US4942152A
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Process for preparting a bismuth-type compound oxide superconductor
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1989-08-30
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Granted: 1990-07-17
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Expires: 2009-08-30
Abstract
Abstract A novel process for preparing superconductor of bismuth-containing compound oxide such as Bi--Sr--Ca--Cu system. In the present invention, firstly an intermediate compound oxide containing metal elements of the superconductor except bismuth is prepared and then the intermediate compound oxide is contacted with bismuth oxide vapour at a temperature between 750° and 950° C. so that bismuth oxide is reacted with said intermediate compound oxide.
Inventors
- 👤 Hideo Itozaki
- 👤 Keizo Harada
- 👤 Shuji Yazu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 18:57
CPC Classifications
C; C04; C04B; C04B35/00; C04B35/01; C04B35/45; C04B35/4521; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/087; H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0381; Y; Y10; Y10S; Y10S505/00; Y10S505/725; Y10S505/73; Y10S505/731; Y10S505/775; Y10S505/776; Y10S505/782; Y10S505/784
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
71 words
A process for preparing a superconductor of a bismuth-containing compound oxide, characterized by the steps comprising preparing an intermediate compound oxide composed of metal elements which are constituent elements of said superconductor except bismuth, and subjecting said intermediate compound oxide to heat-treatment at a temperature between 750° and 950° C. in an atmosphere containing bismuth oxide vapour so that bismuth oxide reacts with said intermediate compound oxide to produce the superconductor.
Claim 2
Dependent Claim
71 words
A process for preparing a superconductor of a bismuth-containing compound oxide, characterized by the steps comprising preparing an intermediate compound oxide composed of metal elements which are constituent elements of said superconductor except bismuth, and subjecting said intermediate compound oxide to heat-treatment at a temperature between 750° and 950° C. in an atmosphere containing bismuth oxide vapour so that bismuth oxide reacts with said intermediate compound oxide to produce the superconductor.
Claim 3
Dependent Claim
22 words
The process set forth in claim 1 wherein said bismuth oxide vapour is created by heating bismuth oxide powder in a chamber.
Claim 4
Dependent Claim
22 words
The process set forth in claim 1 wherein said superconductor is in a form of a thin film deposited on a substrate.
Claim 5
Dependent Claim
28 words
The process set forth in claim 1 wherein said intermediate compound oxide has a form of a thin film prepared on a substrate by physical vapour deposition technique.
Claim 6
Dependent Claim
25 words
The process set forth in claim 4 wherein the substrate is a single crystal of MgO, SrTiO 3 , LaAl0 3 or LaGaO 3 .
Claim 7
Dependent Claim
22 words
The process set forth in claim 5 wherein the thin film is deposited on {100} plane or {100} plane of the substrate.
Claim 8
Dependent Claim
15 words
The process set forth in claim 4 wherein said physical vapour deposition technique is sputtering.
Claim 9
Dependent Claim
37 words
The process set forth in claim 7 wherein a target used in the sputtering is a sintered block or sintered powder of a compound oxide containing metal elements which are constituent elements of said intermediate compound oxide.
Claim 10
Dependent Claim
66 words
The process set forth in claim 8 wherein said sintered block or sintered powder is prepared by mixing powders of oxides, carbonates, nitrates or fluorides, each containing at least one of constituent metal elements of said intermediate compound oxide in such a manner that the resulting powder mixture contains the constituent metal elements except bismuth in predetermined atomic ratios and then by sintering the powder mixture.
Claim 11
Dependent Claim
27 words
The process set forth in claim 7 wherein said thin film is prepared by heating the substrate at a temperature lower than 800° C. during the sputtering.
Claim 12
Dependent Claim
24 words
The process set forth in claim 1 wherein the superconducting thin film is made of a compound oxide of Bi, Sr, Ca and Cu.
Claim 13
Dependent Claim
47 words
The process set forth in claim 11 wherein the compound oxide consists mainly of compound oxides represented by the general formula: Bi.sub.4 (Sr.sub.1-x, Ca.sub.x).sub.m Cu.sub.n O.sub.p+y in which "m", "n", "x" and "y" are numbers each satisfying respective ranges of 6≦m≦16, 4≦n≦12, 0.2<x<0.8 and -2≦y≦+2 and p=2(6+m+n).
Claim 14
Dependent Claim
22 words
The process set forth in claim 12 wherein said superconductor is in a form of a thin film deposited on a substrate.
Claim 15
Dependent Claim
28 words
The process set forth in claim 12 wherein said intermediate compound oxide has a form of a thin film prepared on the substrate by physical vapour deposition technique.
Claim 16
Dependent Claim
25 words
The process set forth in claim 14 wherein the substrate is a single crystal of MgO, SrTiO 3 , LaAlO 3 or LaGaO 3 .
Claim 17
Dependent Claim
22 words
The process set forth in claim 15 wherein the thin film is deposited on {100} plane or {110} plane of the substrate.
Claim 18
Dependent Claim
15 words
The process set forth in claim 14 wherein said physical vapour deposition technique is sputtering.
Claim 19
Dependent Claim
37 words
The process set forth in claim 17 wherein a target used in the sputtering is a sintered block or sintered powder of a compound oxide containing metal elements which are constituent elements of said intermediate compound oxide.
Claim 20
Dependent Claim
66 words
The process set forth in claim 18 wherein said sintered block or sintered powder is prepared by mixing powders of oxides, carbonates, nitrates, or fluorides, each containing at least one of constituent metal elements of said intermediate compound oxide in such a manner that the resulting powder mixture contains the constituent metal elements except bismuth in predetermined atomic ratios and then by sintering the powder mixture.
Claim 21
Dependent Claim
27 words
The process set forth in claim 17 wherein said thin film is prepared by heating the substrate at a temperature lower than 800° C. during the sputtering.
References Cited (Backward Citations)
No citation records indexed.
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| 3.5 Years (Year 4) | 1993-07-16 | 1994-01-15 | 1994-07-17 | $2000.00 | Window Closed / Lapsed |
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