US4859908A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma processing apparatus for large area ion irradiation
Assignee: Panasonic Holdings Corp
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Filing: 1987-09-23
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Granted: 1989-08-22
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Expires: 2007-09-23
Abstract
Abstract A plasma processing apparatus performs various plasma processings of a substrate having a large area in a semiconductor element manufacturing process, by using highly excited plasma generated at a low pressure under the application of RF power and a magnetic field. In this plasma processing apparatus, a gas is introduced into a vacuum chamber to be used as an ion source, RF power is applied to two electrodes having respective surfaces opposite to each other through the gas to thereby generate the plasma in the vacuum chamber, and a magnetic field is applied to the plasma from a magnetic field source arranged at a predetermined position. The intensity of the applied magnetic field is set to be 1.5 times or more the magnetic field intensity which causes electron cyclotron resonance to occur at the frequency f of the applied RF power. Particularly, when the frequency f of the RF power is 13.56 MHz, the magnetic field intensity is selected to be in the range from 25 gausses to 35 gausses.
Inventors
- 👤 Akihisa Yoshida
- 👤 Kentaro Setsune
- 👤 Takashi Hirao
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 13:40
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/32091; C; C30; C30B; C30B31/00; C30B31/20; C30B31/22; H01J37/32357; H01J37/32431; H01J37/3266
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
186 words
An ion irradiation processing apparatus comprising: a discharge chamber including a first vacuum chamber having an outer surface formed of an insulating material, RF electrodes disposed outside said first vacuum chamber and along said outer surface thereof, said RF electrodes being supplied with RF power, and a magnetic field source disposed at a predetermined position outside said first vacuum chamber, said RF electrodes and said magnetic field source comprising means for generating a ion plasma within said first vacuum chamber a substrate chamber including a second vacuum chamber in communication with said discharge chamber, and a substrate stand mounted within said second vacuum chamber; and biasing means for causing ions from said plasma to uniformly irradiate said substrate stand in said substrate chamber, said biasing means including a first electrode, having an aperture, interposed between said substrate chamber and said discharge chamber, said first electrode being electrically insulated from said substrate chamber and said discharge chamber, and a second electrode disposed in said discharge chamber opposite to and spaced apart from said first electrode, said first and said second electrodes being connected across a voltage source.
Claim 2
Dependent Claim
186 words
An ion irradiation processing apparatus comprising: a discharge chamber including a first vacuum chamber having an outer surface formed of an insulating material, RF electrodes disposed outside said first vacuum chamber and along said outer surface thereof, said RF electrodes being supplied with RF power, and a magnetic field source disposed at a predetermined position outside said first vacuum chamber, said RF electrodes and said magnetic field source comprising means for generating a ion plasma within said first vacuum chamber a substrate chamber including a second vacuum chamber in communication with said discharge chamber, and a substrate stand mounted within said second vacuum chamber; and biasing means for causing ions from said plasma to uniformly irradiate said substrate stand in said substrate chamber, said biasing means including a first electrode, having an aperture, interposed between said substrate chamber and said discharge chamber, said first electrode being electrically insulated from said substrate chamber and said discharge chamber, and a second electrode disposed in said discharge chamber opposite to and spaced apart from said first electrode, said first and said second electrodes being connected across a voltage source.
Claim 3
Dependent Claim
19 words
An apparatus according to claim 1, further comprising a conductive mesh partially covering said aperture of said first electrode.
Claim 4
Dependent Claim
20 words
An apparatus according to claim 1, further comprising a conductive porous plate partially covering said aperture of said first electrode.
Claim 5
Dependent Claim
24 words
An apparatus according to claim 1, wherein said discharge chamber further comprises a grounded shield separating said RF electrodes from said magnetic field source.
Claim 6
Dependent Claim
20 words
An apparatus according to claim 4, further comprising an insulating member interposed between said RF electrodes and said grounded shield.
Claim 7
Dependent Claim
21 words
An apparatus according to claim 5, further comprising a hermetic enclosure disposed outside said electromagnetic coil enclosing said first vacuum chamber.
Claim 8
Dependent Claim
20 words
An apparatus according to claim 6, further comprising an insulating member interposed between said RF electrodes and said grounded shield.
Claim 9
Dependent Claim
22 words
An apparatus according to claim 1, wherein said first vacuum chamber is comprised of a cylindrical tube made of an insulating material.
Claim 10
Dependent Claim
19 words
An apparatus according in claim 1, wherein said first vacuum chamber includes first and second elongated opposing parallel surfaces.
Claim 11
Dependent Claim
132 words
An ion irradiation processing apparatus comprising: a discharge chamber including a first vacuum chamber containing therein a first electrode, a first conductive porous plate, and a second conductive porous plate, said electrode and said plates being connected to a voltage source, with said first electrode, said first conductive porous plate, and said second conductive porous plate being arranged parallel with one another; a substrate chamber comprised of a second vacuum chamber communicating with said discharge chamber, said second vacuum chamber containing therein a substrate stand arranged in parallel with said second conductive porous plate; an RF power source connected to said first electrode and said first porous plate for applying RF power across said first electrode and said first conductive porous plate; and a magnetic field source disposed outside said discharge chamber.
Claim 12
Dependent Claim
132 words
An ion irradiation processing apparatus comprising: a discharge chamber including a first vacuum chamber containing therein a first electrode, a first conductive porous plate, and a second conductive porous plate, said electrode and said plates being connected to a voltage source, with said first electrode, said first conductive porous plate, and said second conductive porous plate being arranged parallel with one another; a substrate chamber comprised of a second vacuum chamber communicating with said discharge chamber, said second vacuum chamber containing therein a substrate stand arranged in parallel with said second conductive porous plate; an RF power source connected to said first electrode and said first porous plate for applying RF power across said first electrode and said first conductive porous plate; and a magnetic field source disposed outside said discharge chamber.
Claim 13
Dependent Claim
18 words
An apparatus according to claim 10, wherein said first conductive porous plate is formed by a conductive mesh.
Claim 14
Dependent Claim
18 words
An apparatus according to claim 10, wherein said second conductive porous plate is formed by a conductive mesh.
Claim 15
Dependent Claim
18 words
An apparatus according to claim 11, wherein said second conductive porous plate is formed by a conductive mesh.
Claim 16
Dependent Claim
24 words
An apparatus according to claim 1, wherein said magnetic field source provides a magnetic field in said discharge chamber of 500 gauss or less.
Claim 17
Dependent Claim
24 words
An apparatus according to claim 10, wherein said magnetic field source provides a magnetic field in said discharge chamber of 500 gauss or less.
Claim 18
Dependent Claim
27 words
An apparatus according to claim 1, wherein said magnetic field source provides a magnetic field in said discharge chamber in the range of 25 to 35 gauss.
Claim 19
Dependent Claim
27 words
An apparatus according to claim 10, wherein said magnetic field source provides a magnetic field in said discharge chamber in the range of 25 to 35 gauss.
Claim 20
Dependent Claim
24 words
An apparatus according to claim 1, wherein said discharge chamber and said substrate chamber are maintained at a pressure of 0.1 Torr or less.
Claim 21
Dependent Claim
27 words
An apparatus according to claim 10, wherein pressure in said discharge chamber and said substrate chamber are maintained at a pressure of is 0.1 Torr or less.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-08-21 | 1993-02-20 | 1993-08-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-08-21 | 1997-02-20 | 1997-08-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-08-21 | 2001-02-20 | 2001-08-22 | $7700.00 | Window Closed / Lapsed |