US4906593A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing a contact plug
Assignee: Fujitsu Ltd
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Filing: 1988-03-04
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Granted: 1990-03-06
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Expires: 2008-03-04
Abstract
Abstract A method of producing a semiconductor device comprising the steps of: forming a window or contact hole in an insulating layer to expose a portion of a semiconductor substrate or a lower conductor line; forming semiconductor material (silicon) in the window; substituting the material with a metal (tungsten) by reaction of the semiconductor material with a metal compound (WF 6 gas); and forming a conductor line over the metal within the window.
Inventors
- 👤 Yoshimi Shioya
- 👤 Yuji Furumura
- 👤 Yasushi Ohyama
- 👤 Shin-ichi Inoue
- 👤 Tsutomu Ogawa
- 👤 Kiyoshi Watanabe
- 👤 Hiroshi Goto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 09:26
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10D; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/60; H10D64/62; H10W20/056; H10W20/057; Y; Y10; Y10S; Y10S148/00; Y10S148/02; Y10S148/026
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
129 words
A method for preparing a semiconductor device comprising: providing a semiconductor device having a conducting portion; forming an insulating layer on said device in covering relationship to said conducting portion; forming a contact hole in said insulating layer to expose said conducting portion; filling said contact hole with a silicon material; contacting the silicon material in the contact hole with a metal compound capable of reacting with silicon to form a metal, said metal thereby depositing in said hole to fill the latter and provide an electrical connection through said insulating layer for the conducting portion; and forming a line of conducting material on said insulating layer and on the metal deposited in the hole, said metal in the hole thereby electrically interconnecting the line and the conducting portion.
Claim 2
Independent Claim
129 words
A method for preparing a semiconductor device comprising: providing a semiconductor device having a conducting portion; forming an insulating layer on said device in covering relationship to said conducting portion; forming a contact hole in said insulating layer to expose said conducting portion; filling said contact hole with a silicon material; contacting the silicon material in the contact hole with a metal compound capable of reacting with silicon to form a metal, said metal thereby depositing in said hole to fill the latter and provide an electrical connection through said insulating layer for the conducting portion; and forming a line of conducting material on said insulating layer and on the metal deposited in the hole, said metal in the hole thereby electrically interconnecting the line and the conducting portion.
Claim 3
Dependent Claim
21 words
A method as set forth in claim 1, wherein said metal compound comprises tungsten hexafluoride gas whereby said metal comprises tungsten.
Claim 4
Dependent Claim
27 words
A method as set forth in claim 2, wherein said contacting is caused to occur at a temperature in the range of 300° C. to 350° C.
Claim 5
Dependent Claim
21 words
A method as set forth in claim 1, wherein said contact hole is formed to have a diameter of about 1.5μ.
Claim 6
Dependent Claim
19 words
A method as set forth in claim 1, wherein said insulating layer is formed from a material comprising PSG.
Claim 7
Dependent Claim
21 words
A method as set forth in claim 5, wherein said contact hole is formed to have a diameter of about 1.5μ.
Claim 8
Dependent Claim
21 words
A method as set forth in claim 1, wherein said insulating layer is formed to have a thickness of about 1μ.
Claim 9
Dependent Claim
21 words
A method as set forth in claim 7, wherein said contact hole is formed to have a diameter of about 1.5μ.
Claim 10
Dependent Claim
19 words
A method as set forth in claim 8, wherein said insulating layer is formed from a material comprising PSG.
Claim 11
Dependent Claim
24 words
A method as set forth in claim 1, wherein the metal filling the contact hole and the insulating layer present a substantially flat surface.
Claim 12
Dependent Claim
20 words
A method as set forth in claim 1, wherein said metal compound comprises molybdenum tetrafluoride whereby said metal comprises molybdenum.
References Cited (Backward Citations)
US3717514A
Cited
US4378383A
Cited
US4343676A
Cited
EP0068897A2
Cited
US4392298A
Cited
US4517225A
Cited
US4540607A
Cited
US4532702A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-03-05 | 1993-09-04 | 1994-03-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-03-05 | 1997-09-04 | 1998-03-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-03-05 | 2001-09-04 | 2002-03-06 | $7700.00 | Window Closed / Lapsed |