US4842679A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for the production of semiconductor devices
Assignee: Sharp Corp
•
Filing: 1987-03-19
•
Granted: 1989-06-27
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Expires: 2007-03-19
Abstract
Abstract A method for the production of semiconductor devices comprising introducing source gases, etching gases or source molecules into a substrate to grow crystalline layers on said substrate or to etch said substrate, resulting in a semiconductor device, wherein said method further comprises applying a given electric potential to said substrate; applying an electric potential that is different from that of said substrate to an electron-beam irradiator disposed directly above said substrate; and irradiating said irradiator with electron beams from an electron-beam emitting means, whereby said substrate is irradiated with the secondary electron beams generated from said irradiator and/or with the electron beams transmitted through said irradiator.
Inventors
- 👤 Hiroaki Kudo
- 👤 Sadayoshi Matsui
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 07:00
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/3002; H10; H10P; H10P95/00; H10P95/90
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
116 words
A method for the production of semiconductor devices comprising introducing source gases, etching gases or source molecules into a chamber having a substrate, to grow crystalline layers on said substrate or to etch said substrate, resulting in a semiconductor device, wherein said method further comprises applying a predetermined electric potential to said substrate; applying an electric potential that is different from that applied to said substrate to an intermediate body disposed directly above said substrate; and irradiating said body with electron beams from an electron-beam emitting means, whereby said substrate is irradiated with secondary electron beams generated from said body or is irradiated with said secondary electron beams and the electron beams transmitted through said body.
Claim 2
Independent Claim
116 words
A method for the production of semiconductor devices comprising introducing source gases, etching gases or source molecules into a chamber having a substrate, to grow crystalline layers on said substrate or to etch said substrate, resulting in a semiconductor device, wherein said method further comprises applying a predetermined electric potential to said substrate; applying an electric potential that is different from that applied to said substrate to an intermediate body disposed directly above said substrate; and irradiating said body with electron beams from an electron-beam emitting means, whereby said substrate is irradiated with secondary electron beams generated from said body or is irradiated with said secondary electron beams and the electron beams transmitted through said body.
Claim 3
Dependent Claim
21 words
A method for the production of semiconductor devices according to claim 1, wherein said body is a grounded fine mesh grid.
Claim 4
Dependent Claim
29 words
A method for the production of semiconductor devices according to claim 1, wherein said body is a thin plate covered with a film having a high secondary electron-radiation efficiency.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-06-26 | 1992-12-26 | 1993-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-06-26 | 1996-12-26 | 1997-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-06-26 | 2000-12-26 | 2001-06-27 | $7700.00 | Window Closed / Lapsed |