US4898320A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a high-yield solder bumped semiconductor wafer
Assignee: Samsung Electronics Co Ltd
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Filing: 1988-11-21
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Granted: 1990-02-06
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Expires: 2008-11-21
Abstract
Abstract Disclosed is a method of manufacturing a high-yield solder bumped semiconductor wafer. The method comprises providing a non-solderable transfer substrate having a transfer surface for receipt of solder material; depositing solder material onto the transfer surface to form solder bumps in a predetermined pattern; aligning solderable conductive elements of a semiconductor wafer with the predetermined solder bumps on the transfer surface; and reflowing the patterned solder bumps into wetted contact with the wafer conductive elements.
Inventors
- 👤 Thomas J. Dunaway
- 👤 Richard K. Spielberger
- 👤 Lori A. Dicks
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:29
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/40; H10W70/479; B; B23; B23K; B23K1/00; B23K1/20; H10W70/099; H10W95/00; B23K2101/00; B23K2101/36; B23K2101/40; H05; H05K; H05K3/00; H05K3/30; H05K3/32; H05K3/34; H05K3/3465; H05K3/3478; H10W72/00; H10W72/071; H10W72/0711; H10W72/07173; H10W90/00; H10W90/701; H10W90/731; H10W90/734
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
84 words
A method of manufacturing a high-yield fine pitch geometry solder bumped semiconductor wafer comprising the steps of: (a) providing a nonsolderable transfer substrate having a transfer surface for receipt of solder material; (b) depositing solder material onto the transfer surface to form solder bumps in a predetermined fine pitch geometry pattern; (c) aligning solderable conductive elements of a semiconductor wafer with the patterned solder bumps on the transfer surface; and (d) reflowing the patterned solder bumps into wetted contact with the wafer conductive elements.
Claim 2
Independent Claim
84 words
A method of manufacturing a high-yield fine pitch geometry solder bumped semiconductor wafer comprising the steps of: (a) providing a nonsolderable transfer substrate having a transfer surface for receipt of solder material; (b) depositing solder material onto the transfer surface to form solder bumps in a predetermined fine pitch geometry pattern; (c) aligning solderable conductive elements of a semiconductor wafer with the patterned solder bumps on the transfer surface; and (d) reflowing the patterned solder bumps into wetted contact with the wafer conductive elements.
Claim 3
Dependent Claim
40 words
The method according to claim 1 wherein the depositing step comprises: (a) locating a shadow mask on the transfer surface; and (b) evaporating solder material through apertures in the shadow mask to form solder deposits patterned on the transfer surface.
Claim 4
Dependent Claim
17 words
The method according to claim 1 wherein the transfer substrate comprises a transfer surface which is reusable.
Claim 5
Dependent Claim
26 words
The method according to claim 1 wherein the depositing step comprises plating solder material onto the transfer surface to form solder deposits in a predetermined pattern.
Claim 6
Dependent Claim
46 words
The method according to claim 1 wherein the step of depositing solder material comprises: (a) providing a nonsolderable transfer substrate having a plurality of cavities configured for positioning preformed solder material; and (b) depositing preformed solder pellets into the transfer surface cavities in a predetermined pattern.
Claim 7
Independent Claim
94 words
A method of manufacturing high-yield fine pitch geometry solder bumped semiconductor chips comprising the steps of: (a) providing a nonsolderable transfer substrate having a transfer surface for receipt of solder material; (b) depositing solder material onto the transfer surface to form solder deposits in a predetermined fine pitch geometry pattern; (c) aligning solderable conductive elements of a semiconductor wafer with the patterned solder deposits; (d) reflowing the patterned solder deposits into precise wetted contact with the wafer conductive elements; and (e) separating the solder bumped wafer into a plurality of solder bumped semiconductor chips.
Claim 8
Independent Claim
94 words
A method of manufacturing high-yield fine pitch geometry solder bumped semiconductor chips comprising the steps of: (a) providing a nonsolderable transfer substrate having a transfer surface for receipt of solder material; (b) depositing solder material onto the transfer surface to form solder deposits in a predetermined fine pitch geometry pattern; (c) aligning solderable conductive elements of a semiconductor wafer with the patterned solder deposits; (d) reflowing the patterned solder deposits into precise wetted contact with the wafer conductive elements; and (e) separating the solder bumped wafer into a plurality of solder bumped semiconductor chips.
Claim 9
Dependent Claim
40 words
The method according to claim 6 wherein the deposition step comprises: (a) locating a shadow mask on the transfer surface; and (b) evaporating solder material through apertures in the shadow mask to form solder deposits patterned on the transfer surface.
Claim 10
Dependent Claim
17 words
The method according to claim 6 wherein the transfer substrate comprises a transfer surface which is reusable.
Claim 11
Dependent Claim
27 words
The method according to claim 6 wherein the solder depositing step comprises plating solder material onto the transfer surface to form solder deposits in a predetermined pattern.
Claim 12
Dependent Claim
46 words
The method according to claim 6 wherein the step of depositing solder material comprises: (a) providing a nonsolderable transfer substrate having a plurality of cavities configured for positioning preformed solder material; and (b) depositing preformed solder pellets into the transfer surface cavities in a predetermined pattern.
Claim 13
Independent Claim
121 words
A method of manufacturing a high-yield fine pitch geometry solder bumped semiconductor wafer comprising the steps of: (a) providing a nonsolderable and reusable transfer substrate having a transfer surface for receipt of solder material; (b) depositing solder material onto the transfer surface to form solder bumps in a predetermined fine pitch geometry pattern, the depositing comprising the sub-steps of; (i) locating a shadow mask on the transfer surface; and (ii) evaporating solder material through apertures in the shadow mask to form solder deposits patterned on the transfer surface; (c) aligning solderable conductive elements of a semiconductor wafer with the patterned solder bumps on the transfer surface; and (d) reflowing the patterned solder bumps into wetted contact with the wafer conductive elements.
Claim 14
Independent Claim
121 words
A method of manufacturing a high-yield fine pitch geometry solder bumped semiconductor wafer comprising the steps of: (a) providing a nonsolderable and reusable transfer substrate having a transfer surface for receipt of solder material; (b) depositing solder material onto the transfer surface to form solder bumps in a predetermined fine pitch geometry pattern, the depositing comprising the sub-steps of; (i) locating a shadow mask on the transfer surface; and (ii) evaporating solder material through apertures in the shadow mask to form solder deposits patterned on the transfer surface; (c) aligning solderable conductive elements of a semiconductor wafer with the patterned solder bumps on the transfer surface; and (d) reflowing the patterned solder bumps into wetted contact with the wafer conductive elements.
Claim 15
Dependent Claim
24 words
A method according to claim 11 further comprising the step of separating the solder bumped wafer into a plurality of solder bumped semiconductor chips.
Claim 16
Independent Claim
86 words
A method of manufacturing a high-yield fine pitch geometry solder bumped semiconductor wafer comprising the steps of: (a) providing a nonsolderable and reusable transfer substrate having a transfer surface for receipt of solder material; (b) plating solder material onto the transfer surface to form solder bumps in a predetermined fine pitch geometry pattern; (c) aligning solderable conductive elements of a semiconductor wafer with the patterned solder bumps on the transfer surface; and (d) reflowing the patterned solder bumps into wetted contact with the wafer conductive elements.
Claim 17
Independent Claim
86 words
A method of manufacturing a high-yield fine pitch geometry solder bumped semiconductor wafer comprising the steps of: (a) providing a nonsolderable and reusable transfer substrate having a transfer surface for receipt of solder material; (b) plating solder material onto the transfer surface to form solder bumps in a predetermined fine pitch geometry pattern; (c) aligning solderable conductive elements of a semiconductor wafer with the patterned solder bumps on the transfer surface; and (d) reflowing the patterned solder bumps into wetted contact with the wafer conductive elements.
Claim 18
Dependent Claim
24 words
A method according to claim 13 further comprising the step of separating the solder bumped wafer into a plurality of solder bumped semiconductor chips.
Claim 19
Dependent Claim
38 words
The method according to claim 13 wherein the plating step comprises plating solder material onto the transfer surface to form fine pitch geometry solder bumps in a predetermined pattern with pitch spacing of less than about 2 mils.
Claim 20
Independent Claim
85 words
A method of manufacturing a high-yield fine pitch geometry solder bumped semiconductor wafer comprising the steps of: (a) providing a nonsolderable transfer substrate having a plurality of cavities configured for positioning preformed solder material; and (b) depositing preformed solder pellets into the transfer surface cavities in a predetermined fine pitch geometry pattern; (c) aligning solderable conductive elements of a semiconductor wafer with the patterned solder bumps on the transfer surface; and (d) reflowing the patterned solder bumps into wetted contact with the wafer conductive elements.
Claim 21
Independent Claim
85 words
A method of manufacturing a high-yield fine pitch geometry solder bumped semiconductor wafer comprising the steps of: (a) providing a nonsolderable transfer substrate having a plurality of cavities configured for positioning preformed solder material; and (b) depositing preformed solder pellets into the transfer surface cavities in a predetermined fine pitch geometry pattern; (c) aligning solderable conductive elements of a semiconductor wafer with the patterned solder bumps on the transfer surface; and (d) reflowing the patterned solder bumps into wetted contact with the wafer conductive elements.
Claim 22
Dependent Claim
24 words
A method according to claim 15 further comprising the step of separating the solder bumped wafer into a plurality of solder bumped semiconductor chips.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-02-05 | 1993-08-07 | 1994-02-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-02-05 | 1997-08-07 | 1998-02-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-02-05 | 2001-08-07 | 2002-02-06 | $7700.00 | Window Closed / Lapsed |