US4886565A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Reactive ion etching apparatus
Assignee: JSR Corp
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Filing: 1989-02-07
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Granted: 1989-12-12
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Expires: 2009-02-07
Abstract
Abstract A reactive ion etching apparatus used in the manufacturing process of semiconductor elements such as ICs and LSIs is herein disclosed. The material to be etched is supported by a chucking device disposed on a negative electrode and in this apparatus, a magnetic field parallel to the surface of the material to be etched is generated. The reactive ion etching is carried out while cooling the negative electrode to a temperature of not more than 0° C.
Inventors
- 👤 Mitsunobu Koshiba
- 👤 Keiichi Yamada
- 👤 Yoshiyuki Harita
- 👤 Shin'ichi Kawamura
- 👤 Yuuji Furuto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 22:22
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32532; H01J37/32009; H01J37/32082; H01J37/3266; H01J37/32669; H01J37/32715; H01J37/32724; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421; H10P72/70; H10P72/78; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/334; H01J2237/3341
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
54 words
A reactive ion etching apparatus comprising means for generating magnetic field parallel to the surface of a material to be etched; a negative electrode; supporting means mounted on said negative electrode for supporting the material to be etched; and means for cooling said negative electrode to a temperature of not more than 0° C.
Claim 2
Dependent Claim
54 words
A reactive ion etching apparatus comprising means for generating magnetic field parallel to the surface of a material to be etched; a negative electrode; supporting means mounted on said negative electrode for supporting the material to be etched; and means for cooling said negative electrode to a temperature of not more than 0° C.
Claim 3
Dependent Claim
28 words
A reactive ion etching apparatus according to claim 1 wherein said negative electrode is cooled to a temperature ranging from 0° to -40° C. by said cooling means.
Claim 4
Dependent Claim
28 words
A reactive ion etching apparatus according to claim 1 wherein said negative electrode is cooled to a temperature ranging form -20° to -40° C. by said cooling means.
Claim 5
Dependent Claim
18 words
A reactive ion etching apparatus according to claim 1 wherein said supporting means is an electrostatic chucking device.
Claim 6
Dependent Claim
31 words
A reactive ion etching apparatus according to claim 4 wherein said electrostatic chucking device comprises a piece of plate-like electrode and a ferroelectric substance in which said plate-like electrode is embedded.
Claim 7
Dependent Claim
37 words
A reactive ion etching apparatus according to claim 5 wherein said ferroelectric substance is provided thereon with a plurality of grooves and the apparatus further comprises means for introducing an inert gas into said plurality of grooves.
Claim 8
Dependent Claim
16 words
A reactive ion etching apparatus according to claim 6 wherein said inert gas is helium gas.
Claim 9
Dependent Claim
56 words
A reactive ion etching apparatus according to claim 6 wherein the depth of said plurality of grooves ranges from 5 μm to 1 mm and the total area of the grooves ranges from 10 to 90% of the chucked area of the material to be etched when the material is chucked with said electrostatic chucking device.
Claim 10
Dependent Claim
47 words
A reactive ion etching apparatus according to claim 1 wherein said means for generating magnetic field parallel to the surface of the material to be etched comprises a permanent magnet disposed in said negative electrode and an auxiliary magnet disposed above said negative electrode through a space.
Claim 11
Dependent Claim
25 words
A reactive ion etching apparatus according to claim 1 wherein said material to be etched is cooled to a temperature not more than 40° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-12-11 | 1993-06-12 | 1993-12-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-12-11 | 1997-06-12 | 1997-12-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-12-11 | 2001-06-12 | 2001-12-12 | $7700.00 | Window Closed / Lapsed |