US4877651A
Expired / Lapsed
US
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Process for thermally depositing silicon nitride and silicon dioxide films onto a substrate
Assignee: Olin Corp
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Filing: 1988-05-31
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Granted: 1989-10-31
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Expires: 2008-05-31
Abstract
Abstract A thermal CVD process for forming silicon nitride-type or silicon dioxide-type films onto a substrate comprising the steps of: (a) introducing di-tert-butylsilane and at least one other reactant gas into a CVD reaction zone containing said substrate on which either a silicon nitride-type or silicon dioxide-type film is to be formed; (b) maintaining the temperature of said zone and said substrate from about 450° C. to about 900° C.; (c) maintaining the pressure in said zone from about 0.1 to about 10 Torr; and (d) passing said gases into contact with said substrate for a period of time sufficient to form a silicon nitride-type or silicon dioxide-type film thereon.
Inventors
- 👤 Thomas S. Dory
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 20:33
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; C03; C03C; C03C17/00; C03C17/22; C03C17/225; C03C17/23; C03C17/245; C23C16/34; C23C16/345; C03C2217/00; C03C2217/20; C03C2217/21; C03C2217/213; C03C2217/28; C03C2217/281; C03C2218/00; C03C2218/10; C03C2218/15; C03C2218/152
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
152 words
A thermal CVD process for forming silicon nitride film having a refractive index from about 2.0±0.2 or silicon dioxide film having a refractive index from about 1.46±0.2 onto a substrate comprising the steps of: (a) introducing di-tert-butylsilane and at least one other reactant gas capable of reacting with said di-tert-butylsilane to form silicon nitride or silicon dioxide into a CVD reaction zone containing said substrate on which either a silicon nitride or silicon dioxide-type film is to be formed; (b) maintaining the temperature of said zone and said substrate from about 450° C. to about 900° C.; (c) maintaining the pressure in said zone from about 0.1 to about 10 Torr; and (d) passing said gases into contact with said substrate for a period of time sufficient to form a silicon nitride film having a refractive index from about 2.0±0.2 or silicon dioxide film having a refractive index from about 1.46±0.2 thereon.
Claim 2
Dependent Claim
152 words
A thermal CVD process for forming silicon nitride film having a refractive index from about 2.0±0.2 or silicon dioxide film having a refractive index from about 1.46±0.2 onto a substrate comprising the steps of: (a) introducing di-tert-butylsilane and at least one other reactant gas capable of reacting with said di-tert-butylsilane to form silicon nitride or silicon dioxide into a CVD reaction zone containing said substrate on which either a silicon nitride or silicon dioxide-type film is to be formed; (b) maintaining the temperature of said zone and said substrate from about 450° C. to about 900° C.; (c) maintaining the pressure in said zone from about 0.1 to about 10 Torr; and (d) passing said gases into contact with said substrate for a period of time sufficient to form a silicon nitride film having a refractive index from about 2.0±0.2 or silicon dioxide film having a refractive index from about 1.46±0.2 thereon.
Claim 3
Dependent Claim
20 words
The thermal CVD process of claim 1 wherein silicon nitride film is formed and said other gas is anhydrous ammonia.
Claim 4
Dependent Claim
46 words
The thermal CVD process of claim 2 wherein the flow rate of said di-tert-butylsilane into said zone is from about 50 sccm to about 400 sccm and the flow rate into said zone of said anhydrous ammonia is from about 10 sccm to about 1000 sccm.
Claim 5
Dependent Claim
24 words
The thermal CVD process of claim 3 wherein said zone temperature and said substrate temperature are from about 575° C. to about 750° C.
Claim 6
Dependent Claim
19 words
The thermal CVD process of claim 1 wherein silicon dioxide film is formed and said other gas is oxygen.
Claim 7
Dependent Claim
41 words
The thermal CVD process of claim 5 wherein the flow rate of said di-tert-butylsilane is from about 50 sccm to about 400 sccm and the flow rate of oxygen into said zone is from about 10 sccm to about 1000 sccm.
Claim 8
Dependent Claim
24 words
The thermal CVD process of claim 6 herein said zone temperature and said substrate temperature are from about 450° C. to about 650° C.
Claim 9
Dependent Claim
20 words
The thermal CVD process of claim 1 wherein said zone pressure is from about 0.2 Torr. to about 5 Torr.
Claim 10
Dependent Claim
23 words
The thermal CVD process of claim 1 wherein said film rate is maintained at a rate from about 10 to about 500 Angstroms/minute.
Claim 11
Dependent Claim
130 words
A thermal CVD process for forming silicon nitride having a refractive index from about 2.0±0.2 film onto a substrate comprising the steps of: (a) introducing di-tert-butylsilane and at least one other reactant gas into a CVD reaction zone containing said substrate on which said silicon nitride film is to be formed, said other gas is capable of reacting with said di-tert-butylsilane to form silicon nitride; (b) maintaining the temperature of said zone and said substrate from about 575° C. to about 750° C.; (c) maintaining the pressure in said zone in the range from about 0.2 to about 5 Torr.; and (d) maintaining said gases into contact with said substrate for a period of time sufficient to form a silicon nitride film thereon having a refractive index from about 2.0±0.2.
Claim 12
Dependent Claim
130 words
A thermal CVD process for forming silicon nitride having a refractive index from about 2.0±0.2 film onto a substrate comprising the steps of: (a) introducing di-tert-butylsilane and at least one other reactant gas into a CVD reaction zone containing said substrate on which said silicon nitride film is to be formed, said other gas is capable of reacting with said di-tert-butylsilane to form silicon nitride; (b) maintaining the temperature of said zone and said substrate from about 575° C. to about 750° C.; (c) maintaining the pressure in said zone in the range from about 0.2 to about 5 Torr.; and (d) maintaining said gases into contact with said substrate for a period of time sufficient to form a silicon nitride film thereon having a refractive index from about 2.0±0.2.
Claim 13
Dependent Claim
15 words
The thermal CVD process of claim 10 wherein said other reactant gas is anhydrous ammonia.
Claim 14
Dependent Claim
43 words
The thermal CVD process of claim 11 wherein the flow rate of said di-tert-butylsilane into said zone is from about 50 sccm to about 200 sccm and the flow rate of said anhydrous ammonia is from about 15 sccm to about 800 sccm.
Claim 15
Dependent Claim
37 words
The thermal CVD process of claim 12 wherein said zone temperature and said substrate temperature are from about 600° C. to about 700° C. and said zone pressure is from about 0.6 Torr. to about 2 Torr.
Claim 16
Dependent Claim
127 words
A thermal CVD process for forming silicon dioxide having a refractive index from about 2.0±0.2 film onto a substrate comprising the steps of: (a) introducing di-tert-butylsilane and at least one other reactant gas into a CVD reaction zone containing said substrate on which a silicon dioxide film is to be formed, said other gas or gases are capable of reacting with said di-tert-butylsilane to form silicon dioxide; (b) maintaining the temperature of said zone and said substrate from about 475° C. to about 625° C.; (c) maintaining the presence in said zone from about 0.2 to about 5 Torr., and (d) passing said gases into contact with substrate for a period of time sufficient to form a silicon dioxide film thereon having a refractive index from 1.46±0.2.
Claim 17
Dependent Claim
127 words
A thermal CVD process for forming silicon dioxide having a refractive index from about 2.0±0.2 film onto a substrate comprising the steps of: (a) introducing di-tert-butylsilane and at least one other reactant gas into a CVD reaction zone containing said substrate on which a silicon dioxide film is to be formed, said other gas or gases are capable of reacting with said di-tert-butylsilane to form silicon dioxide; (b) maintaining the temperature of said zone and said substrate from about 475° C. to about 625° C.; (c) maintaining the presence in said zone from about 0.2 to about 5 Torr., and (d) passing said gases into contact with substrate for a period of time sufficient to form a silicon dioxide film thereon having a refractive index from 1.46±0.2.
Claim 18
Dependent Claim
14 words
The thermal CVD process of claim 14 wherein said other reactant gas is oxygen.
Claim 19
Dependent Claim
42 words
The thermal CVD process of claim 15 wherein the flow rate of said di-tert-butylsilane into said zone is from about 50 sccm to about 200 sccm and the flow rate of said oxygen is from about 15 sccm to about 800 sccm.
Claim 20
Dependent Claim
33 words
The thermal CVD process of claim 16 wherein said zone temperature is from about 500° C. to about 600° C. and said zone pressure is from about 0.4 Torr. to about 2 Torr.
Claim 21
Dependent Claim
34 words
The thermal CVD process of claim 1 wherein said substrate is selected from the group consisting of resin objects or films, glass objects or films, metal objects or films, and semiconductor layers or devices.
Claim 22
Dependent Claim
34 words
The thermal CVD process of claim 13 wherein said substrate is selected from the group consisting of resin objects or films, glass objects or films, metal objects or films, and semiconductor layers or devices.
Claim 23
Dependent Claim
34 words
The thermal CVD process of claim 17 wherein said substrate is selected from the group consisting of resin objects or films, glass objects or films, metal objects or films, and semiconductor layers or devices.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1992-10-30 | 1993-05-01 | 1993-10-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-10-30 | 1997-05-01 | 1997-10-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-10-30 | 2001-05-01 | 2001-10-31 | $7700.00 | Window Closed / Lapsed |