Sensors for selectively determining liquid-phase or gas-phase components using a heteropolysiloxane sensitive layer

Claim 2

Sensor for selectively determining liquid-phase or gas-phase components in the form of a field effect transistor, comprising a semiconductor substrate; at the surface of the semiconductor substrate at least two drain and source regions with a dopant type opposite the semiconductor substrate and separated by a channel; drain and source electrodes which are in electrically conducting contact with said drain and source regions; a gate insulator layer on the channel; a sensitive layer consisting of a heteropolysiloxane on the gate insulating layer, it being possible for the sensitive layer to come into contact with the components to be determined; and a gate or reference electrode.

Claim 3

Sensor as claimed in claim 1, wherein the gate insulator layer has a thickness of 30 to 200 nm.

Claim 4

Sensor as claimed in claim 1, wherein the sensitive layer has a thickness of 10 to 1,000 nm.

Claim 5

Sensor as claimed in claim 1, wherein the sensitive layer consists of a heteropolysiloxane which has been prepared by hydrolysis and condensation of at least one organofunctional silane of the general formula I SiR'.sub.b X.sub.c (R"Y).sub.(4-b-c) (I) in which R' denotes alkyl, alkenyl, aryl, aralkyl or alkylaryl, X represents hydrogen, halogen, alkoxy, acyloxy or --NR2 (R=hydrogen and/or alkyl), R" represents straight-chain or branched alkylene, which may be interrupted by oxygen or sulfur atoms or --NH-- groups, phenylene, alkylphenylene or alkylenephenylene, Y denotes halogen or an alkyl-substituted amino, alkyl-substituted anilino, aldehyde, alkylcarbonyl, arylcarbonyl, carboxyl, hydroxyl, mercapto, cyano, hydroxyphenyl, diazo, carboxylic acid alkyl ester, sulfonic acid (SO 3 H), phosphoric acid (PO 3 H 2 ), phosphino, dialkylphosphino, diarylphosphino, alkylarylphosphino, imidazolino, 4,5-dihydroimidazolino, pyridino or epoxy group, b has the value 0, 1 or 2, c has the value 1, 2 or 3 and (b+c) have the value 1, 2 or 3.

Claim 6

Sensor according to claim 4, wherein said heteropolysiloxane prepared by hydrolysis and condensation is prepared in the presence of a condensation catalyst.

Claim 7

Sensor according to claim 4, wherein said heteropolysiloxane prepared by hydrolysis and condensation is prepared in the presence of an organic solvent.

Claim 8

Sensor according to claim 4, wherein said heteropolysiloxane prepared by hydrolysis and condensation is prepared in the presence of a condensation catalyst and an organic solvent.

Claim 9

Sensor as claimed in claim 1, wherein the gate electrode is permeable to the components to be determined.

Claim 10

Sensor as claimed in claim 1, wherein the sensitive layer consists of a heteropolysiloxane which has been prepared by hydrolysis and condensation of (a) at least one organofunctional silane of the general formula I SiR'.sub.b X.sub.c (R"Y).sub.(4-b-c) (I) in which R' denotes alkyl, alkenyl, aryl, aralkyl or alkylaryl, X represents hydrogen, halogen, alkoxy, acyloxy or --NR2 (R=hydrogen and/or alkyl), R" represents straight-chain or branched alkylene, which may be interrupted by oxygen or sulfur atoms or --NH-- groups, phenylene, alkylphenylene or alkylenephenylene, Y denotes halogen or an alkyl-substituted amino, alkyl-substituted anilino, aldehyde, alkylcarbonyl, arylcarbonyl, carboxyl, hydroxyl, mercapto, cyano, hydroxyphenyl, diazo, carboxylic acid alkyl ester, sulfonic acid (SO 3 H), phosphoric acid (PO 3 H 2 ), phosphino, dialkylphosphino, diarylphosphino, alkylarylphosphino, imidazolino, 4,5-dihydroimidazolino, pyridino or epoxy group, b has the value 0, 1 or 2, c has the value 1, 2 or 3 and (b+c) have the value 1, 2 or 3; and at least one compound selected from the group consisting of: (b) at least one silicon-functional silane of the general formula II SiX.sub.4 (II) in which X has the above meaning, but not all the X radicals are hydrogen; (c) at least one organosilane of the general formula III SiR'.sub.a X.sub.(4-a) (III) in which X and R' have the above meaning and a has the value 1, 2 or 3; (d) at least one low-volatility oxide soluble in the reaction medium or at least one compound of an element of the main groups Ia to Va or the subgroups IVb or Vb of the periodic system which is soluble in the reaction medium and forms a low-volatility oxide; and (e) at least one metal compound, soluble in the reaction medium, which catalyzes a reaction of the species to be analyzed, and/or one organic compound, soluble in the reaction medium, which enters into a chemical reaction with the species to be analyzed.

Claim 11

Sensor according to claim 9, wherein said heteropolysiloxane prepared by hydrolysis and condensation is prepared in the presence of a condensation catalyst.

Claim 12

Sensor according to claim 9, wherein said heteropolysiloxane prepared by hydrolysis and condensation is prepared in the presence of an organic solvent.

Claim 13

Sensor according to claim 9, wherein said heteropolysiloxane prepared by hydrolysis and condensation is prepared in the presence of a condensation catalyst and an organic solvent.

Claim 14

Sensor for selectively determining liquid-phase or gas-phase components, comprising two or more electrodes and one or more dielectrics between said electrodes, at least one dielectric consisting of a heteropolysiloxane and being capable of coming into contact with the components to be determined.

Claim 15

Sensor for selectively determining liquid-phase or gas-phase components, comprising two or more electrodes and one or more dielectrics between said electrodes, at least one dielectric consisting of a heteropolysiloxane and being capable of coming into contact with the components to be determined.

Claim 16

Sensor as claimed in claim 13, wherein the electrodes have an interdigitate structure.

Claim 17

Sensor as claimed in claim 13, wherein an electrode of the sensor is connected in an electrically conducting manner with the gate electrode of a field effect transistor.

Claim 18

Sensor as claimed in claim 13, wherein the dielectric consists of a heteropolysiloxane which has been prepared by hydrolysis and condensation of at least one organofunctional silane of the general formula I SiR'.sub.b X.sub.c (R"Y).sub.(4-b-c) ( 1) in which R' denotes alkyl, alkenyl, aryl, aralkyl and alkylaryl, X represents hydrogen, halogen, alkoxy, acyloxy or --NR 2 (R=hydrogen and/or alkyl), R" represents straight-chain or branched alkylene, which may be interrupted by oxygen or sulfur atoms or --NH-- groups, phenylene, alkylphenylene or alkylenephenylene, Y denotes halogen or an alkyl-substituted amino, alkyl-substituted anilino, aldehyde, alkylcarbonyl, arylcarbonyl, carboxyl, hydroxyl, mercapto, cyano, hydroxyphenyl, diazo, carboxylic acid alkyl ester, sulfonic acid (SO 3 H), phosphoric acid (PO 3 H 2 ), phosphino, dialkylphosphino, diarylphosphino, alkylarylphosphino, imidazolino, 4,5-dihydroimidazolino, pyridino or epoxy group, b has the value 0, 1 or 2, c has the value 1, 2 or 3 and (b+c) have the value 1, 2 or 3.

Claim 19

Sensor according to claim 16, wherein said heteropolysiloxane prepared by hydrolysis and condensation is prepared in the presence of a condensation catalyst.

Claim 20

Sensor according to claim 16, wherein said heteropolysiloxane prepared by hydrolysis and condensation is prepared in the presence of an organic solvent.

Claim 21

Sensor according to claim 16, wherein said heteropolysiloxane prepared by hydrolysis and condensation is prepared in the presence of a condensation catalyst and an organic solvent.

Claim 22

Sensor as claimed in claim 13, wherein the dielectric consists of a heteropolysiloxane which has been prepared by hydrolysis and condensation of (a) at least one organofunctional silane of the general formula I SiR'.sub.b X.sub.c (R"Y).sub.(4-b-c) ( 1) in which R' denotes alkyl, alkenyl, aryl, aralkyl or alkylaryl, X represents hydrogen, halogen, alkoxy, acyloxy or --NR 2 (R=hydrogen and/or alkyl), R" represents straight-chain or branched alkylene, which may be interrupted by oxygen or sulfur atoms or --NH-- groups, phenylene, alkylphenylene or alkylenephenylene, Y denotes halogen or an alkyl-substituted amino, alkyl-substituted anilino, aldehyde, alkylcarbonyl, arylcarbonyl, carboxyl, hydroxyl, mercapto, cyano, hydroxyphenyl, diazo, carboxylic acid alkyl ester, sulfonic acid (SO 3 H), phosphoric acid (PO 3 H 2 ), phosphino, dialkylphosphino, diarylphosphino, alkylarylphosphino, imidazolino, 4,5-dihydroimidazolino, pyridino or epoxy group, b has the value 0, 1 or 2, c has the value 1, 2 or 3 and (b+c) have the value 1, 2 or 3; and at least one compound selected from the group consisting of: (b) at least one silicon-functional silane of the general formula II SiX.sub.4 (II) in which X has the above meaning, but not all the X radicals are hydrogen; (c) at least one organosilane of the general formula III SiR'.sub.a X.sub.(4-a) (III) in which X and R' have the above meaning and a has the value 1, 2 or 3; (d) at least one low-volatility oxide soluble in the reaction medium or at least one compound of an element of the main groups 1a to Va or of the subgroups IVb or Vb of the periodic system which is soluble in the reaction medium and forms a low-volatility oxide; and (e) at least one metal compound, soluble in the reaction medium, which catalyzes a reaction of the species to be analyzed, and/or organic compound, soluble in the reaction medium, which enters into a chemical reaction with the species to be analyzed.

Claim 23

Sensor according to claim 20, wherein said heteropolysiloxane prepared by hydrolysis and condensation is prepared in the presence of a condensation catalyst.

Claim 24

Sensor according to claim 20, wherein said heteropolysiloxane prepared by hydrolysis and condensation is prepared in the presence of an organic solvent.

Claim 25

Sensor according to claim 20, wherein said heteropolysiloxane prepared by hydrolysis and condensation is prepared in the presence of a condensation catalyst and an organic solvent.

Claim 26

Arrangement for simultaneously determining several liquid-phase or gas-phase components, comprising several sensors for selectively determining liquid-phase or gas-phase components with different selective sensitivity for the components to be determined in each case, each sensor being in the form of a field effect transistor, comprising a semiconductor substrate, at the surface of the semiconductor substrate at least two drain and source regions with a dopant type opposite the semiconductor substrate and separated by a channel, drain and source electrodes which are in electrically conducting contact with said drain and source regions, a gate insulating layer, a sensitive layer comprising a heteropolysiloxane on the gate insulating layer it being possible for the sensitive layer to come into contact with the components to be determined, and a gate or reference electrode.

Claim 27

Arrangement for simultaneously determining several liquid-phase or gas-phase components, comprising several sensors for selectively determining liquid-phase or gas-phase components with different selective sensitivity for the components to be determined in each case, each sensor being in the form of a field effect transistor, comprising a semiconductor substrate, at the surface of the semiconductor substrate at least two drain and source regions with a dopant type opposite the semiconductor substrate and separated by a channel, drain and source electrodes which are in electrically conducting contact with said drain and source regions, a gate insulating layer, a sensitive layer comprising a heteropolysiloxane on the gate insulating layer it being possible for the sensitive layer to come into contact with the components to be determined, and a gate or reference electrode.

Claim 28

Arrangement for simultaneously determining several liquid-phase or gas-phase components, comprising several sensors for selectively determining liquid-phase or gas-phase components with different selective sensitivity for the components to be determined in each case, each sensor comprising two or more electrodes and one or more dielectrics between said electrodes, at least one dielectric consisting of a heteropolysiloxane and being capable of coming into contact with the components to be determined.

Claim 29

Arrangement for simultaneously determining several liquid-phase or gas-phase components, comprising several sensors for selectively determining liquid-phase or gas-phase components with different selective sensitivity for the components to be determined in each case, each sensor comprising two or more electrodes and one or more dielectrics between said electrodes, at least one dielectric consisting of a heteropolysiloxane and being capable of coming into contact with the components to be determined.

Claim 30

Arrangement as claimed in claim 25 with different selective sensitivity for the components to be determined in each case, wherein an electrode of each sensor is connected in an electrically conducting manner with the gate electrode of a field effect transistor.