US4933298A
Expired / Lapsed
US
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Method of making high speed semiconductor device having a silicon-on-insulator structure
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1988-12-19
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Granted: 1990-06-12
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Expires: 2008-12-19
Abstract
Abstract A CMOS silicon-on-insulation structure is fabricated by first forming an insulating SiO 2 layer on a silicon substrate having a (110) plane. Openings are then formed in the SiO 2 layer to expose a part of the substrate, and a polycrystalline or an amorphous silicon layer is deposited on the SiO 2 layer and in the openings. The deposited silicon layer is divided into islands so that a first island includes one of the openings and a second island does not include any openings. A laser beam is then irradiated onto the islands so as to melt the islands, and when the laser light irradiation is discontinued, the melted islands recrystallize so that the first island forms a (110) plane and the second island forms a (100) plane. A p-channel MOSFET is fabricated on the first island, and an n-channel MOSFET is fabricated on the second island. The thus paired CMOS operates at high speeds, because the p-channel MOSFET using positive holes as the carrier is fast in a (110) crystal, and the n-channel MOSFET using electrons as the carrier is fast in a (100) crystal.
Inventors
- 👤 Mitsuhiko Hasegawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 23:34
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0167; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1912; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D86/00; H10D86/01; H10D87/00; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3458; H10P14/3466; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3814; H10P14/382; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S438/00; Y10S438/982
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
131 words
A method of fabricating a semiconductor device, comprising the steps of: (a) forming an insulating layer on a silicon substrate having a (110) surface plane; (b) forming an opening in the insulating layer so as to expose a part of the substrate; (c) depositing a silicon layer on the insulating layer and the exposed part of the substrate; (d) dividing the deposited silicon layer into first and second islands, the first island contacting the substrate through the opening and the second island being isolated from the substrate; (e) recrystallizing the first island to form a (110) plane and the second island to form a (100) plane; (f) forming a p-channel field effect transistor on the recrystallized first island; and (g) forming an n-channel field effect transistor on the recrystallized second island.
Claim 2
Independent Claim
131 words
A method of fabricating a semiconductor device, comprising the steps of: (a) forming an insulating layer on a silicon substrate having a (110) surface plane; (b) forming an opening in the insulating layer so as to expose a part of the substrate; (c) depositing a silicon layer on the insulating layer and the exposed part of the substrate; (d) dividing the deposited silicon layer into first and second islands, the first island contacting the substrate through the opening and the second island being isolated from the substrate; (e) recrystallizing the first island to form a (110) plane and the second island to form a (100) plane; (f) forming a p-channel field effect transistor on the recrystallized first island; and (g) forming an n-channel field effect transistor on the recrystallized second island.
Claim 3
Dependent Claim
19 words
A method of fabricating a semiconductor device according to claim 1, wherein said step (c) comprises depositing amorphous silicon.
Claim 4
Dependent Claim
19 words
A method of fabricating a semiconductor device according to claim 1, wherein said step (c) comprises depositing polycrystalline silicon.
Claim 5
Dependent Claim
58 words
A method of fabricating a semiconductor device according to claim 1, wherein said step (e) comprises the substeps of: (i) irradiating a light beam onto the plurality of islands so as to melt the islands; and (ii) discontinuing the irradiating of the light beam onto the islands so as to allow the melted islands to cool and recrystallize.
Claim 6
Dependent Claim
38 words
A method of fabricating a semiconductor device according to claim 1, further comprising, after said step (d), the step of: (h) depositing a cap layer on the first and second islands to reduce reflection of light irradiated thereon.
Claim 7
Dependent Claim
26 words
A method of fabricating a semiconductor device according to claim 5, wherein said step (h) comprises depositing a silicon dioxide layer and a silicon nitride layer.
Claim 8
Dependent Claim
37 words
A method of fabricating a semiconductor device according to claim 1, further comprising, after said step (e), the step of: (i) selectively removing a portion of the first island, the portion including the silicon above the opening.
Claim 9
Independent Claim
120 words
A method of fabricating a semiconductor device, comprising the steps of: (a) forming an insulating layer on a silicon substrate having a (110) surface plane; (b) forming openings in the insulating layer to expose portions of the substrate therethrough; (c) depositing a silicon layer on the insulating layer and the exposed portions of the substrate; (d) dividing the deposited silicon layer into a plurality of first islands which include at least one of the openings and a plurality of second islands which include none of the openings; (e) melting and recrystallizing the first and second islands; (f) forming a p-channel field effect transistor on the recrystallized first islands; and (g) forming n-channel field effect transistors on the recrystallized second islands.
Claim 10
Independent Claim
120 words
A method of fabricating a semiconductor device, comprising the steps of: (a) forming an insulating layer on a silicon substrate having a (110) surface plane; (b) forming openings in the insulating layer to expose portions of the substrate therethrough; (c) depositing a silicon layer on the insulating layer and the exposed portions of the substrate; (d) dividing the deposited silicon layer into a plurality of first islands which include at least one of the openings and a plurality of second islands which include none of the openings; (e) melting and recrystallizing the first and second islands; (f) forming a p-channel field effect transistor on the recrystallized first islands; and (g) forming n-channel field effect transistors on the recrystallized second islands.
Claim 11
Dependent Claim
67 words
A method of fabricating a semiconductor device according to claim 8, wherein said step (e) comprises the substeps of: (i) heating the substrate; (ii) irradiating the islands with a laser beam; and (iii) cooling the islands so that each of the first islands recrystallize into a single crystal having a (110) plane, and each of the second islands recrystallize into a single crystal having a (110) plane.
Claim 12
Dependent Claim
38 words
A method of fabricating a semiconductor device according to claim 8, further comprising, after said step (d), the step of: (h) depositing a cap layer on the first and second islands to reduce reflection of the laser beams.
Claim 13
Dependent Claim
25 words
A method of fabricating a semiconductor device according to claim 10, wherein the cap layer includes a silicon dioxide layer and a silicon nitride layer.
Claim 14
Independent Claim
124 words
A method of fabricating a semiconductor device, comprising the steps of: (a) forming an insulating layer on a silicon substrate having first surface plane indices; (b) forming an opening in the insulating layer so as (c) forming first and second silicon islands on the insulating layer, the first island being connected to the substrate through the opening and the second layer being isolated from the substrate; (d) recrystallizing the first island to form the first surface plane indices therein and the second island to form second surface plane indices therein; (e) forming a first-type field effect transistor on the recrystallized first island; and (f) forming a second-type field effect transistor, opposite in polarity from the first-type field effect transistor, on the recrystallized second island.
Claim 15
Independent Claim
124 words
A method of fabricating a semiconductor device, comprising the steps of: (a) forming an insulating layer on a silicon substrate having first surface plane indices; (b) forming an opening in the insulating layer so as (c) forming first and second silicon islands on the insulating layer, the first island being connected to the substrate through the opening and the second layer being isolated from the substrate; (d) recrystallizing the first island to form the first surface plane indices therein and the second island to form second surface plane indices therein; (e) forming a first-type field effect transistor on the recrystallized first island; and (f) forming a second-type field effect transistor, opposite in polarity from the first-type field effect transistor, on the recrystallized second island.
Claim 16
Dependent Claim
23 words
A method of fabricating a semiconductor device according to claim 12, wherein said step (c) further comprises forming the islands from amorphous silicon.
Claim 17
Dependent Claim
23 words
A method of fabricating a semiconductor device according to claim 12, wherein said step (c) further comprises forming the islands from polycrystalline silicon.
Claim 18
Dependent Claim
31 words
A method of fabricating a semiconductor device according to claim 12, further comprising, after said step (c), the step of: (g) depositing a cap layer on the first and second islands.
Claim 19
Dependent Claim
58 words
A method of fabricating a semiconductor device according to claim 15, wherein said step (d) comprises the substeps of: (i) irradiating a light beam onto the cap layer so as to melt the islands; and (ii) discontinuing the irradiating of the light beam onto the cap layer so as to allow the melted islands to cool and recrystallize.
Claim 20
Dependent Claim
26 words
A method of fabricating a semiconductor device according to claim 15, wherein said step (g) comprises depositing a silicon dioxide layer and a silicon nitride layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-06-11 | 1993-12-11 | 1994-06-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-06-11 | 1997-12-11 | 1998-06-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-06-11 | 2001-12-11 | 2002-06-12 | $7700.00 | Window Closed / Lapsed |