Memory device with improved common data line bias arrangement

Claim 2

A memory device comprising: a plurality of memory cells each of which stores data therein; a plurality of word lines and a plurality of pairs of data lines coupled to said plurality of memory cells so that each memory cell is coupled to a word line and at least one data line in a pair of data lines; a pair of common data lines; switching means disposed between said plurality of pairs of data lines and said pair of common data lines and for selectively coupling one of said plurality of pairs of data lines to said pair of common data lines; selection means responsive to address signals and coupled to said plurality of word lines and to said switching means and including means for selecting a predetermined memory cell in accordance with said address signals by selecting a predetermined word line and for controlling said switching means to couple a predetermined pair of data lines to said pair of common data lines; differential bipolar transistors having their bases coupled to said pair of common data lines, respectively; current source means coupled to emitters of said pair of bipolar transistors and for providing operating current for said differential bipolar transistors; output means coupled to collectors of said differential bipolar transistors and for providing an output in accordance with output signals supplied from said collectors of said differential bipolar transistors, said output means including first means for biasing said collectors of said differential bipolar transistors at a first predetermined voltage; second means including at least one MISFET for setting bias voltages of said differential bipolar transistors at a second predetermined voltage by biasing said pair of common data lines, wherein said second predetermined voltage is less than said first predetermined voltage so that said differential bipolar transistors are operated in a non-saturation region, wherein said second means includes a voltage generator circuit for generating an output voltage between first and second power supply voltages for said memory device, a first potential level of said first power supply voltage being greater than a second potential level of said second power supply voltage, and a bias circuit connected to said pair of common data lines and to said voltage generator circuit, and wherein the output voltage of said voltage generator circuit is fed as a supply voltage to said bias circuit.

Claim 3

A memory device according to claim 1, wherein said voltage generator circuit has an arrangement in which diodes are connected in series between a supply terminal having said first potential level and said bias circuit.

Claim 4

A memory device according to claim I, wherein said each memory cell is a flip-flop which is composed of MISFETS.

Claim 5

A memory device according to claim 1, wherein said bias circuit is a voltage divider circuit [which is composed of a plurality of impedance elements, wherein the output voltage generated by said voltage generator circuit is divided by said impedance elements, and wherein said pair of common data lines are biased to a predetermined potential by the divided voltages.

Claim 6

A memory device according to claim 4, wherein said impedance elements are MIS field effect transistors.

Claim 7

A memory device according to claim 1, wherein the memory cells, the common data lines and the bias circuits are disposed in a manner to be divided in a plurality of groups; and the output of said constant voltage generator circuit is shared and utilized by said bias circuits which are disposed for the respective common data lines of the corresponding groups.

Claim 8

A memory device according to claim 6, wherein said output of said voltage generator circuit is of low output impedance.

Claim 9

A memory device according to claim 1, wherein said first means in said output means is coupled between said collectors of said differential bipolar transistors and a terminal to which a first power supply voltage is supplied, and wherein said first means includes means for providing a pair of outputs in accordance with said output signals supplied from said collectors of said differential bipolar transistors.

Claim 10

A memory device according to claim 8, wherein said first means includes grounded base transistors, emitters of which are coupled to said collectors of said differential bipolar transistors, respectively, and level shift elements coupled between said terminal to which said first power supply voltage is supplied and bases of said grounded base transistors.

Claim 11

A memory device according to claim 1, wherein said voltage generator circuit generates an output of low output impedance.

Claim 12

A memory device according to claim 10, wherein said voltage generator circuit is a voltage follower circuit.

Claim 13

A memory device according to claim 10, wherein said voltage generator circuit is constructed of bipolar and MIS field effect transistors in combination.

Claim 14

A memory device according to claim 1, wherein said voltage generator circuit includes means for providing said output voltage with a predetermined low output impedance.

Claim 15

A memory device according to claim 13, wherein said means in said voltage generator circuit includes an emitter follower transistor having a collector electrode coupled to a terminal to which a first power supply voltage is supplied, an emitter electrode coupled to said bias circuit and a base electrode coupled to receive a third predetermined voltage between said first power supply voltage and said output voltage of said voltage generator circuit, and an impedance element coupled between said emitter electrode and a terminal to which said second power supply voltage is supplied.

Claim 16

A memory device according to claim 14, wherein said impedance element includes a MISFET.

Claim 17

A semiconductor memory device comprising: a first terminal to which a first supply voltage is applied; a second terminal to which a second supply voltage is applied, wherein said second supply voltage is smaller than said first power supply voltage; a plurality of memory cells which store data wherein; a plurality of word lines and a plurality of pairs of data lines coupled to said plurality of memory cells so that each memory cell is coupled to a word line and a pair of data lines; a pair of common data lines; switching means disposed between said plurality of data lines and said pair of common data lines, and for coupling a selected one of said plurality of pairs of data lines to said pair of common data lines; selecting means coupled to said plurality of word lines and to said switching means, and including means for selecting one of said plurality of memory cells by selecting a predetermined word line and by controlling said switching means to couple a predetermined pair of data lines to said pair of common data lines in accordance with address signals supplied thereto; a differential pair of bipolar transistors that serve as a differential circuit, bases thereof being coupled to said pair of common data lines to receive complementary signals on said pair of common data lines; current providing means coupled between emitters of said differential pair of bipolar transistors and said second terminal, and for providing operating current to said differential circuit; output providing means coupled between said first terminal and collectors of said differential pair of bipolar transistors, and for providing outputs in accordance with signals supplied from said collectors of said differential pair of bipolar transistors, wherein collector voltages of said differential pair of bipolar transistors are brought to predetermined voltages by said output providing means; voltage generating means coupled to said first terminal for providing at an output terminal thereof a reference voltage between said first and second supply voltages; a pair of first MOSFETs which are respectively coupled between said output terminal of said voltage generating means and said pair of common data lines; and a pair of second MOSFETs which are respectively coupled between said pair of common data lines and said second terminal, wherein said pair of common data lines are brought to predetermined second voltages between said reference voltage and said second supply voltage at a time when said first and second MOSFETs are to be turned on for a read operation, wherein voltages on said bases of said differential pair of bipolar transistors are brought to predetermined second voltages between said reference voltage and said second supply voltage at a time when said first and second MOSFETs are turned on for biasing said pair of common data lines, and wherein said predetermined second voltages are smaller than said predetermined first voltages so that differential pair of bipolar transistors are operated in a non-saturation region.

Claim 18

A semiconductor memory device comprising: a first terminal to which a first supply voltage is applied; a second terminal to which a second supply voltage is applied, wherein said second supply voltage is smaller than said first power supply voltage; a plurality of memory cells which store data wherein; a plurality of word lines and a plurality of pairs of data lines coupled to said plurality of memory cells so that each memory cell is coupled to a word line and a pair of data lines; a pair of common data lines; switching means disposed between said plurality of data lines and said pair of common data lines, and for coupling a selected one of said plurality of pairs of data lines to said pair of common data lines; selecting means coupled to said plurality of word lines and to said switching means, and including means for selecting one of said plurality of memory cells by selecting a predetermined word line and by controlling said switching means to couple a predetermined pair of data lines to said pair of common data lines in accordance with address signals supplied thereto; a differential pair of bipolar transistors that serve as a differential circuit, bases thereof being coupled to said pair of common data lines to receive complementary signals on said pair of common data lines; current providing means coupled between emitters of said differential pair of bipolar transistors and said second terminal, and for providing operating current to said differential circuit; output providing means coupled between said first terminal and collectors of said differential pair of bipolar transistors, and for providing outputs in accordance with signals supplied from said collectors of said differential pair of bipolar transistors, wherein collector voltages of said differential pair of bipolar transistors are brought to predetermined voltages by said output providing means; voltage generating means coupled to said first terminal for providing at an output terminal thereof a reference voltage between said first and second supply voltages; a pair of first MOSFETs which are respectively coupled between said output terminal of said voltage generating means and said pair of common data lines; and a pair of second MOSFETs which are respectively coupled between said pair of common data lines and said second terminal, wherein said pair of common data lines are brought to predetermined second voltages between said reference voltage and said second supply voltage at a time when said first and second MOSFETs are to be turned on for a read operation, wherein voltages on said bases of said differential pair of bipolar transistors are brought to predetermined second voltages between said reference voltage and said second supply voltage at a time when said first and second MOSFETs are turned on for biasing said pair of common data lines, and wherein said predetermined second voltages are smaller than said predetermined first voltages so that differential pair of bipolar transistors are operated in a non-saturation region.

Claim 19

A semiconductor memory device according to claim 16, wherein said plurality of memory cells includes static type memory cells each of which has a flip-flop circuit.

Claim 20

A semiconductor memory device according to claim 16, wherein said voltage generating means includes a bipolar transistor with a collector coupled to said first terminal, with an emitter coupled to said pair of first MOSFETs and with a base coupled to receive a predetermined third voltage between said first supply voltage and said reference voltage, and an impedance element coupled between said emitter of said bipolar transistor and said second terminal.

Claim 21

A semiconductor memory device according to claim 16, wherein said output providing means includes a pair of grounded base transistors with emitters respectively coupled to said second collectors of said differential pair of bipolar transistors, with bases coupled to said first terminal through a diode element and with collectors coupled to said first terminal through resistor elements, and wherein said output is provided from said collectors of said grounded base transistors.

Claim 22

A semiconductor memory device according to claim 16, wherein said voltage generating means has a control terminal for receiving a control signal indicating a chip selection mode so that said voltage generating means generates said reference voltage when a chip is selected.

Claim 23

A semiconductor memory device according to claim 16, wherein gate electrodes of said pair of first MOSFETs are coupled to receive a timing signal WECS, wherein said current providing means includes a third MOSFET with a source-drain path coupled between said emitters of said differential pair of bipolar transistors and said second terminal and with a gate electrode coupled to receive a sense circuit activation signal, and wherein gate electrodes of said pair of second MOSFETs are coupled to receive said sense circuit activation signal so that said second and third MOSFETs are turned on by said sense circuit activation signal.