US4891332A
Expired / Lapsed
US
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Method of manufacturing a semiconductor device comprising a circuit element formed of carbon doped polycrystalline silicon
Assignee: US Philips Corp
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Filing: 1986-04-11
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Granted: 1990-01-02
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Expires: 2006-04-11
Abstract
Abstract The invention relates to a semiconductor device having a semiconductor body which comprises a circuit element having doped polycrystalline silicon. The doping comprises carbon in a concentration higher than 1 ppm. Polysilicon thus doped has properties which are not influenced by temperature treatments of the semiconductor body. Dopant is gaseous unsaturated hydrocarbon, e.g. acetylene.
Inventors
- 👤 Jan Bloem
- 👤 Wilhelmus A. P. Claassen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 06:49
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D62/00; H10D62/40; H10D62/80; H10D62/83; H10D62/834; H10D64/01314; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3408; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P14/40; H10P14/416; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/918
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
61 words
A method of manufacturing a semiconductor device having a semiconductor body comprising a circuit element formed of polycrystalline silicon doped with carbon in a concentration higher than 1 part per million, said method comprising forming said carbon doped polycrystalline silicon by heating a mixture of a gaseous silicon compound and a gaseous unsaturated hydrocarbon compound to a temperature above 700° C.
Claim 2
Independent Claim
61 words
A method of manufacturing a semiconductor device having a semiconductor body comprising a circuit element formed of polycrystalline silicon doped with carbon in a concentration higher than 1 part per million, said method comprising forming said carbon doped polycrystalline silicon by heating a mixture of a gaseous silicon compound and a gaseous unsaturated hydrocarbon compound to a temperature above 700° C.
Claim 3
Dependent Claim
15 words
A method as claimed in claim 1, characterized in that the carbon compound is acetylene.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-01-01 | 1993-07-03 | 1994-01-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-01-01 | 1997-07-03 | 1998-01-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-01-01 | 2001-07-03 | 2002-01-02 | $7700.00 | Window Closed / Lapsed |