be located substantially within the no-flow temperature gradient.

Claim 24

The apparatus of claim 19 wherein the thin film heater and sensors each comprise a permalloy element.

Claim 25

The apparatus of claim 19 wherein the layer of thin film material comprises a dielectric material.

Claim 26

The apparatus of claim 22 wherein the dielectric material comprises silicon nitride.

Claim 27

The apparatus of claim 19 wherein the sensors are located from the heater at a preferred distance which, when contrasted to an alternate distance, provides a substantially greater change in the heat being delivered to the sensors for a given change in flow rate.

Claim 28

The apparatus of claim 24 wherein the heater is operated at a temperature elevated above ambient, thus creating a no-flow temperature gradient in the air above and adjacent to the heater, the temperature within the no-flow gradient making a transition between the elevated temperature and substantially ambient temperature, the sensors being located sufficiently close to the heater to be located substantially within the no-flow temperature gradient.

Claim 29

The apparatus of claim 24 wherein the thin film heater and sensors each comprise a permalloy element.

Claim 30

The apparatus of claim 24 wherein the layer of thin film material comprises a dielectric material.

Claim 31

The apparatus of claim 22 wherein the dielectric material comprises silicon nitride.

Claim 32

The apparatus of claim 28 wherein the proximal edges of the sensors are located from the near edges of the heater at a distance within the range of approximately 5 microns to approximately 25 microns.

Claim 33

The apparatus of claim 29 wherein the heater is operated at a temperature elevated above ambient, thus creating a no-flow temperature gradient in the air above and adjacent to the heater, the temperature within the no-flow gradient making a transition between the elevated temperature and substantially ambient temperature, the sensors being located sufficiently close to the heater to be located substantially within the no-flow temperature gradient.

Claim 34

The apparatus of claim 29 wherein the thin film heater and sensors each comprise a permalloy element.

Claim 35

The apparatus of claim 29 wherein the layer of thin film material comprises a dielectric material.

Claim 36

The apparatus of claim 32 wherein the dielectric material comprises silicon nitride.

Claim 37

The apparatus of claim 19 wherein the heater and each sensor comprise a resistive element having a pattern of resistive material formed in lines having a line width, the lines being separated by substantially a line width, the sensors being separated from the heater by a distance in the range of approximately one line width to approximately five line widths.

Claim 38

The apparatus of claim 34 wherein the heater is operated at a temperature elevated above ambient, thus creating a no-flow temperature gradient in the air above and adjacent to the heater, the temperature within the no-flow gradient making a transition between the elevated temperature and substantially ambient temperature, the sensors being located sufficiently close to the heater to be located substantially within the no-flow temperature gradient.

Claim 39

The apparatus of claim 34 wherein the thin film heater and sensors each comprise a permalloy element.

Claim 40

The apparatus of claim 34 wherein the layer of thin film material comprises a dielectric material.

Claim 41

The apparatus of claim 37 wherein the dielectric material comprises silicon nitride.

Claim 42

An integrated semiconductor device, comprising: a semiconductor body with a first surface having a predetermined orientation with respect to a crystalline structure in the semiconductor body, the semiconductor body having a depression formed into the first surface of the body; a layer of thin film dielectric material covering at least a portion of the first surface; a slotted diaphragm comprising the layer of thin film material and further comprising an electric element, the slotted diaphragm substantially covering the depression, wherein the slotted diaphragm further comprises a slot means including a plurality of spaced axially aligned slots extending across the diaphragm from one extremity to the other, each said slot exposing a defined area of the first surface of the semiconductor body, the axial separation between said slots being less than the slot width, the slot means being substantially defining the center of the diaphragm and being oriented so that, in the fabrication of the device, an anisotropic etch placed in each slot will undercut the diaphragm and form the depression, the static electric element being substantially supported by the diaphragm and, therefore, substantially thermally and physically isolated from the semiconductor body.

Claim 43

An integrated semiconductor device, comprising: a semiconductor body with a first surface having a predetermined orientation with respect to a crystalline structure in the semiconductor body, the semiconductor body having a depression formed into the first surface of the body; a layer of thin film dielectric material covering at least a portion of the first surface; a slotted diaphragm comprising the layer of thin film material and further comprising an electric element, the slotted diaphragm substantially covering the depression, wherein the slotted diaphragm further comprises a slot means including a plurality of spaced axially aligned slots extending across the diaphragm from one extremity to the other, each said slot exposing a defined area of the first surface of the semiconductor body, the axial separation between said slots being less than the slot width, the slot means being substantially defining the center of the diaphragm and being oriented so that, in the fabrication of the device, an anisotropic etch placed in each slot will undercut the diaphragm and form the depression, the static electric element being substantially supported by the diaphragm and, therefore, substantially thermally and physically isolated from the semiconductor body.

Claim 44

The apparatus of claim 39 wherein the static electric element comprises a thermal-to-electric transducing element.

Claim 45

The apparatus of claim 39 wherein the electric element comprises an electric-to-thermal transducing element.

Claim 46

The apparatus of claim 40 wherein the electric element comprises a permalloy element.

Claim 47

The apparatus of claim 41 wherein the electric element comprises a permalloy element.

Claim 48

The apparatus of claim 39 wherein the dielectric material comprises silicon nitride.

Claim 49

The apparatus of claim 40 wherein the dielectric material comprises silicon nitride.

Claim 50

The apparatus of claim 41 wherein the dielectric material comprises silicon nitride.

Claim 51

The apparatus of claim 42 wherein the dielectric material comprises silicon nitride.

Claim 52

An integrated semiconductor device, comprising: a semiconductor body having a depression formed into a first surface of the body, the semiconductor body comprising (100) silicon and having a (100) plane and a <110> direction, the first surface of the semiconductor body being substantially parallel to the (100) plane; a layer of thin film dielectric material covering at least a portion of the first surface; and a slotted diaphragm comprising the layer of thin film material and further comprising an electric element, the slotted diaphragm substantially covering the depression, wherein the slotted diaphragm further comprises a slot means including a plurality of spaced axially aligned slots extending across the diaphragm from one extremity to the other, each said slot exposing a defined area of first surface of the semiconductor body, The axial separation between said slots being less than the slot width, the slot means being substantially centered on the diaphragm, and being oriented so that, in the fabrication of the device, an anisotropic etch placed in each slot will undercut the diaphragm and form the depression, the static electric element being substantially supported by the diaphragm and, therefore, substantially thermally and physically isolated from the semiconductor body.

Claim 53

An integrated semiconductor device, comprising: a semiconductor body having a depression formed into a first surface of the body, the semiconductor body comprising (100) silicon and having a (100) plane and a <110> direction, the first surface of the semiconductor body being substantially parallel to the (100) plane; a layer of thin film dielectric material covering at least a portion of the first surface; and a slotted diaphragm comprising the layer of thin film material and further comprising an electric element, the slotted diaphragm substantially covering the depression, wherein the slotted diaphragm further comprises a slot means including a plurality of spaced axially aligned slots extending across the diaphragm from one extremity to the other, each said slot exposing a defined area of first surface of the semiconductor body, The axial separation between said slots being less than the slot width, the slot means being substantially centered on the diaphragm, and being oriented so that, in the fabrication of the device, an anisotropic etch placed in each slot will undercut the diaphragm and form the depression, the static electric element being substantially supported by the diaphragm and, therefore, substantially thermally and physically isolated from the semiconductor body.

Claim 54

The apparatus of claim 40 wherein the static electric element comprises a thermal-to-electric transducing element.

Claim 55

The apparatus of claim 48 wherein the electric element comprises an electric-to-thermal transducing element.

Claim 56

The apparatus of claim 49 wherein the electric element comprises a permalloy element.

Claim 57

The apparatus of claim 59 wherein the electric element comprises a permalloy element.

Claim 58

The apparatus of claim 48 wherein the dielectric material comprises silicon nitride.

Claim 59

The apparatus of claim 49 wherein the electric material comprises silicon nitride.

Claim 60

The apparatus of claim 50 wherein the dielectric material comprises silicon nitride.

Claim 61

The apparatus of claim 51 wherein the dielectric material comprises silicon nitride.

Claim 62

The apparatus of claim 19 wherein said slot means comprises a plurality of spaced axially aligned slots extending across the diaphram, the axial separation between said slots being less than the slot width.