US4874494A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor manufacturing apparatus
Assignee: Foundation for Advancement of International Science
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Filing: 1987-06-06
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Granted: 1989-10-17
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Expires: 2007-06-06
Abstract
Abstract A bias-sputtering apparatus is characterized by having a radio-frequency power source and an exhaust unit and means for impressing a DC bias to at least one of the susceptor and the target electrodes. That is, the invention is a semiconductor manufacturing apparatus for depositing a thin film on the surface of a semiconductor substrate, which is characterized by having a radio-frequency power source and an exhaust unit and means for impressing a desired DC bias to at least the susceptor which holds the semiconductor substrate in the apparatus or the target which is constituted by the thin-film forming material.
Inventors
- 👤 Tadahiro Ohmi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:01
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/3435; C23C14/345; C23C14/35; H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32697; H01J37/32706; H01J37/34; H01J37/3402; H01J37/3405
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
82 words
A bias-sputtering apparatus for depositing a thin film on a substrate surface, comprising: a vacuum chamber connected to an exhaust unit; a sputtering target electrode to hold a target; a power source of a high frequency greater than 100 MHz connected to said target; means for applying a desired DC bias potential to at least one of a susceptor adapted to hold said substrate in the apparatus and said sputtering target electrode; and means for generating a magnetic field around said target.
Claim 2
Dependent Claim
82 words
A bias-sputtering apparatus for depositing a thin film on a substrate surface, comprising: a vacuum chamber connected to an exhaust unit; a sputtering target electrode to hold a target; a power source of a high frequency greater than 100 MHz connected to said target; means for applying a desired DC bias potential to at least one of a susceptor adapted to hold said substrate in the apparatus and said sputtering target electrode; and means for generating a magnetic field around said target.
Claim 3
Dependent Claim
29 words
A semiconductor manufacturing apparatus according to claim 1 wherein said apparatus further comprises: means to independently supply a desired DC bias to both of said susceptor and said target.
Claim 4
Independent Claim
65 words
A method for depositing a thin film on a substrate surface by bias-sputtering, comprising the steps of: mounting a target on a target electrode in a vacuum vessel; applying a power source of high frequency greater than 100 MHz to said target and further applying a desired DC bias potential to at least one of a susceptor serving to hold said substrate and said target.
Claim 5
Independent Claim
65 words
A method for depositing a thin film on a substrate surface by bias-sputtering, comprising the steps of: mounting a target on a target electrode in a vacuum vessel; applying a power source of high frequency greater than 100 MHz to said target and further applying a desired DC bias potential to at least one of a susceptor serving to hold said substrate and said target.
Claim 6
Dependent Claim
36 words
A method for depositing a thin film on a substrate surface by bias-sputtering according to claim 3, which further comprises: adjusting the DC bias potential so as to resputter only deposited atoms located at incorrect sites.
Claim 7
Dependent Claim
64 words
A method for depositing a thin film on a substrate surface by bias-sputtering according to claim 3, which further comprises: adjusting the bias potential applied to the susceptor to a zero value during the formation of its initial thickness ranging from about several tens to hundreds of A, and thereafter applying said desired DC bias potential to the susceptor to form said thin film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-10-16 | 1993-04-17 | 1993-10-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-10-16 | 1997-04-17 | 1997-10-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-10-16 | 2001-04-17 | 2001-10-17 | $7700.00 | Window Closed / Lapsed |