US4880684A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Sealing and stress relief layers and use thereof
Assignee: International Business Machines Corp
•
Filing: 1988-03-11
•
Granted: 1989-11-14
•
Expires: 2008-03-11
Abstract
Abstract Sealing and stress relief are provided to a low-fracture strength glass-ceramic substrate. Hermeticity is addressed through the use of capture pads in alignment with vias and through polymer overlays with interconnection between the underlying via or pad metallurgy and the device, chip, wire or pin bonded to the surface of the layer. Multilevel structures are taught along with a self-aligned sealing and wiring process.
Inventors
- 👤 David W. Boss
- 👤 Timothy W. Carr
- 👤 Derry J. Dubetsky
- 👤 George M. Greenstein
- 👤 Warren D. Grobman
- 👤 Carl P. Hayunga
- 👤 Amanda H. Kumar
- 👤 Walter F. Lange
- 👤 Robert H. Massey
- 👤 Paul H. Palmateer
- 👤 John A. Romano
- 👤 Da-Yuan Shih
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 23:12
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/62; H10W70/63; H10W70/635; Y; Y10; Y10S; Y10S428/00; Y10S428/901; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/49155; Y10T29/49163; Y10T29/49165; Y10T428/00; Y10T428/12; Y10T428/12389; Y10T428/12396; Y10T428/24; Y10T428/24802; Y10T428/24917; Y10T428/24926; Y10T428/31504; Y10T428/31678; Y10T428/31681
Claims Analysis
Total Claims: 67
Claim 1
Independent Claim
88 words
A structure for electrically interconnecting a substrate having conductive vias therein and associated articles comprising: at least one first conductive bonding pad disposed on the surface of said substrate in alignment with said conductive vias; at least one layer of polymeric material disposed on the surface of said substrate covering said first bonding pads; at least one second conductive bonding pad deposited on said at least one polymeric layer; and at least one conductive medium disposed in said polymeric material contacting said first and said second bonding pads.
Claim 2
Dependent Claim
88 words
A structure for electrically interconnecting a substrate having conductive vias therein and associated articles comprising: at least one first conductive bonding pad disposed on the surface of said substrate in alignment with said conductive vias; at least one layer of polymeric material disposed on the surface of said substrate covering said first bonding pads; at least one second conductive bonding pad deposited on said at least one polymeric layer; and at least one conductive medium disposed in said polymeric material contacting said first and said second bonding pads.
Claim 3
Dependent Claim
21 words
The structure of claim 1, wherein said first bonding pad has a diameter substantially greater than the diameter of said via.
Claim 4
Dependent Claim
14 words
The structure of claim 1, wherein said substrate comprises at least a crystallizable glass.
Claim 5
Dependent Claim
13 words
The structure of claim 1, wherein said conductive vias comprise a copper-based metallurgy.
Claim 6
Dependent Claim
21 words
The structure of claim 1, wherein said first bonding pad is comprised of a material having good adhesion to the substrate.
Claim 7
Dependent Claim
11 words
The structure of claim 1 wherein first bonding pad is Cu-based.
Claim 8
Dependent Claim
22 words
The structure of claim 1, wherein said second bonding pad is comprised of a material exhibiting good adhesion to the polymeric material.
Claim 9
Dependent Claim
21 words
The structure of claim 1, wherein said first conductive bonding pad and said conductive medium are comprised of a co-sintered stud.
Claim 10
Dependent Claim
51 words
The structure of claim 1, wherein said polymeric layer comprises a multilayer structure comprising at least a first layer abutting said substrate and having good adhesion to said substrate, and a second layer on which said second pads are deposited said second layer having good adhesion to said second bonding pads.
Claim 11
Dependent Claim
31 words
The structure of claim 9, wherein said multilayer structure also comprises at least one intermediate layer of polymeric material disposed between said first and second layers and having superior cushioning properties.
Claim 12
Dependent Claim
33 words
The structure of claim 9, wherein said polymeric multilayer structure comprises a first layer of BTDA-APB derived polyimide, an intermediate layer of PMDA-ODA derived polyimide and a second layer of BTDA-APB derived polyimide.
Claim 13
Dependent Claim
18 words
The structure of claim 1, wherein said conductive medium comprises a selectively doped section of said polymeric material.
Claim 14
Dependent Claim
73 words
A bonding structure for a multilayer ceramic substrate having sintered internal metallurgy therein and extending to the top and bottom surfaces thereof comprising: at least one layer of non-porous material disposed on each of the top and bottom surfaces of said substrate, said layer having conductive regions in contact with said internal metallurgy extending to said surfaces and non-conductive regions between said conductive regions; and bonding sites in contact with said conductive regions.
Claim 15
Dependent Claim
73 words
A bonding structure for a multilayer ceramic substrate having sintered internal metallurgy therein and extending to the top and bottom surfaces thereof comprising: at least one layer of non-porous material disposed on each of the top and bottom surfaces of said substrate, said layer having conductive regions in contact with said internal metallurgy extending to said surfaces and non-conductive regions between said conductive regions; and bonding sites in contact with said conductive regions.
Claim 16
Dependent Claim
16 words
The structure of claim 13 wherein said bonding sites are the surfaces of said conductive regions.
Claim 17
Dependent Claim
24 words
The structure of claim 13 wherein said bonding sites are disposed on the surface of said non-porous layer in contact with said conductive regions.
Claim 18
Dependent Claim
21 words
The structure of claim 13 wherein said conductive regions comprise the same metallurgy as said internal metallurgy and are cosintered therewith.
Claim 19
Dependent Claim
17 words
The structure of claim 13 wherein said conductive regions comprise metal-based conductors disposed in said non-porous layer.
Claim 20
Dependent Claim
13 words
The structure of claim 13 wherein said non-porous layer comprises a polymeric material.
Claim 21
Dependent Claim
17 words
The structure of claim 18 wherein said conductive regions comprise metal-based conductors disposed in said polymeric material.
Claim 22
Dependent Claim
21 words
The structure of claim 18 wherein said conductive regions comprise the same metallurgy as said internal metallurgy and are consintered therewith.
Claim 23
Dependent Claim
13 words
The structure of claim 13 wherein said non-porous layer comprises a semiconductive material.
Claim 24
Dependent Claim
11 words
The structure of claim 13 wherein said non-porous layer comprises polysilicon.
Claim 25
Dependent Claim
21 words
The structure of claim 13 wherein said non-porous material comprises chalcogenide glass and wherein said conductive regions comprise fused chalcogenide glass.
Claim 26
Dependent Claim
43 words
The structure of claim 15 wherein said non-porous layer comprises a multilayer polymer structure comprising at least a first layer disposed on said substrate surface having good adhesion to said substrate surface and a second layer having good adhesion to said bonding sites.
Claim 27
Dependent Claim
14 words
The structure of claim 24 additionally comprising an intermediate polymeric layer having high elasticity.
Claim 28
Dependent Claim
22 words
The structure of claim 13 additionally comprising contact pads on the surface of said substrate in contact with said internal metallurgy surfaces.
Claim 29
Dependent Claim
23 words
The structure of claim 26 wherein the diameter of said contact pad is substantially greater than the diameter of said internal metallurgy surfaces.
Claim 30
Dependent Claim
18 words
The structure of claim 13 wherein said substrate comprises at least a glass ceramic comprising a crystalline phase.
Claim 31
Dependent Claim
15 words
The structure of claims 13, 16 and 17 wherein said metallurgy comprises a copper-based metallurgy.
Claim 32
Dependent Claim
119 words
A structure for mounting interconnections and semiconductor devices comprising: an insulating substrate having internal metallurgy co-sintered therewith, at least one portion of said internal metallurgy extending to at least one of said top and bottom surfaces of said substrate; a layer of non-porous material deposited on at least one of the top and bottom surfaces of said substrate, said layer comprising at least one area of non-conductivity and at least one area of conductivity, said at least one area of conductivity being in contact with said portion of said internal metallurgy which extends to said substrate surfaces; and at least one metal-based bonding pad deposited onto said non-porous layer in contact with said at least one area of conductivity.
Claim 33
Dependent Claim
119 words
A structure for mounting interconnections and semiconductor devices comprising: an insulating substrate having internal metallurgy co-sintered therewith, at least one portion of said internal metallurgy extending to at least one of said top and bottom surfaces of said substrate; a layer of non-porous material deposited on at least one of the top and bottom surfaces of said substrate, said layer comprising at least one area of non-conductivity and at least one area of conductivity, said at least one area of conductivity being in contact with said portion of said internal metallurgy which extends to said substrate surfaces; and at least one metal-based bonding pad deposited onto said non-porous layer in contact with said at least one area of conductivity.
Claim 34
Dependent Claim
13 words
The structure of claim 30, wherein said non-porous material is a semiconductive material.
Claim 35
Dependent Claim
13 words
The structure of claim 30, wherein said non-porous material comprises a polysilicon material.
Claim 36
Dependent Claim
39 words
The structure of claim 30, wherein said non-porous material comprises a polymeric material having at least one selectively doped area of conductivity in contact with said at least one portion of said internal metallurgy extending to said substrate surfaces.
Claim 37
Dependent Claim
39 words
The structure of claim 30, wherein said non-porous material comprises a metal-oxide layer having at least one selected non-oxidized area of conductivity in contact with said at least one portion of said internal metallurgy extending to said substrate surfaces.
Claim 38
Dependent Claim
55 words
The structure of claim 30, wherein said non-porous material has a fixed resistivity and the thickness of said layer is less than or equal to the minimum distance required for conduction in said material, and wherein said distance between bonding pads is greater than the minimum distance required for low resistivity conduction in said material.
Claim 39
Dependent Claim
48 words
The structure of claim 30, wherein the non-porous material is chosen to have a resistivity which is insufficient to prevent conduction across the thickness of said layer, between said at least one internal metallurgy portion and said contacted bonding pad, but sufficient to prevent conduction between bonding pads.
Claim 40
Independent Claim
122 words
A method of providing a sealing and mounting structure on a fired substrate, said substrate having sintered metal-based vias therein and extending to the surfaces thereof, comprising: selectively depositing at least one first metal-based conductor to the surface of said substrate contacting said vias; depositing at least one layer of polymeric material on the surface of said substrate and said first metal-based conductors; selectively etching at least one opening in said polymeric material to expose at least a portion of said at least one first metal-based conductor; and selectively providing at least one second metal-based conductor to the surface of said polymeric layer about said at least one opening, each of said second metal-based conductors being aligned with one of said openings.
Claim 41
Independent Claim
122 words
A method of providing a sealing and mounting structure on a fired substrate, said substrate having sintered metal-based vias therein and extending to the surfaces thereof, comprising: selectively depositing at least one first metal-based conductor to the surface of said substrate contacting said vias; depositing at least one layer of polymeric material on the surface of said substrate and said first metal-based conductors; selectively etching at least one opening in said polymeric material to expose at least a portion of said at least one first metal-based conductor; and selectively providing at least one second metal-based conductor to the surface of said polymeric layer about said at least one opening, each of said second metal-based conductors being aligned with one of said openings.
Claim 42
Dependent Claim
26 words
The method of claim 37, further comprising the step of depositing at least one intermediate metal-based conductor to said at least one opening in said material.
Claim 43
Dependent Claim
31 words
The method of claim 38, wherein said deposition of said at least one intermediate metal-based conductor is conducted simultaneously with said selective provision of said at least one second metal-based conductor.
Claim 44
Dependent Claim
31 words
The method of claim 38, wherein said deposition of said at least one intermediate metal-based conductor is conducted prior to said selective provision of said at least one second metal-based conductor.
Claim 45
Independent Claim
169 words
A method for providing a sintered insulative substrate from metallized greensheets, said substrate having metal-based internal conductors wherein said metal-based conductors protrude above the surface of said substrate comprising the steps of: stacking said greensheets in alignment with each other; providing at least one metallized sheet to at least one of said top and bottom surfaces of said stack, said metallized sheet comprising a sheet material which will not sinter to said stack at the coalescence temperature of said greensheets, and having a metal-based pattern of the same metallurgy as said metal-based internal metallurgy and said pattern features being in alignment with said metal-base internal metallurgy; laminating said stack with said at least one metallized sheet; firing said laminated structure to a temperature sufficient to effect coalescence of greensheets and to sinter said metal-based internal metallurgy and said metal-based pattern, but not sufficient to melt said metallurgy; and removing said sheet material from the surface of said fired substrate, while not removing said sintered metal-based pattern from said surface.
Claim 46
Independent Claim
169 words
A method for providing a sintered insulative substrate from metallized greensheets, said substrate having metal-based internal conductors wherein said metal-based conductors protrude above the surface of said substrate comprising the steps of: stacking said greensheets in alignment with each other; providing at least one metallized sheet to at least one of said top and bottom surfaces of said stack, said metallized sheet comprising a sheet material which will not sinter to said stack at the coalescence temperature of said greensheets, and having a metal-based pattern of the same metallurgy as said metal-based internal metallurgy and said pattern features being in alignment with said metal-base internal metallurgy; laminating said stack with said at least one metallized sheet; firing said laminated structure to a temperature sufficient to effect coalescence of greensheets and to sinter said metal-based internal metallurgy and said metal-based pattern, but not sufficient to melt said metallurgy; and removing said sheet material from the surface of said fired substrate, while not removing said sintered metal-based pattern from said surface.
Claim 47
Independent Claim
185 words
A method for fabricating an hermetic sintered substrate having metal-based vias from metallized greensheets comprising the steps of: stacking said greensheets in alignment with each other; providing at least one metallized sheet to at least one of said top and bottom surfaces of said stack, said metallized sheet being comprised of a sheet material which will not sinter to said stack at the coalescence temperatures of said greensheets, and having a metal-based pattern of the same metallurgy as said metal-based vias and said pattern features being in alignment with said metal-based vias; laminating said stack with said at least one metallized sheet; firing said laminated structure to a temperature sufficient to cause said greensheets to coalesce and to sinter said metal-based vias and said metal-based pattern, but not sufficient to melt said metallurgy; removing said sheet material from the surface of said fired stack, said sintered metal-based pattern remaining as a pattern of studs above said surface; depositing a layer of conformable insulative material to the surface of said fired stack; and planarizing said conformable material to the level of the surface of said studs.
Claim 48
Independent Claim
185 words
A method for fabricating an hermetic sintered substrate having metal-based vias from metallized greensheets comprising the steps of: stacking said greensheets in alignment with each other; providing at least one metallized sheet to at least one of said top and bottom surfaces of said stack, said metallized sheet being comprised of a sheet material which will not sinter to said stack at the coalescence temperatures of said greensheets, and having a metal-based pattern of the same metallurgy as said metal-based vias and said pattern features being in alignment with said metal-based vias; laminating said stack with said at least one metallized sheet; firing said laminated structure to a temperature sufficient to cause said greensheets to coalesce and to sinter said metal-based vias and said metal-based pattern, but not sufficient to melt said metallurgy; removing said sheet material from the surface of said fired stack, said sintered metal-based pattern remaining as a pattern of studs above said surface; depositing a layer of conformable insulative material to the surface of said fired stack; and planarizing said conformable material to the level of the surface of said studs.
Claim 49
Dependent Claim
32 words
The method of claim 41 and 42, wherein said substrate comprises an insulating material at least comprised of a crystallizable glass and wherein said metal-based vias and metal-based pattern are copper based.
Claim 50
Dependent Claim
11 words
The method of claim 43, wherein said sheet material is alumina.
Claim 51
Dependent Claim
29 words
The method of claim 44, wherein said laminated structure is fired to a temperature sufficient to effect crystallization of said crystallizable glass, but not sufficient to sinter said alumina.
Claim 52
Dependent Claim
37 words
The method of claim 42, further comprising the step of depositing metal-based bonding pads to the surface of said conformable layer, each of said bonding pads being in contact with the surface of one of said studs.
Claim 53
Independent Claim
80 words
A method for providing a sealing and mounting structure on a fired hermetic substrate, said substrate having internal conductors, the surfaces of some of which extend to the top and bottom substrate surfaces, comprising the steps of: depositing a layer of non-porous material on at least one of said top and bottom surfaces of said substrate; and providing areas of conductivity in said non-porous material in contact with said conductor surfaces and areas of non-conductivity between said areas of conductivity.
Claim 54
Independent Claim
80 words
A method for providing a sealing and mounting structure on a fired hermetic substrate, said substrate having internal conductors, the surfaces of some of which extend to the top and bottom substrate surfaces, comprising the steps of: depositing a layer of non-porous material on at least one of said top and bottom surfaces of said substrate; and providing areas of conductivity in said non-porous material in contact with said conductor surfaces and areas of non-conductivity between said areas of conductivity.
Claim 55
Dependent Claim
23 words
The method of claim 47, wherein said material is semiconductive and said providing of said areas of conductivity comprises selectively doping said material.
Claim 56
Dependent Claim
10 words
The method of claim 48, wherein said material is polysilicon.
Claim 57
Dependent Claim
23 words
The method of claim 47, wherein said material is chalcogenide glass and said providing of said conductive areas comprises selectively fusing said glass.
Claim 58
Dependent Claim
25 words
The method of claim 47, wherein said material is a polymer and said providing of said areas of conductivity comprises selectively doping said polymeric material.
Claim 59
Dependent Claim
36 words
The method of claim 47, wherein said providing of said areas of conductivity is preceded by the step of; selectively depositing a mask on said substrate surfaces in alignment with said surfaces of said internal conductors.
Claim 60
Dependent Claim
30 words
The method of claim 47, additionally comprising the step of; depositing conductive bonding pads to the surface of said non-porous layer in alignment with said surfaces of said internal conductors.
Claim 61
Dependent Claim
25 words
The method of claim 52, wherein said selectively depositing of said mask additionally serves to deposit conductive bonding pads to the surfaces of said substrate.
Claim 62
Dependent Claim
54 words
The method of claim 47, wherein said non-porous material is conductive and wherein said providing of areas of conductivity and non-conductivity comprises; depositing a mask on said material in contact with said areas of conductivity which are in contact with said surfaces of said internal conductors; rendering said exposed areas of said material non-conductive.
Claim 63
Dependent Claim
19 words
The method of claim 55, wherein said material is metallic and wherein said rendering step comprises oxidizing said metal.
Claim 64
Dependent Claim
40 words
The method of claim 47, wherein said providing of said areas of conductivity comprises the steps of; selectively etching openings in said deposited material in alignment with said surfaces of said internal conductors; and filling said openings with conductive material.
Claim 65
Dependent Claim
12 words
The method of claim 57, wherein said selective etching comprises laser etching.
Claim 66
Dependent Claim
33 words
The method of claim 53, wherein said filling of said openings is achieved by; depositing conductive bonding pads to the surface of said material in alignment with said surfaces of said internal conductors.
Claim 67
Dependent Claim
26 words
The method of claim 47, additionally comprising the step of depositing contact pads to the surfaces of said internal conductors prior to depositing said non-porous material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-11-13 | 1993-05-15 | 1993-11-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-11-13 | 1997-05-15 | 1997-11-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-11-13 | 2001-05-15 | 2001-11-14 | $7700.00 | Window Closed / Lapsed |