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US4837376A Expired / Lapsed US ⏱️ 0.0 years remaining

Process for refining silicon and silicon purified thereby

Assignee: SolarWorld Industries Sachsen GmbH
•
Filing: 1987-10-05
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Granted: 1989-06-06
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Expires: 2007-10-05
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Abstract

Abstract Highly pure silicon is produced by refining impure silicon to remove deleterious impurities by contacting a melt of the impure silicon with a reacitve gas which comprises a gaseous halogen compound mixed with steam, hydrogen or a stem/hydrogen mixture.

Inventors

  • 👤 Ingo Schwirtlich
  • 👤 Horst Lange
  • 👤 Werner Kannchen

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 08:15
CPC Classifications
C; C01; C01B; C01B33/00; C01B33/02; C01B33/037

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 62 words
A process for refining silicon to remove impurities which comprises contacting a silicon melt with a reactive gas which comprises a gaseous halogen compound mixed with steam, hydrogen, or a steam/hydrogen mixture wherein the halogen compound is at least one halogen silane of the formula Si n X 2n+2 , wherein n is 1 to 4 and X represents halogen and/or hydrogen.
Claim 2
Dependent Claim 62 words
A process for refining silicon to remove impurities which comprises contacting a silicon melt with a reactive gas which comprises a gaseous halogen compound mixed with steam, hydrogen, or a steam/hydrogen mixture wherein the halogen compound is at least one halogen silane of the formula Si n X 2n+2 , wherein n is 1 to 4 and X represents halogen and/or hydrogen.
Claim 3
Dependent Claim 13 words
A process according to claim 1 wherein the halogen compound is silicon tetrachloride.
Claim 4
Dependent Claim 19 words
A process according to claim 1 wherein the reactive gas is a mixture of silicon tetrachloride, steam and hydrogen.
Claim 5
Dependent Claim 16 words
A process according to claim 1 wherein an inert gas is added to the reactive gas.
Claim 6
Dependent Claim 12 words
A process according to claim 4 wherein the inert gas is argon.
Claim 7
Dependent Claim 25 words
A process according to claim 1 wherein the silicon melt is subsequently degasses by a vacuum treatment at pressures of 10 -1 mbar or less.

References Cited (Backward Citations)

DE1039752B Cited
GB792166A Cited
GB1103329A Cited
US3442622A Cited
US4097584A Cited
US4298423A Cited
US4172883A Cited
EP0007063A1 Cited
US4200621A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-06-05 1992-12-05 1993-06-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-06-05 1996-12-05 1997-06-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-06-05 2000-12-05 2001-06-06 $7700.00 Window Closed / Lapsed

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