Semiconductor device having silicon oxynitride film with improved moisture resistance

Claim 1

A semiconductor device comprising: a semiconductor substrate having a plurality of circuit regions therein, an insulating film covering the surface of said semiconductor substrate, an aluminum wiring layer having a width of 2 μm or less, said aluminum wiring layer being formed on said insulating film, and a silicon oxynitride film covering said metal wiring layer, said silicon oxynitride film containing silicon oxynitride material consisting essentially of silicon oxynitride represented by the formula Si x N y O z and hydrogen, wherein x, y and z represent a set of atomic ratios and x+y+z=1.00, said set of atomic ratios falling within the area A-B-C-D-E-F-G-H of FIG. 2 of the drawings or on the lines connecting the vertices of said area and said sets of atomic ratios of the vertices of said area being as follows: A (x=0.51, y=0.28, z=0.21) B (x=0.47, y=0.28, z=0.25) C (x=0.44, y=0.31, z=0.25) D (x=0.41, y=0.36, z=0.23) E (x=0.41, y=0.39, z=0.20) F (x=0.44, y=0.38, z=0.18) G (x=0.46, y=0.37, z=0.17) H (x=0.51, y=0.32, z=0.17), and a content of hydrogen is 5 to 18 atomic percent of said Si x N y O z .