Semiconductor light-emitting apparatus

Claim 1

In a semiconductor light-emitting apparatus, a semiconductor laser array device that has a substrate and a plurality of lasing filaments formed within an active layer that is disposed on said substrate, said lasing filaments being parallel to each other and vertical to the facets of said laser array device, and a mode-mixing device that has a striped optical waveguide with a certain length, said striped optical waveguide attaining an optical phase-coupling with said semiconductor laser array device by disposing said semiconductor laser array device and said mode-mixing device in such a manner that the level of the active layer of said semiconductor laser array device becomes equal to the level of the optical waveguide of said mode-mixing device, and said length l MM of said striped optical waveguide of said mode-mixing device being represented by the following inequality: ##EQU2## wherein P max indicates the maximum value of the distance between adjacent light-emitting spots of the semiconductor laser array device, θ indicates the full angle at half maximum of the far-field pattern in the direction that is parallel to the active layer constituting the lasing filaments of the semiconductor laser array device, and n MM indicates the equivalent refractive index of the optical waveguide of the mode-mixing device, whereby beams from said semiconductor laser array device are emitted form a light-emitting facet of said semiconductor light-emitting apparatus via said mode-mixing device, thereby attaining a near-field pattern with a minimized ripple rate on the optical intensity.