US4884119A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated multiple quantum well photonic and electronic devices
Assignee: Nokia Bell Labs
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Filing: 1988-04-22
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Granted: 1989-11-28
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Expires: 2008-04-22
Abstract
Abstract In an optoelectronic integrated circuit, an electronic device is integrated with an optical device by fabricating the electronic device directly in a doped semiconductor layer of the optical device. The optical devices contemplated for use include at least a region of multiple low-doped or intrinsic quantum well layers; electronic devices include bipolar and field-effect transistors. Resulting integrated circuits exhibit a high degree of planarity.
Inventors
- 👤 David A. B. Miller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:13
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; G; G02; G02F; G02F3/00; G02F3/02; G02F3/028
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
110 words
An optoelectronic integrated circuit comprising an optical device and an electronic device said optical device including a first doped semiconductor layer, a second doped semiconductor layer, a conductivity type for said first doped semiconductor layer being opposite to the conductivity type for said second doped semiconductor layer, and an intrinsic region interposed between said first and second doped semiconductor layers, and said electronic device including at least first and second doped semiconductor regions confined to said first doped semiconductor layer, said electronic device adjacent to said optical device and said first doped semiconductor layer being electrically continuous over a region substantially including both said electronic device and said optical device.
Claim 2
Dependent Claim
110 words
An optoelectronic integrated circuit comprising an optical device and an electronic device said optical device including a first doped semiconductor layer, a second doped semiconductor layer, a conductivity type for said first doped semiconductor layer being opposite to the conductivity type for said second doped semiconductor layer, and an intrinsic region interposed between said first and second doped semiconductor layers, and said electronic device including at least first and second doped semiconductor regions confined to said first doped semiconductor layer, said electronic device adjacent to said optical device and said first doped semiconductor layer being electrically continuous over a region substantially including both said electronic device and said optical device.
Claim 3
Dependent Claim
20 words
The optoelectronic integrated circuit as defined in claim 1 wherein said intrinsic region includes at least one quantum well region.
Claim 4
Dependent Claim
42 words
The optoelectronic integrated circuit as defined in claim 2 wherein said electronic device includes first, second and third regions confined to said first doped semiconductor layer, and means for applying an electrical signal to each of said first, second and third regions.
Claim 5
Dependent Claim
28 words
The optoelectronic integrated device defined in claim 2 wherein said first and second doped semiconductor layers and said intrinsic region consist of compositions selected from Group III-V compounds.
Claim 6
Dependent Claim
119 words
An optoelectronic integrated circuit comprising an optical device and an electronic device, said optical device including a first doped semiconductor layer, a second doped semiconductor layer, a conductivity type for said first doped semiconductor layer being opposite to the conductivity type for said second doped semiconductor layer, and an intrinsic region interposed between said first and second doped semiconductor layers, said electronic device including at least first and second doped semiconductor regions confined to said first doped semiconductor layer, said electronic device adjacent to said optical device, said first doped semiconductor layer being electrically continuous over a region substantially including both said electronic device and said optical device, and said electronic device for controlling operation of said optical device.
Claim 7
Dependent Claim
119 words
An optoelectronic integrated circuit comprising an optical device and an electronic device, said optical device including a first doped semiconductor layer, a second doped semiconductor layer, a conductivity type for said first doped semiconductor layer being opposite to the conductivity type for said second doped semiconductor layer, and an intrinsic region interposed between said first and second doped semiconductor layers, said electronic device including at least first and second doped semiconductor regions confined to said first doped semiconductor layer, said electronic device adjacent to said optical device, said first doped semiconductor layer being electrically continuous over a region substantially including both said electronic device and said optical device, and said electronic device for controlling operation of said optical device.
Claim 8
Dependent Claim
20 words
The optoelectronic integrated circuit as defined in claim 5 wherein said intrinsic region includes at least one quantum well region.
Claim 9
Dependent Claim
42 words
The optoelectronic integrated circuit as defined in claim 6 wherein said electronic device includes first, second and third regions confined to said first doped semiconductor layer, and means for applying an electrical signal to each of said first, second and third regions.
Claim 10
Dependent Claim
28 words
The optoelectronic integrated circuit defined in claim 6 wherein said first and second doped semiconductor layers and said intrinsic region consist of compositions selected from Group III-V compounds.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-11-27 | 1993-05-29 | 1993-11-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-11-27 | 1997-05-29 | 1997-11-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-11-27 | 2001-05-29 | 2001-11-28 | $7700.00 | Window Closed / Lapsed |