Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
80 words
An improved planar magnetic film of deposited close packed hexagonal polycrystalline CoPt, said magnetic film comprising: a. a substrate, b. a Cr overlayer deposited on said substrate, and c. a CoPt film deposited on said Cr overlayer, said CoPt film having a thickness of from 3,000 to 10,000 angstroms, wherein throughout said thickness of said CoPt film, the C-axis of said polycrystalline CoPt lies substantially at an angle of 29 degrees with respect to the plane of said CoPt film.
Claim 2
Dependent Claim
80 words
An improved planar magnetic film of deposited close packed hexagonal polycrystalline CoPt, said magnetic film comprising: a. a substrate, b. a Cr overlayer deposited on said substrate, and c. a CoPt film deposited on said Cr overlayer, said CoPt film having a thickness of from 3,000 to 10,000 angstroms, wherein throughout said thickness of said CoPt film, the C-axis of said polycrystalline CoPt lies substantially at an angle of 29 degrees with respect to the plane of said CoPt film.
Claim 3
Dependent Claim
14 words
The magnetic film of claim 1 having a coercivity substantially equal to 2,000 oersteds.
Claim 4
Dependent Claim
22 words
The magnetic film of claim 2 configured as a permanent magnet having a resultant magnetization lying in the plane of said magnet.
Claim 5
Dependent Claim
80 words
An improved planar magnetic film of deposited close packed hexagonal polycrystalline CoPt, said magnetic film comprising: a. a substrate, b. a W overlayer deposited on said substrate, and c. a CoPt film deposited on said W overlayer, said CoPt film having a thickness of from 3,000 to 10,000 angstroms, wherein throughout said thickness of said CoPt film, the C-axis of said polycrystalline CoPt lies substantially at an angle of 29 degrees with respect to the plane of said CoPt film.
Claim 6
Dependent Claim
80 words
An improved planar magnetic film of deposited close packed hexagonal polycrystalline CoPt, said magnetic film comprising: a. a substrate, b. a W overlayer deposited on said substrate, and c. a CoPt film deposited on said W overlayer, said CoPt film having a thickness of from 3,000 to 10,000 angstroms, wherein throughout said thickness of said CoPt film, the C-axis of said polycrystalline CoPt lies substantially at an angle of 29 degrees with respect to the plane of said CoPt film.
Claim 7
Dependent Claim
14 words
The magnetic film of claim 4 having a coercivity substantially equal to 1,600 oersteds.
Claim 8
Dependent Claim
21 words
The magnetic film of claim 5 configured as a permanent magnet having a magnetization lying in the plane of said magnet.
Claim 9
Dependent Claim
69 words
An improved planar magnetic film of deposited close packed hexagonal polycrystalline CoPt, said magnet comprising: a. a substrate, and b. a CoPt film deposited on said substrate, said CoPt film having a thickness of from 3,000 to 10,000 angstroms, wherein throughout said thickness of said CoPt film, the C-axis of said polycrystalline CoPt lies substantially at an angle of 29 degrees relative to the plane of said CoPt film.
Claim 10
Dependent Claim
69 words
An improved planar magnetic film of deposited close packed hexagonal polycrystalline CoPt, said magnet comprising: a. a substrate, and b. a CoPt film deposited on said substrate, said CoPt film having a thickness of from 3,000 to 10,000 angstroms, wherein throughout said thickness of said CoPt film, the C-axis of said polycrystalline CoPt lies substantially at an angle of 29 degrees relative to the plane of said CoPt film.
Claim 11
Dependent Claim
14 words
The magnetic film of claim 7 having a coercivity substantially equal to 1,300 oersteds.
Claim 12
Dependent Claim
21 words
The magnetic film of claim 8 configured as a permanent magnet having a magnetization lying in the plane of said magnet.
Claim 13
Independent Claim
151 words
A method for depositing a magnetic film by use of deposition apparatus containing an inert atmosphere, said method comprising the steps of: a. sputtering an overlayer from a Cr or W target onto a substrate, b. sputtering a polycrystalline CoPt film from a CoPt target onto said overlayer to a thickness of from 3,000 to 10,000 angstroms, and c. thermalizing Co and Pt atoms sputtered from said CoPt target for deposition as said CoPt film by positioning said substrate relative to said CoPt target and setting the pressure of said inert atmosphere, wherein the thermal energies of said atoms are substantially reduced to 3/2 kT where k is Boltzmann's constant and T is substantially equal to room temperature in degrees Kelvin, and whereby the C-axis of said polycrystalline CoPt film lies substantially at an angle of 29 degrees with the plane of said film throughout said thickness of said CoPt film.
Claim 14
Independent Claim
151 words
A method for depositing a magnetic film by use of deposition apparatus containing an inert atmosphere, said method comprising the steps of: a. sputtering an overlayer from a Cr or W target onto a substrate, b. sputtering a polycrystalline CoPt film from a CoPt target onto said overlayer to a thickness of from 3,000 to 10,000 angstroms, and c. thermalizing Co and Pt atoms sputtered from said CoPt target for deposition as said CoPt film by positioning said substrate relative to said CoPt target and setting the pressure of said inert atmosphere, wherein the thermal energies of said atoms are substantially reduced to 3/2 kT where k is Boltzmann's constant and T is substantially equal to room temperature in degrees Kelvin, and whereby the C-axis of said polycrystalline CoPt film lies substantially at an angle of 29 degrees with the plane of said film throughout said thickness of said CoPt film.
Claim 15
Dependent Claim
43 words
The method of claim 10 further comprising the step of magnetizing said magnetic film by means of an external magnetic field to configure said magnetic film as a permanent magnet, whereby the magnetization of said magnet lies in the plane of said magnet.
Claim 16
Independent Claim
142 words
A method for depositing a planar magnetic film by use of deposition apparatus containing an inert atmosphere, said method comprising the steps of: a. sputtering a polycrystalline CoPt film from a CoPt target onto a substrate to a thickness of from 3,000 to 10,000 angstroms, and b. thermalizing Co and Pt atoms sputtered from said target for deposition as said CoPt film by positioning said substrate relative to said CoPt target and setting the pressure of said inert atmosphere, wherein the thermal energies of said atoms are substantially reduced to 3/2 kT where k is Boltzmann's constant and T is substantially equal to room temperature in degrees Kelvin, and whereby the C-axis direction of said polycrystalline CoPt film lies substantially at an angle of 29 degrees with respect to the plane of said CoPt film throughout said thickness of said CoPt film.
Claim 17
Independent Claim
142 words
A method for depositing a planar magnetic film by use of deposition apparatus containing an inert atmosphere, said method comprising the steps of: a. sputtering a polycrystalline CoPt film from a CoPt target onto a substrate to a thickness of from 3,000 to 10,000 angstroms, and b. thermalizing Co and Pt atoms sputtered from said target for deposition as said CoPt film by positioning said substrate relative to said CoPt target and setting the pressure of said inert atmosphere, wherein the thermal energies of said atoms are substantially reduced to 3/2 kT where k is Boltzmann's constant and T is substantially equal to room temperature in degrees Kelvin, and whereby the C-axis direction of said polycrystalline CoPt film lies substantially at an angle of 29 degrees with respect to the plane of said CoPt film throughout said thickness of said CoPt film.
Claim 18
Dependent Claim
41 words
The method of claim 12 further comprising the step of magnetizing said film by means of an external magnetic field to configure said film as a permanent magnet, whereby the magnetization of said magnet lies in the plane of said magnet.