Semiconductor memory device

Claim 2

A semiconductor memory device of a redundancy configuration having lines of main memory cells each storing data of one bit and a line of spare memory cells each storing data of one bit, the spare line being formed to substitute a defective line containing a defective main memory cell if there is such a defective line, the substitution by the spare line being achieved by having an arrangement by which the spare line is selected by the address of the defective line, in substitution for the defective line, said semiconductor memory device comprising a comparator comparing an input address received by the memory device, with an address of the defective line which has been programmed in said comparator, a spare line selector responsive to the output of the comparator for selecting the spare line when the input address is found to coincide with the programmed address, a line decoder responsive to the input address for selecting one of the lines of the main memory cells, means responsive to the output of the comparator for producing a signal for inactivating the line decoder when the input address is found to coincide with the programmed address, and means for applying the input address to the line decoder and to the comparator so that said comparator receives said input address a predetermined time period before said line decoder receives said input address.

Claim 3

A device according to claim 1, wherein said means for applying the input address comprises an address buffer having a plurality of cascaded stages, and an output derived from an intermediate stage is applied to the comparator as said input address, while an output derived from a stage succeeding, in position, the first-mentioned intermediate stage is applied to the line decoder as said input address.

Claim 4

A device according to claim 1, wherein said means for applying the input address comprises an address buffer and a predecoder connected to receive the output of the address buffer, and the output of the address buffer is applied to the comparator while the output of the predecoder is applied to the line decoder.

Claim 5

A semiconductor memory device of a redundancy configuration having lines of main memory cells each storing data of one bit and a line of spare memory cells each storing data of one bit, the spare line being formed to substitute a defective line containing a defective main memory cell if there is such a defective line, the substitution by the spare line being achieved by having an arrangement by which the spare line is selected by the address of the defective line, in substitution for the defective line, said semiconductor memory device comprising: a comparator for comparing an input address received by the memory device, with an address of the defective line which has been programmed in said comparator; a spare line selector responsive to the output of the comparator for selecting the spare line when the input address is found to coincide with the programmed address; a line decoder responsive to the input address for selecting one of the lines of the main memory cells; means responsive to the output of the comparator for producing a signal for inactivating the line decoder when the input address is found to coincide with the programmed address; means for applying the input address to the line decoder and to the comparator so that said comparator receives said input address a predetermined time period before said line decoder receives said input address; and wherein said comparator comprises a dynamic NOR gate having discharge paths each formed of a gate element receiving a bit of the input address or an inversion of said bit to be opened or closed depending on the value of the particular bit of the input address currently applied, and PROM elements each being connected in series with the gate element, the PROM elements of the discharge paths being programmed to represent an address of a defective line, the dynamic NOR gate having a first node forming an output thereof and a second node, each of the series connections of the PROM element and the gate element being connected across the first and the second nodes, and equalizing means for causing the potential on the second node to be substantially identical with the potential on the first node during a precharge period.

Claim 6

A semiconductor memory device of a redundancy configuration having lines of main memory cells each storing data of one bit and a line of spare memory cells each storing data of one bit, the spare line being formed to substitute a defective line containing a defective main memory cell if there is such a defective line, the substitution by the spare line being achieved by having an arrangement by which the spare line is selected by the address of the defective line, in substitution for the defective line, said semiconductor memory device comprising: a comparator for comparing an input address received by the memory device, with an address of the defective line which has been programmed in said comparator; a spare line selector responsive to the output of the comparator for selecting the spare line when the input address is found to coincide with the programmed address; a line decoder responsive to the input address for selecting one of the lines of the main memory cells; means responsive to the output of the comparator for producing a signal for inactivating the line decoder when the input address is found to coincide with the programmed address; means for applying the input address to the line decoder and to the comparator so that said comparator receives said input address a predetermined time period before said line decoder receives said input address; and wherein said comparator comprises a dynamic NOR gate having discharge paths each formed of a gate element receiving a bit of the input address or an inversion of said bit to be opened or closed depending on the value of the particular bit of the input address currently applied, and PROM elements each being connected in series with the gate element, the PROM elements of the discharge paths being programmed to represent an address of a defective line, the dynamic NOR gate having a first node forming an output thereof and a second node, each of the series connections of the PROM element and the gate element being connected across the first and the second nodes, and equalizing means for causing the potential on the second node to be substantially identical with the potential on the first node during a precharge period.

Claim 7

A device according to claim 4, wherein the gate element of each discharge path comprises a transistor having a gate electrode connected to receive a bit of the input address or its complement.

Claim 8

A device according to claim 5, wherein each of the PROM elements comprises a fuse which has been blown or unblown depending on the corresponding bit.

Claim 9

A device according to claim 4, wherein said comparator further comprises means for precharging the first node during the precharge period.

Claim 10

A device according to claim 7, wherein said precharging means comprises a transistor coupling the first node to a power supply and being made conductive during the precharge period.

Claim 11

A device according to claim 8, wherein said precharging means further comprises an additional transistor coupling the second node to the power supply during the precharge period.

Claim 12

A device according to claim 4, wherein said means for applying the input address comprises an address buffer having a plurality of cascaded stages, and an output derived from an intermediate stage of said plurality of cascaded stages being applied to the comparator as said input address, while an output derived from a stage succeeding, in position, the first-mentioned intermediate stage is applied to the line decoder as said input address.

Claim 13

A device according to claim 4, wherein said means for applying the input address comprises an address buffer and a predecoder connected to receive the output of the address buffer, and the output of the address buffer being applied to the comparator while the output of the predecoder is applied to the line decoder.

Claim 14

A semiconductor memory device of a redundancy configuration having lines of main memory cells each storing data of one bit and a line of spare memory cells each storing data of one bit, the spare line being formed to substitute a defective line containing a defective main memory cell if there is such a defective line, the substitution by the spare line being achieved by having an arrangement by which the spare line is selected by the address of the defective line in substitution for the defective line, said semiconductor memory device comprising: a comparator comparing an input address received by the memory device with an address of the defective line which has been programmed in said comparator; a spare line selector responsive to the output of the comparator for selecting the spare line when the input address is found to coincide with the programmed address; a line decoder responsive to the input address for selecting one of the lines of the main memory cells; means responsive to the output of the comparator for producing a signal for inactivating the line decoder when the input address is found to coincide with the programmed address; means for applying the input address to the line decoder and to the comparator so that said comparator receives said input address a predetermined time period before said line decoder receives said input address; and means for precharging the output of the comparator during a precharge period.

Claim 15

A semiconductor memory device of a redundancy configuration having lines of main memory cells each storing data of one bit and a line of spare memory cells each storing data of one bit, the spare line being formed to substitute a defective line containing a defective main memory cell if there is such a defective line, the substitution by the spare line being achieved by having an arrangement by which the spare line is selected by the address of the defective line in substitution for the defective line, said semiconductor memory device comprising: a comparator comparing an input address received by the memory device with an address of the defective line which has been programmed in said comparator; a spare line selector responsive to the output of the comparator for selecting the spare line when the input address is found to coincide with the programmed address; a line decoder responsive to the input address for selecting one of the lines of the main memory cells; means responsive to the output of the comparator for producing a signal for inactivating the line decoder when the input address is found to coincide with the programmed address; means for applying the input address to the line decoder and to the comparator so that said comparator receives said input address a predetermined time period before said line decoder receives said input address; and means for precharging the output of the comparator during a precharge period.

Claim 16

A device according to claim 12, wherein said precharging means comprises a transistor coupling the output of the comparator to a power supply and being made conductive during a precharge period.

Claim 17

A device according to claim 12, and further comprising an equalizing means connected to a reference node of the comparator for causing the potential on the reference node to be substantially identical to the potential at the output of the comparator during a precharge period of said precharging means, and wherein said equalizing means comprises a transistor coupling the reference node to a power supply during the precharge period.

Claim 18

A device according to claim 12, wherein said means for applying the input address comprises an address buffer having a plurality of cascaded stages, and an output derived from an intermediate stage of said plurality of cascaded stages being applied to the comparator as said input address, while an output derived from a stage succeeding, in position, the first-mentioned intermediate stage is applied to the line decoder as said input address.

Claim 19

A device according to claim 12, wherein said means for applying the input address comprises an address buffer and a predecoder connected to receive the output of the address buffer, and the output of the address buffer being applied to the comparator while the output of the predecoder is applied to the line decoder.