Semiconductor memory device having increased capacitance for the storing nodes of the memory cells

Claim 1

A semiconductor memory device formed on a semiconductor substrate to constitute a memory cell of a static memory device, comprising first and second driver MOS transistors, first and second transfer MOS transistors and first and second load resistances, wherein gates of said first and second transfer MOS transistors are connected to a word line, wherein a drain of said first driver MOS transistor is connected to a first data line through a source-drain path of said first transfer gate MOS transistor, wherein a drain of said second driver MOS transistor is connected to a second data line through a source-drain path of said second transfer gate MOS transistor, wherein said gate of said first driver MOS transistor is connected to said drain of said second driver MOS transistor, wherein said gate of said second driver MOS transistor is connected to said drain of said first driver MOS transistor, wherein said drains of said first and second driver MOS transistors are connected to first ends of said first and second load resistances respectively, wherein second ends of said first and second load resistances are connected to a first operating potential, wherein sources of said first and second driver MOS transistors are connected to a second operating potential respectively, wherein said drain of said first driver MOS transistor is connected to said first end of said first load resistance through first conductive means, wherein said drain of said second driver MOS transistor is connected to said first end of said second load resistance through second conductive means, said gates of said first and second driver MOS transistors as well as of said first and second transfer MOS transistors being formed by a first polycrystalline silicon layer on said semiconductor substrate, wherein a first insulating material layer is formed on said first polycrystalline silicon layer, wherein a second polycrystalline silicon layer is formed on said first insulating material layer, wherein a second insulating material layer is formed on said second polycrystalline silicon layer, wherein a third polycrystalline silicon layer is formed on said second insulating material layer, wherein a first capacitance of a first node at said drain of said first driver MOS transistor and a second capacitance of a second node at said drain of said second driver MOS transistor are formed by a sandwich structure of said second polycrystalline silicon layer, said second insulating material layer and said third polycrystalline silicon layer, and wherein said first and second load resistances as well as said first and second conductive means are formed by one of said polycrystalline silicon layers of said sandwich structure other than said first polycrystalline silicon layer.